The human brain receives perceptual information through sensory organs for cognitive processing [
1,
5]. For light signals, human beings own cone cells to detect and recognize information from different wavelengths of visible light, and then perform information preprocess before continuing to transmit information to the visual cortex of the brain (Figure
1(a)). Synapse is the functional link between two neurons [
31,
32]. The release of neurotransmitters from the presynaptic neuron is triggered upon the arrival of light stimuli. These neurotransmitters are eventually received by appropriate receptors in the postsynaptic membrane, triggering a postsynaptic potential [
33]. Thus, the postsynaptic current (PSC) is ultimately generated, which is utilized to assess the connection strength of the synapse. To simulate the functions of human retinas, optoelectronic synaptic transistors based on PQT-12/Ir(ppy)
3 organic heterojunction were constructed (Figure
1(b)). The fabrication of our synaptic transistors is introduced in detail in the Materials and Methods. Figure S1 shows the cross-sectional scanning electron microscope (SEM) of the as-fabricated optoelectronic synaptic transistors. The light stimuli and the channel layer of the synaptic transistors were served as the presynaptic and postsynaptic membrane, respectively. The PQT-12/Ir(ppy)
3 organic heterojunction was sensitive to light, therefore, laying the foundation for modulating the conductivity of the channel. PQT-12 was responsible for the carrier transport, which exhibited high photoresponse to visible light [
15]. Ir(ppy)
3 that attracted tremendous interest in OLED owing to its high efficiency of electrophosphorescence was used to form the heterojunction structure and served as the electron-trapping layer [
34,
35]. The surface morphology of Ir(ppy)
3 film and PQT-12 on Ir(ppy)
3 film was investigated through atomic force microscopy (AFM), as shown in Figure
1(c) and Figure S2. The root mean square roughness (RMS) of Ir(ppy)
3 film and PQT-12 on Ir(ppy)
3 film was found to be 0.35 and 1.33 nm, respectively, and the roughness at different positions was pretty low, which confirmed the inappreciable device-to-device variation and the uniformity of our subsequent synaptic arrays. The typical output characteristics of the synaptic transistors were measured in the dark condition, as depicted in Figure S3, and decent organic transistor performance was exhibited. Once the optoelectronic synaptic transistor was upon the irradiation of light, the positive shift of the transfer curve could be observed, and as the exposure time extended, the positive displacement of the transfer curve was also increased (Figure
1(d)). Positive shift tended to be saturated when the irradiation time exceeded a certain time. After the optoelectronic synaptic transistor was illuminated for 60 s, the light source was removed, leading to the negative shift of the transfer curve. Even when the light was off for 200 s, compared to the original dark condition, a certain positive shift was still demonstrated on the transfer curve (Figure
1(e)). Figure
1(f) illustrates the transfer characteristics curves under different illumination intensities. Although the illumination intensity was low to 0.015 mW cm
-2, the optoelectronic synapse could still detect it, confirming the high photoresponsivity of PQT-12/Ir(ppy)
3 heterojunction. It should be noted that during the storage process and before the testing process, the device would inevitably be illuminated. Thus, the photogenerated electrons could retain in Ir(ppy)
3 and the interface of the heterojunction, which resulted in the slightly positive shift of the transfer curve under the original dark condition.