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Effect of sputtering time and RF power on the properties of CdS thin films prepared by annealing Cd/CdS precursors
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Junwei Zhaoa, b, Rengang Zhanga, *, Tuantuan Wanga, Peilun Lia, b, Huihui Zhoua, Hongyu Liua, Peng Zhangb, **, Runsheng Yub, Xingzhong Caob
Progress in Natural Science: Materials International | 2026, 36(1) : 143 - 151
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Progress in Natural Science: Materials International | 2026, 36(1): 143-151
• Research Article •
Effect of sputtering time and RF power on the properties of CdS thin films prepared by annealing Cd/CdS precursors
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Junwei Zhaoa, b, Rengang Zhanga, *, Tuantuan Wanga, Peilun Lia, b, Huihui Zhoua, Hongyu Liua, Peng Zhangb, **, Runsheng Yub, Xingzhong Caob
Affiliations
  • aCollege of Science, Wuhan University of Science and Technology, Wuhan, 430065, PR China
  • bInstitution of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, PR China
Published: 2026-02-22 doi: 10.1016/j.pnsc.2026.01.002
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CdS thin films were fabricated by annealing precursors which were deposited using the method of Sputtering, Evaporation and Sputtering (SES). Effect of sputtering time and RF power on the structural, compositional, surface morphology and optical properties of CdS thin films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion spectrometer (EDS), UV-Vis spectrophotometer and photoluminescence (PL). The results reveal that the properties and growth of the obtained CdS films are greatly influenced by the second sputtering time rather than the first sputtering time. The deposited precursors are substrate/Cd/CdS, and transformed to CdS after annealing. The CdS films are hexagonal structure with a preferred orientation along (002) plane. Besides, the dense CdS films without cracks or pinholes have S/Cd atomic ratios of 0.87-0.99. Additionally, the grain size, morphology and composition of CdS films change with increasing RF power from 80 W to 150 W. All CdS films have a high average transmittance and band gaps of 2.25-2.43 eV. The PL emission peaks at 530 nm for CdS thin films are possibly caused by the band edge emission while the PL emission peaks at 680 nm arise from sulfur vacancies.

CdS thin films  /  Sputtering  /  Cd/CdS precursors  /  Annealing  /  Optical properties
Junwei Zhao, Rengang Zhang, Tuantuan Wang, Peilun Li, Huihui Zhou, Hongyu Liu, Peng Zhang, Runsheng Yu, Xingzhong Cao. Effect of sputtering time and RF power on the properties of CdS thin films prepared by annealing Cd/CdS precursors[J]. Progress in Natural Science: Materials International, 2026 , 36 (1) : 143 -151 . DOI: 10.1016/j.pnsc.2026.01.002
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  • National Natural Science Foundation of China(11975173)
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Year 2026 volume 36 Issue 1
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Article Info
doi: 10.1016/j.pnsc.2026.01.002
  • Receive Date：2025-09-19
  • Online Date：2026-06-03
  • Published：2026-02-22
Article Data
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History
  • Received：2025-09-19
  • Revised：2025-12-30
  • Accepted：2026-01-03
Funding
National Natural Science Foundation of China(11975173)
Affiliations
    aCollege of Science, Wuhan University of Science and Technology, Wuhan, 430065, PR China
    bInstitution of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, PR China

Corresponding:

* E-mail addresses: (R. Zhang)
** E-mail addresses: (P. Zhang).
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https://castjournals.cast.org.cn/joweb/pnsmi/EN/10.1016/j.pnsc.2026.01.002
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光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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