ZnO varistors doped by Al2O3 were prepared under different sintering temperatures, and their microstructure and electrical characteristics were studied by scanning electron microscope, X-ray diffraction, current-voltage test, and capacitance-voltage test. The results show that with the increase of sintering temperature, the leakage current of the ZnO varistor doped by Al2O3 was suppressed significantly, this is due to the continuous increase of donor degree and interface state density increases the barrier height of grain boundary. With the increase of sintering temperature, Al3+ will continuously dissolve into the ZnO grains, the grain resistivity would reduce, and the residual voltage ratio of the ZnO varistor when a large current is passed decreases. When the sintering temperature is 1150℃, the electrical properties of the ZnO varistor are the best, the voltage gradient is 418.7 V/mm, the leakage current is 0.74, the residual voltage ratio is 1.68, and the nonlinear coefficient is 67.5, which is contribute to improve the protective performance of ZnO arrester and limit the overvoltage of the power system, especially the UHV system deeply.
| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |