Interfacial discharge between XLPE and SIR in cable joints is one of the main causes of cable failure. In order to improve this phenomenon, the XLPE sample surface was treated by plasma silicon deposition with different time, and the micro-morphology and interface discharge tests were carried out. The results show that the plasma silicon deposition technology can effectively improve the voltage resistance of XLPE/SIR interface. With the increase of plasma silicon deposition treatment time, the surface roughness of XLPE sample decreases at first and then increases, and its change trend is the same as that of the initial discharge voltage, breakdown voltage, and voltage increase amplitude of XLPE/SIR interface, and is opposite to that of the surface resistivity. The XLPE sample after 3 min of plasma silicon deposition has the smallest surface roughness (R a=41.8nm) and the largest surface resistivity (857×1012 Ω). Under this treatment time, the XLPE/SIR interface has the largest actual contact area, the fewest micro-pores, and the largest increase in breakdown voltage. Among them, the breakdown voltage increases by 66.7% compared with the untreated XLPE/SIR interface.
| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |