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Analysis of Magnetic Field Radiation of IGBT Device and Electromagnetic Interference Issues on Gate Driver Circuit in Sub-module of VSC Valves for HVDC
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Yuyao YAN  Student Member, CPSS1, Han PENG  Senior Member, CPSS1, Qiaozhi YUE  Student Member, CPSS1, Manbo WANG1, Jiancheng BAI  Member, CPSS3, Qiaoling TONG2
Journal of Power Supply | 2026, 24(8) : 306 - 318
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Journal of Power Supply | 2026, 24(8): 306-318
• EMI/EMC •
Analysis of Magnetic Field Radiation of IGBT Device and Electromagnetic Interference Issues on Gate Driver Circuit in Sub-module of VSC Valves for HVDC
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Yuyao YAN  Student Member, CPSS1, Han PENG  Senior Member, CPSS1, Qiaozhi YUE  Student Member, CPSS1, Manbo WANG1, Jiancheng BAI  Member, CPSS3, Qiaoling TONG2
Affiliations
  • 1.State Key Laboratory of Advanced Electromagnetic Technology (School of Electrical and Electronic Engineering, Huazhong University of Science and Technology), Wuhan 430074, China
  • 2.School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan 430074, China
  • 3.China Electric Power Research Institute, Beijing 102209, China
Published: 2026-08-30 doi: 10.13234/j.issn.2095-2805.2026.8.306
Outline
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The modular multilevel converter (MMC) is a core component in the voltage sourced converter based high-voltage direct-current transmission, and its safe and reliable operation is crucial for ensuring the security of power supply. Insulated gate bipolar transistor (IGBT) devices in converter valves will produce significant electromagnetic interference (EMI) due to the high du/dt and di/dt, which can easily affect the normal operation of low-voltage control circuits and even lead to system failures. The gate driver circuit is directly connected with the highvoltage and large-current IGBT, and it supplies switch control signals to the system. Therefore, it is the most susceptible unit in low-voltage control circuits. The electromagnetic radiation from IGBT devices and the EMI issues within the gate drive voltage are investigated. First, it is clarified that the distance between the driver circuit and the power module is much less than the wavelength of electromagnetic waves generated by IGBT switching, thus focusing on the near-field radiation issues. With the consideration of the complex layout and wiring on the gate driver circuit and the presence of localized copper plating, it is revealed for the first time that the electromagnetic radiation sources on the gate driver circuit are composed of electromagnetic sources generated by the switching of IGBT devices and the electromagnetic scattering sources caused by copper plating on the gate driver circuit, which exhibit characteristics of multi-source interaction. Then, an actual converter valve sub-module was taken as a research object, and experiments were conducted under various switching conditions to fully and accurately determine the spatial magnetic field distribution characteristics of the converter valve sub-module in terms of location, frequency and intensity. In addition, the electromagnetic scattering characteristics on the gate driver circuit and the induced voltage at the driver signal port under the combined effects of electromagnetic scattering and radiation were also verified.

Voltage sourced converter based high-voltage direct-current transmission  /  modular multilevel converter (MMC)  /  electromagnetic radiation  /  gate driver circuit  /  electromagnetic scattering  /  induced voltage
闫玉瑶中国电源学会学生会员, 彭晗中国电源学会高级会员, 岳乔治中国电源学会学生会员, 王曼博, 白建成中国电源学会会员, 童乔凌. 柔直换流阀子模块中IGBT器件的磁场辐射特性与驱动电路的电磁问题分析. 电源学报, 2026 , 24 (8) : 306 -318 . DOI: 10.13234/j.issn.2095-2805.2026.8.306
Yuyao YAN, Han PENG, Qiaozhi YUE, Manbo WANG, Jiancheng BAI, Qiaoling TONG. Analysis of Magnetic Field Radiation of IGBT Device and Electromagnetic Interference Issues on Gate Driver Circuit in Sub-module of VSC Valves for HVDC[J]. Journal of Power Supply, 2026 , 24 (8) : 306 -318 . DOI: 10.13234/j.issn.2095-2805.2026.8.306
  • National Key R&D Program of China(2021YFB2401600)
  • Delta Power Electronics Science and Education Development Program of Delta Group
Year 2026 volume 24 Issue 8
39
5
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Article Info
doi: 10.13234/j.issn.2095-2805.2026.8.306
  • Receive Date:2024-08-12
  • Online Date:2026-10-29
  • Published:2026-08-30
Article Data
Affiliations
History
  • Received:2024-08-12
  • Revised:2024-11-18
  • Accepted:2024-12-04
Funding
National Key R&D Program of China(2021YFB2401600)
Delta Power Electronics Science and Education Development Program of Delta Group
Affiliations
    1.State Key Laboratory of Advanced Electromagnetic Technology (School of Electrical and Electronic Engineering, Huazhong University of Science and Technology), Wuhan 430074, China
    2.School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan 430074, China
    3.China Electric Power Research Institute, Beijing 102209, China
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表12种不同金属材料的力学参数
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小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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