Full
Outline
A gallium nitride high electron mobility transistor (GaN HEMT) is widely used in switching power supply design because of its superiority over silicon devices in terms of switching speed, switching loss, and power conversion. Due to the high di/dt and du/dt of GaN HEMT in the switching process, the gate-source of the device in the bridge circuit is easily affected by the parasitic parameters to generate excessive voltage oscillation, which will seriously affect the safety and reliability of the system. To address the above problems, firstly, the bootstrap driver circuit of GaN HEMT is constructed, the mechanism of oscillation is analyzed, and then the RCD circuit based on GaN HEMT is proposed to suppress the negative voltage spike caused by voltage oscillation. Finally, a pulse test circuit is built to experimentally verify the suppression effect of the RCD circuit. Compared with the traditional bootstrap driver circuit, the negative voltage spike after adding the RCD circuit changes from -3.35 V to -1.20 V, and there is no significant delay in the turn-on time of the turn-on process and the turn-off loss process is reduced. The above experimental results verify the effectiveness of the RCD circuit for directional suppression of gate-source oscillation.
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| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |
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