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Research on Performance Improvement of Reverse Blocking IGCT Based on Lifetime Control Technology
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Junjie MA1, Rongdong WANG1, Tiansheng HU1, Lairan WANG1, Jiansheng HU1, Wuhua YANG  Member, CPSS2
Journal of Power Supply | 2026, 24(6) : 11 - 18
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Journal of Power Supply | 2026, 24(6): 11-18
• Power Semiconductor Devices and Drive Circuits •
Research on Performance Improvement of Reverse Blocking IGCT Based on Lifetime Control Technology
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Junjie MA1, Rongdong WANG1, Tiansheng HU1, Lairan WANG1, Jiansheng HU1, Wuhua YANG  Member, CPSS2
Affiliations
  • 1.XJ Electric Co., Ltd., Xuchang 461000, China
  • 2.Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China
Published: 2026-06-30 doi: 10.13234/j.issn.2095-2805.2026.6.11
Outline
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Aimed at the problem that various characteristics cannot be well compromised in the design of reverse blocking integrated gate commutated thyristor (RB-IGCT) devices, based on the research on the effect of electron irradiation on the device performance, a double-sided proton irradiation method is proposed, which is further verified by simulations. Results show that electron irradiation will significantly shorten the overall lifetime of the device, and greatly decreasing the internal carrier concentration in its on-state. Therefore, electron irradiation has a positive effect on the turn-off characteristics of the device at the cost of deteriorating all of its other characteristics. In contrast, double-sided proton irradiation can locally modulate the carrier concentration distribution in the on-state of the device, thus ensuring its on-state characteristics and surge current withstand capability. Meanwhile, this irradiation method reduces the leakage current of the device at high temperature (400 K) by nearly 50%, indicating that it is an effective method for handling the trade-off relationship between various performance parameters of the device.

Reverse blocking-integrated gate commutated thyristor (RB-IGCT)  /  lifetime control  /  electron irradiation  /  proton irradiation
马俊杰, 王蓉东, 胡天生, 王来冉, 胡剑生, 杨武华中国电源学会会员. 基于寿命控制技术的逆阻型IGCT性能提升研究. 电源学报, 2026 , 24 (6) : 11 -18 . DOI: 10.13234/j.issn.2095-2805.2026.6.11
Junjie MA, Rongdong WANG, Tiansheng HU, Lairan WANG, Jiansheng HU, Wuhua YANG. Research on Performance Improvement of Reverse Blocking IGCT Based on Lifetime Control Technology[J]. Journal of Power Supply, 2026 , 24 (6) : 11 -18 . DOI: 10.13234/j.issn.2095-2805.2026.6.11
  • Shaanxi Qinchuangyuan “Scientist + Engineer” Team Construction Project(2023KXJ-189)
Year 2026 volume 24 Issue 6
40
8
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Article Info
doi: 10.13234/j.issn.2095-2805.2026.6.11
  • Receive Date:2025-10-28
  • Online Date:2026-10-29
  • Published:2026-06-30
Article Data
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History
  • Received:2025-10-28
  • Revised:2026-01-04
  • Accepted:2026-01-26
Funding
Shaanxi Qinchuangyuan “Scientist + Engineer” Team Construction Project(2023KXJ-189)
Affiliations
    1.XJ Electric Co., Ltd., Xuchang 461000, China
    2.Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China
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表12种不同金属材料的力学参数
科
Family
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Number of
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Number of
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Number of
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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