Aimed at the problem that various characteristics cannot be well compromised in the design of reverse blocking integrated gate commutated thyristor (RB-IGCT) devices, based on the research on the effect of electron irradiation on the device performance, a double-sided proton irradiation method is proposed, which is further verified by simulations. Results show that electron irradiation will significantly shorten the overall lifetime of the device, and greatly decreasing the internal carrier concentration in its on-state. Therefore, electron irradiation has a positive effect on the turn-off characteristics of the device at the cost of deteriorating all of its other characteristics. In contrast, double-sided proton irradiation can locally modulate the carrier concentration distribution in the on-state of the device, thus ensuring its on-state characteristics and surge current withstand capability. Meanwhile, this irradiation method reduces the leakage current of the device at high temperature (400 K) by nearly 50%, indicating that it is an effective method for handling the trade-off relationship between various performance parameters of the device.
| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |