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Peak Reverse Recovery Current Model for Freewheeling Diode and Its Application in Junction Temperature Prediction
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Qianming JIAO, Lingyu ZHU, Cao ZHAN, Zhanlei LIU, Weicheng WANG, Shengchang JI
Journal of Power Supply | 2025, 23(6) : 329 - 339
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Journal of Power Supply | 2025, 23(6): 329-339
• Power Semiconductor Devices •
Peak Reverse Recovery Current Model for Freewheeling Diode and Its Application in Junction Temperature Prediction
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Qianming JIAO, Lingyu ZHU, Cao ZHAN, Zhanlei LIU, Weicheng WANG, Shengchang JI
Affiliations
  • State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
Published: 2025-10-30 doi: 10.13234/j.issn.2095-2805.2025.6.329
Outline
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The accurate chip junction temperature prediction of power semiconductor modules is significant for their reliable operation. However, the research about freewheeling diode (FWD) chip junction temperature prediction is not sufficient at present, and the models of temperature sensitive electric parameters and the corresponding evaluation mechanism are lacking. A peak reverse recovery current model is deduced based on the turn-off process of FWD, and the relationship of peak reverse recovery current with bus voltage, load current and junction temperature is established. Then, a parameter identification approach for the peak reverse recovery current model is proposed based on the particle swarm optimization algorithm with random mutation, and the result of double-pulse test is used to extract the model parameters and verify the model. To reduce the model error caused by the linear distribution and linear changes of carriers, the exponential terms of load current and bus voltage are further added, thus optimizing the prediction of peak current. Finally, a junction temperature prediction approach for FWD chips in power semiconductor modules is put forward based on the optimized model, and this approach is more accurate compared with the look-up-table method, indicating that it can satisfy the requirements of FWD junction temperature prediction.

Power semiconductor module  /  freewheeling diode (FWD) chip  /  junction temperature prediction  /  reverse recovery current  /  particle swarm optimization algorithm
焦乾明, 祝令瑜, 占草, 刘占磊, 王伟丞, 汲胜昌. 续流二极管反向恢复电流峰值模型及其在结温预测中的应用研究. 电源学报, 2025 , 23 (6) : 329 -339 . DOI: 10.13234/j.issn.2095-2805.2025.6.329
Qianming JIAO, Lingyu ZHU, Cao ZHAN, Zhanlei LIU, Weicheng WANG, Shengchang JI. Peak Reverse Recovery Current Model for Freewheeling Diode and Its Application in Junction Temperature Prediction[J]. Journal of Power Supply, 2025 , 23 (6) : 329 -339 . DOI: 10.13234/j.issn.2095-2805.2025.6.329
  • National Natural Science Foundation of China(51877168)
Year 2025 volume 23 Issue 6
53
5
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Article Info
doi: 10.13234/j.issn.2095-2805.2025.6.329
  • Receive Date:2022-09-15
  • Online Date:2026-10-26
  • Published:2025-10-30
Article Data
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History
  • Received:2022-09-15
  • Revised:2023-03-17
  • Accepted:2023-03-31
Funding
National Natural Science Foundation of China(51877168)
Affiliations
    State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
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表12种不同金属材料的力学参数
科
Family
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Number of
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Number of
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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