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Design of High Power Density SiC Power Module with Large Chips
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Dongrun LI1, 2, Puqi NING1, 2, Yuhui KANG1, Tao FAN1, 2, Guangyin LEI3, 4, Wenhua SHI3, 5
Journal of Power Supply | 2024, 22(3) : 93 - 99
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Journal of Power Supply | 2024, 22(3): 93-99
• Packaging Design and Optimization •
Design of High Power Density SiC Power Module with Large Chips
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Dongrun LI1, 2, Puqi NING1, 2, Yuhui KANG1, Tao FAN1, 2, Guangyin LEI3, 4, Wenhua SHI3, 5
Affiliations
  • 1 Institute of Electrical Engineering, Chinese Academy of Sciences Beijing 100190 China
  • 2 University of Chinese Academy of Sciences Beijing 100049 China
  • 3 Institute of Future Lighting, Academy for Engineering & Technology, Fudan University Shanghai 200433 China
  • 4 Research Institute of Fudan University in Ningbo Ningbo 315327 China
  • 5 SiChain Semiconductors Ningbo 315226 China
Published: 2024-05-30 doi: 10.13234/j.issn.2095-2805.2024.3.93
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Silicon carbide (SiC) devices possess advantages such as high voltage resistance, low losses and high thermal conductivity, making them of significant importance for the development of the electric vehicle industry. A design for a SiC MOSFET power module utilizing large-chip packaging was proposed, and experiments were conducted to analyze the module's electrical performance. Simulations were set up to compare the module temperature under two conditions, i.e., electrical characteristics only and a combination of electrical characteristics and temperature feedback. Simulation results indicate that under identical operating conditions, the SiC MOSFET power module designed with large-chip packaging exhibited stronger conduction current capability, smaller temperature variations and improved electrical performance.

Electric vehicle  /  power density  /  silicon carbide (SiC) chip  /  power module  /  packaging
Dongrun LI, Puqi NING, Yuhui KANG, Tao FAN, Guangyin LEI, Wenhua SHI. Design of High Power Density SiC Power Module with Large Chips[J]. Journal of Power Supply, 2024 , 22 (3) : 93 -99 . DOI: 10.13234/j.issn.2095-2805.2024.3.93
Funding
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  • National Key Research and Development Program of China(2021YFB2500600)
  • CAS Youth Multi-discipline Project(JCTD-2021-09)
Appendix
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Year 2024 volume 22 Issue 3
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329
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Article Info
doi: 10.13234/j.issn.2095-2805.2024.3.93
  • Receive Date：2024-02-06
  • Online Date：2025-07-21
  • Published：2024-05-30
Article Data
Affiliations
History
  • Received：2024-02-06
  • Revised：2024-02-19
  • Accepted：2024-02-20
Funding
National Key Research and Development Program of China(2021YFB2500600)
CAS Youth Multi-discipline Project(JCTD-2021-09)
Affiliations
    1 Institute of Electrical Engineering, Chinese Academy of Sciences Beijing 100190 China
    2 University of Chinese Academy of Sciences Beijing 100049 China
    3 Institute of Future Lighting, Academy for Engineering & Technology, Fudan University Shanghai 200433 China
    4 Research Institute of Fudan University in Ningbo Ningbo 315327 China
    5 SiChain Semiconductors Ningbo 315226 China
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https://castjournals.cast.org.cn/joweb/dyxb/EN/10.13234/j.issn.2095-2805.2024.3.93
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光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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