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Online Monitoring Method for SiC MOSFET Gate-oxide Health Status Based on Gate Reference Voltage
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Shengxu YU1, Zhiqiang WANG1, Guoqing XIN1, Xiaojie SHI1, Lingqi TAN2, Kai MA2
Journal of Power Supply | 2024, 22(3) : 248 - 257
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Journal of Power Supply | 2024, 22(3): 248-257
On-line Monitor
Online Monitoring Method for SiC MOSFET Gate-oxide Health Status Based on Gate Reference Voltage
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Shengxu YU1, Zhiqiang WANG1, Guoqing XIN1, Xiaojie SHI1, Lingqi TAN2, Kai MA2
Affiliations
  • 1 School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China
  • 2 Electric Power Research Institute Guangdong Power Grid Co., Ltd Guangzhou 510080 China
Published: 2024-05-30 doi: 10.13234/j.issn.2095-2805.2024.3.248
Outline
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Gate oxide degradation is a key reliability issue that limits the widespread applications of silicon carbide metal-oxide-semiconductor field-effect transistors(SiC MOSFETs), and online monitoring is an important means to improve the reliability of SiC MOSFETs as it can obtain the gate-oxide health status in real time. In this paper, an online monitoring method for SiC MOSFET gate-oxide health status based on gate reference voltage is proposed. The basic principle of using the gate reference voltage to monitor the gate-oxide health status is introduced in detail, and a gate reference voltage online extraction circuit is also put forward. The designed extraction circuit was verified by pulse tests, indicating that it can achieve online extraction. In addition, aging tests were conducted, and results verified that the proposed method can effectively monitor the gate oxide health status. The designed circuit can be integrated into gate driver without significantly increasing the system complexity.

Gate-oxide  /  health status  /  silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET)  /  online monitoring
Shengxu YU, Zhiqiang WANG, Guoqing XIN, Xiaojie SHI, Lingqi TAN, Kai MA. Online Monitoring Method for SiC MOSFET Gate-oxide Health Status Based on Gate Reference Voltage[J]. Journal of Power Supply, 2024 , 22 (3) : 248 -257 . DOI: 10.13234/j.issn.2095-2805.2024.3.248
  • Science and Technology Project of China Southern Power Grid Corporation(GDKJXM20222074)
Year 2024 volume 22 Issue 3
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Article Info
doi: 10.13234/j.issn.2095-2805.2024.3.248
  • Receive Date:2024-02-05
  • Online Date:2025-07-21
  • Published:2024-05-30
Article Data
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History
  • Received:2024-02-05
  • Revised:2024-02-29
  • Accepted:2024-03-15
Funding
Science and Technology Project of China Southern Power Grid Corporation(GDKJXM20222074)
Affiliations
    1 School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China
    2 Electric Power Research Institute Guangdong Power Grid Co., Ltd Guangzhou 510080 China
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表12种不同金属材料的力学参数

Family
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Number of
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Number of
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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