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Simulation and Analysis of IGBT Dynamic Avalanche Failure Mechanism
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Yanxia GUAN, Ting LIU, Yong LIU, Jie DENG, Huiru WANG
Journal of Power Supply | 2024, 22(1) : 133 - 139
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Journal of Power Supply | 2024, 22(1): 133-139
Power Semiconductor Devices
Simulation and Analysis of IGBT Dynamic Avalanche Failure Mechanism
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Yanxia GUAN, Ting LIU, Yong LIU, Jie DENG, Huiru WANG
Affiliations
  • School of Information Science and Engineering Shenyang University of Technology Shenyang 110870 China
Published: 2024-01-30 doi: 10.13234/j.issn.2095-2805.2024.1.133
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The phenomenon of dynamic avalanche occurring during the IGBT turn-off process is one of the important reasons for its failure. To study the dynamic avalanche failure mechanism of IGBT, the Silvaco software was used to simulate and analyze this mechanism. Through the simulation and analysis of the breakdown mechanism, current density distribution and temperature distribution of dynamic avalanche, it is concluded that dynamic avalanche can generate moving current filaments and dead filaments which are either moving slowly or fixed. However, the failure of the device is caused by the dead filaments formed by dynamic avalanche. The dead filaments will lead to a sharp increase of local temperature in the IGBT, and the IGBT will eventually fail because the local temperature is too high to burn the device. On this basis, the causes of dead filaments are analyzed, and specific measures to prevent the dynamic avalanche failure of IGBT are also put forward.

IGBT  /  dynamic avalanche  /  failure mechanism  /  temperature  /  electric field
Yanxia GUAN, Ting LIU, Yong LIU, Jie DENG, Huiru WANG. Simulation and Analysis of IGBT Dynamic Avalanche Failure Mechanism[J]. Journal of Power Supply, 2024 , 22 (1) : 133 -139 . DOI: 10.13234/j.issn.2095-2805.2024.1.133
Year 2024 volume 22 Issue 1
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doi: 10.13234/j.issn.2095-2805.2024.1.133
  • Receive Date:2021-03-12
  • Online Date:2025-07-21
  • Published:2024-01-30
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  • Received:2021-03-12
  • Revised:2021-05-11
  • Accepted:2021-05-24
Affiliations
    School of Information Science and Engineering Shenyang University of Technology Shenyang 110870 China
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表12种不同金属材料的力学参数

Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)

Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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