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To improve the performance of modern unipolar power diodes and further break through the "Silicon limit", by increasing the junction depth of P+ region in traditional JBS diodes and introducing a super junction structure to reduce the chip thickness, the contradiction between on-state voltage drop and reverse blocking voltage of traditional unipolar devices is alleviated and the conduction current density of devices per unit area is improved. The effects of P-pillar concentration, N-pillar width and N-pillar concentration of super junction JBS diode on the forward conduction and reverse blocking characteristics are analyzed using a numerical method. The forward conduction and reverse blocking mechanism of super junction JBS diode is analyzed using the theory of electric field coupling effect, and a super junction JBS diode with 300 V is designed.
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| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |
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