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Junction Temperature Monitoring Method for SiC MOSFET Based on Turn-on Transient Drain-source Voltage
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Huifen DONG1, 2, Chan LI1, Zhoushuai CHEN3, Songming LIU1
Journal of Power Supply | 2026, 24(8) : 14 - 23
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Journal of Power Supply | 2026, 24(8): 14-23
• Power Semiconductor Devices and Drive Circuits •
Junction Temperature Monitoring Method for SiC MOSFET Based on Turn-on Transient Drain-source Voltage
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Huifen DONG1, 2, Chan LI1, Zhoushuai CHEN3, Songming LIU1
Affiliations
  • 1.College of Electronic Information and Automation, Civil Aviation University of China, Tianjin 300300, China
  • 2.Key Laboratory of Technology and Equipment of Tianjin Urban Air Transportation System, Tianjin 300300, China
  • 3.Semipower Technology Co., Ltd., Xi’an 710075, China
Published: 2026-08-30 doi: 10.13234/j.issn.2095-2805.2026.8.14
Outline
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Aimed at the widespread problems of low applicability and difficult monitoring in SiC metal-oxide-semiconductor field-effect transistor (SiC MOSFET) junction temperature monitoring methods, a junction temperature monitoring method based on turn-on transient drain-source voltage is proposed. Due to the existence of power loop inductance during the turn-on process, the turn-on transient drain-source voltage can reflect the change rate of current, and it is negatively correlated with the junction temperature through theoretical deduction. On this basis, a junction temperature estimation model based on turn-on transient drain-source voltage is established using a double-pulse test. Compared with the actual temperature, the junction temperature obtained by the junction temperature estimation model has higher accuracy, while the selected temperature sensitive electrical parameters show load-independence during the turn-on process. In addition, this method is simple to measure and calibrate without destroying the device itself, so it has a wider range of applications.

SiC metal-oxide-semiconductor field-effect transistor (SiC MOSFET)  /  reliability  /  junction temperature monitoring  /  turn-on transient drain-source voltage  /  temperature sensitive electrical parameter
董慧芬, 李婵, 陈周帅, 刘松名. 基于开通瞬态漏源电压的SiC MOSFET结温监测方法. 电源学报, 2026 , 24 (8) : 14 -23 . DOI: 10.13234/j.issn.2095-2805.2026.8.14
Huifen DONG, Chan LI, Zhoushuai CHEN, Songming LIU. Junction Temperature Monitoring Method for SiC MOSFET Based on Turn-on Transient Drain-source Voltage[J]. Journal of Power Supply, 2026 , 24 (8) : 14 -23 . DOI: 10.13234/j.issn.2095-2805.2026.8.14
Funding
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  • 2023 Civil Aviation Administration of China Safety Capacity Building Project(230324042)
  • Open Fund of Tianjin Key Laboratory of Urban Air Traffic System Technology and Equipment(TJKL-UAM-202401)
Appendix
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Year 2026 volume 24 Issue 8
37
5
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Article Info
doi: 10.13234/j.issn.2095-2805.2026.8.14
  • Receive Date：2024-09-12
  • Online Date：2026-10-29
  • Published：2026-08-30
Article Data
Affiliations
History
  • Received：2024-09-12
  • Revised：2024-12-16
  • Accepted：2025-02-05
Funding
2023 Civil Aviation Administration of China Safety Capacity Building Project(230324042)
Open Fund of Tianjin Key Laboratory of Urban Air Traffic System Technology and Equipment(TJKL-UAM-202401)
Affiliations
    1.College of Electronic Information and Automation, Civil Aviation University of China, Tianjin 300300, China
    2.Key Laboratory of Technology and Equipment of Tianjin Urban Air Transportation System, Tianjin 300300, China
    3.Semipower Technology Co., Ltd., Xi’an 710075, China
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