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An RCD Circuit Design to Suppress Gate Peak Voltage of GaN HEMT
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Feiyu CHEN  Student Member, CPSS, Shiqing QIN, Leyang QIAN, Qianru LI, Boxiang WANG, Guofeng YANG
Journal of Power Supply | 2026, 24(7) : 29 - 38
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Journal of Power Supply | 2026, 24(7): 29-38
• Power Semiconductor Devices and Drive Circuits •
An RCD Circuit Design to Suppress Gate Peak Voltage of GaN HEMT
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Feiyu CHEN  Student Member, CPSS, Shiqing QIN, Leyang QIAN, Qianru LI, Boxiang WANG, Guofeng YANG
Affiliations
  • School of Science, Jiangnan University, Wuxi 214122, China
Published: 2026-07-30 doi: 10.13234/j.issn.2095-2805.2026.7.29
Outline
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A gallium nitride high electron mobility transistor (GaN HEMT) is widely used in switching power supply design because of its superiority over silicon devices in terms of switching speed, switching loss, and power conversion. Due to the high di/dt and du/dt of GaN HEMT in the switching process, the gate-source of the device in the bridge circuit is easily affected by the parasitic parameters to generate excessive voltage oscillation, which will seriously affect the safety and reliability of the system. To address the above problems, firstly, the bootstrap driver circuit of GaN HEMT is constructed, the mechanism of oscillation is analyzed, and then the RCD circuit based on GaN HEMT is proposed to suppress the negative voltage spike caused by voltage oscillation. Finally, a pulse test circuit is built to experimentally verify the suppression effect of the RCD circuit. Compared with the traditional bootstrap driver circuit, the negative voltage spike after adding the RCD circuit changes from -3.35 V to -1.20 V, and there is no significant delay in the turn-on time of the turn-on process and the turn-off loss process is reduced. The above experimental results verify the effectiveness of the RCD circuit for directional suppression of gate-source oscillation.

GaN HEMT  /  voltage oscillation  /  bridge circuit  /  RCD circuit  /  pulse test
陈飞宇中国电源学会学生会员, 秦世清, 钱乐洋, 李倩茹, 王博翔, 杨国锋. 一种抑制GaN HEMT栅极尖峰电压的RCD电路设计. 电源学报, 2026 , 24 (7) : 29 -38 . DOI: 10.13234/j.issn.2095-2805.2026.7.29
Feiyu CHEN, Shiqing QIN, Leyang QIAN, Qianru LI, Boxiang WANG, Guofeng YANG. An RCD Circuit Design to Suppress Gate Peak Voltage of GaN HEMT[J]. Journal of Power Supply, 2026 , 24 (7) : 29 -38 . DOI: 10.13234/j.issn.2095-2805.2026.7.29
  • National Science Foundation of China(62374075)
Year 2026 volume 24 Issue 7
41
7
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Article Info
doi: 10.13234/j.issn.2095-2805.2026.7.29
  • Receive Date:2024-04-01
  • Online Date:2026-10-29
  • Published:2026-07-30
Article Data
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History
  • Received:2024-04-01
  • Revised:2024-09-21
  • Accepted:2024-11-03
Funding
National Science Foundation of China(62374075)
Affiliations
    School of Science, Jiangnan University, Wuxi 214122, China
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表12种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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