The breakdown voltage characteristics of power devices are primarily determined by the terminal. Variation of lateral doping (VLD) is a commonly used terminal technology, known for its advantages such as low cost, simple process, and high flexibility. In some cases, traditional linear VLD terminals have limitations, particularly in terms of breakdown voltage. A new nonlinear VLD terminal derived from theoretical analysis is presented, which features superior electrical characteristics and more uniform electric field distribution. This effectively weakens the concentration of the electric field and increases the breakdown voltage. In the same process and material conditions, the breakdown voltage peak of the linear VLD structure is 728 V, while the nonlinear VLD structure can weakens 758 V, achieving a 4.12% enhancement in breakdown voltage characteristics. Moreover, the new structure is relatively easy to implement with minimal increase in process complexity.