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Outline
The gallium nitride/silicon carbide (GaN/SiC) Cascode device is a composite structure, which employs a low-voltage GaN device as an assistant switch to change the high-voltage depletion-mode SiC device into an enhancement-mode device. A normally-off GaN/SiC Cascode device was constructed by low-voltage enhancement-mode gallium nitride high electron mobility transistor (GaN HEMT) and high-voltage depletion-mode silicon carbide junction field-effect transistor (SiC JFET). The Cascode device combined the advantages of GaN HEMT such as high switching speed and simple gate-driving circuit and the high blocking voltage of SiC JFET. Both the operating principle and the switching process of GaN/SiC Cascode device were analyzed in detail, and its static characteristics were also tested. A double-pulse test platform was constructed, and the switching loss of the GaN/SiC Cascode device was compared with those of the Si/SiC Cascode device and SiC JFET at varying load current. Results show that the turn-off loss of GaN/SiC Cascode device was the lowest. In addition, the three devices were applied in an LLC resonant converter respectively, and the conversion efficiency of the converter was tested, indicating that the LLC resonant converter based on GaN/SiC Cascode device exhibited the highest conversion efficiency.
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| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |
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