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Research on Improved Online Dead-time Compensation Method for GaN HEMT Power Devices
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Yunxiang GAO  Member, CPSS1, Wei LIU1, Shan HUANG2, Xiaohong WANG2, Tinghao JIANG1
Journal of Power Supply | 2025, 23(6) : 340 - 352
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Journal of Power Supply | 2025, 23(6): 340-352
• Power Semiconductor Devices •
Research on Improved Online Dead-time Compensation Method for GaN HEMT Power Devices
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Yunxiang GAO  Member, CPSS1, Wei LIU1, Shan HUANG2, Xiaohong WANG2, Tinghao JIANG1
Affiliations
  • 1.School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China
  • 2.School of Automation Science and Engineering, South China University of Technology, Guangzhou 510000, China
Published: 2025-10-30 doi: 10.13234/j.issn.2095-2805.2025.6.340
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To ensure the safe and reliable operation of a three-phase bridge leg, it is necessary to set a reasonable dead-time. Due to its own characteristics, the voltage variation in the dead-time of a gallium nitride high-electron mobility transistor (GaN HEMT) is different from those of traditional Si devices. In this paper, the problem of large reverse conduction voltage drops in GaN HEMT power devices is analyzed, and an improved online dead-time compensation method based on GaN HEMT power devices is proposed. This method can not only avoid the influence of circuit noise on the judgment of current direction, but also reduce the phase voltage error and current harmonics, thus improving the circuit stability. Finally, the effectiveness of the improved online dead-time compensation method was verified by simulation experiments and the construction of an experimental platform, indicating that it has obvious advantages over the traditional dead-time compensation method under the condition of large reverse conduction voltage drops.

Gallium nitride high-electron mobility transistor (GaN HEMT)  /  online dead-time compensation  /  harmonic suppression  /  efficiency
高赟翔中国电源学会会员, 刘伟, 黄珊, 王孝洪, 姜庭豪. GaN HEMT功率器件的改进型在线死区补偿方法研究. 电源学报, 2025 , 23 (6) : 340 -352 . DOI: 10.13234/j.issn.2095-2805.2025.6.340
Yunxiang GAO, Wei LIU, Shan HUANG, Xiaohong WANG, Tinghao JIANG. Research on Improved Online Dead-time Compensation Method for GaN HEMT Power Devices[J]. Journal of Power Supply, 2025 , 23 (6) : 340 -352 . DOI: 10.13234/j.issn.2095-2805.2025.6.340
Appendix
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Year 2025 volume 23 Issue 6
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Article Info
doi: 10.13234/j.issn.2095-2805.2025.6.340
  • Receive Date：2023-05-04
  • Online Date：2026-10-26
  • Published：2025-10-30
Article Data
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History
  • Received：2023-05-04
  • Revised：2023-05-30
  • Accepted：2023-07-27
Affiliations
    1.School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China
    2.School of Automation Science and Engineering, South China University of Technology, Guangzhou 510000, China
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
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Genus		 种数
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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