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Loss Calculation Method for SiC MOSFET in Three-phase Full-bridge Considering Parasitic Capacitance and Parasitic Inductance
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Kuihao CHEN  Student Member, CPSS1, 2, Xu LIU1, 2
Journal of Power Supply | 2025, 23(4) : 295 - 305
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Journal of Power Supply | 2025, 23(4): 295-305
• Power Semiconductor Devices •
Loss Calculation Method for SiC MOSFET in Three-phase Full-bridge Considering Parasitic Capacitance and Parasitic Inductance
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Kuihao CHEN  Student Member, CPSS1, 2, Xu LIU1, 2
Affiliations
  • 1.State Key Laboratory of Reliability and Intelligence of Electrical Equipment (School of Electrical Engineering, Hebei University of Technology), Tianjin 300130, China
  • 2.Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, Tianjin 300130, China
Published: 2025-07-30 doi: 10.13234/j.issn.2095-2805.2025.4.295
Outline
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The loss calculation accuracy of a three-phase full-bridge inverter will be reduced if the parasitic capacitance and parasitic inductance loss of SiC MOSFET in the switching process and the conduction loss caused by changes in the duty cycle in the conduction process are ignored. To solve the problems, a physical model of SiC MOSFET considering parasitic capacitance and parasitic inductance was proposed. The parasitic capacitance and parasitic inductance were obtained by querying a data sheet and using an oscillation method. The losses of parasitic inductance and parasitic capacitance during the switching process were calculated, the average conduction loss equation under space vector pulse width modulation (SVPWM) was deduced, and the three-phase full-bridge loss was obtained. Finally, experiments were carried out on the control system of a permanent magnet synchronous motor based on SiC MOSFET. The influence of PWM frequency on the three-phase full-bridge loss was analyzed, and the accuracy of parameters for the physical model of SiC MOSFET was verified. Moreover, the loss calculation method based on the physical model of SiC MOSFET can improve the loss calculation accuracy of the inverter.

SiC MOSFET  /  three-phase full-bridge inverter loss  /  parasitic inductance  /  parasitic capacitance
陈魁昊中国电源学会学生会员, 刘旭. 考虑寄生电容和电感影响的SiC MOSFET三相全桥损耗计算方法. 电源学报, 2025 , 23 (4) : 295 -305 . DOI: 10.13234/j.issn.2095-2805.2025.4.295
Kuihao CHEN, Xu LIU. Loss Calculation Method for SiC MOSFET in Three-phase Full-bridge Considering Parasitic Capacitance and Parasitic Inductance[J]. Journal of Power Supply, 2025 , 23 (4) : 295 -305 . DOI: 10.13234/j.issn.2095-2805.2025.4.295
  • National Natural Science Foundation of China(52077055)
Year 2025 volume 23 Issue 4
67
17
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Article Info
doi: 10.13234/j.issn.2095-2805.2025.4.295
  • Receive Date:2022-05-11
  • Online Date:2026-10-26
  • Published:2025-07-30
Article Data
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History
  • Received:2022-05-11
  • Revised:2022-08-03
  • Accepted:2022-08-15
Funding
National Natural Science Foundation of China(52077055)
Affiliations
    1.State Key Laboratory of Reliability and Intelligence of Electrical Equipment (School of Electrical Engineering, Hebei University of Technology), Tianjin 300130, China
    2.Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, Tianjin 300130, China
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多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
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