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Modeling and Designing Method for Planar Differential Rogowski Coil for SiC MOSFET Short-circuit Protection
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Teng LI, Zhen XIN, Yafei SHI, Ju XUE
Journal of Power Supply | 2025, 23(1) : 219 - 228
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Journal of Power Supply | 2025, 23(1): 219-228
Power Semiconductor Devices
Modeling and Designing Method for Planar Differential Rogowski Coil for SiC MOSFET Short-circuit Protection
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Teng LI, Zhen XIN, Yafei SHI, Ju XUE
Affiliations
  • State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, China
Published: 2025-01-30 doi: 10.13234/j.issn.2095-2805.2025.1.219
Outline
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With the development of wide band gap devices, SiC MOSFET has been widely applied, and the research on its short-circuit protection has become an important topic to ensure the reliability of power electronic equipment. In view of the short short-circuit withstand time of SiC MOSFET and the difficulty in short-circuit fault protection, a short-circuit detection method for SiC MOSFET based on a planar differential Rogowski coil is proposed, which realizes a rapid identification of short-circuit fault by measuring the drain source current of the circuit and has advantages such as a fast response speed, a strong anti-interference capability and complete isolation from the main circuit. First, the working process of the SiC MOSFET short-circuit detection method based on the planar Rogowski coil is introduced. The partial element equivalent circuit (PEEC) modeling method for planar Rogowski coil is studied in detail, and an equivalent model which can reflect the coil’s high-frequency characteristics is obtained. At the same time, the influence of the geometric structure of the planar Rogowski coil on its performance is analyzed, and an optimal design scheme considering both the high gain and high bandwidth is proposed. Aimed at the problem of low measurement accuracy of the Rogowski coil in an environment with strong electromagnetic interference, a scheme of using the differential coil is put forward to improve the anti-interference performance. Finally, the anti-interference per-formance of the designed planar differential Rogowski coil and the reliability of short-circuit protection method based on this coil were verified by experimental results.

SiC MOSFET  /  short-circuit protection  /  planar Rogowski coil  /  partial element equivalent circuit (PEEC) modeling  /  coil design
Teng LI, Zhen XIN, Yafei SHI, Ju XUE. Modeling and Designing Method for Planar Differential Rogowski Coil for SiC MOSFET Short-circuit Protection[J]. Journal of Power Supply, 2025 , 23 (1) : 219 -228 . DOI: 10.13234/j.issn.2095-2805.2025.1.219
  • Youth Program of National Natural Science Foundation of China(51907048)
Year 2025 volume 23 Issue 1
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Article Info
doi: 10.13234/j.issn.2095-2805.2025.1.219
  • Receive Date:2022-03-15
  • Online Date:2025-07-09
  • Published:2025-01-30
Article Data
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History
  • Received:2022-03-15
  • Revised:2022-05-02
  • Accepted:2022-05-24
Funding
Youth Program of National Natural Science Foundation of China(51907048)
Affiliations
    State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, China
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表12种不同金属材料的力学参数

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Number of
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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