Compared with the traditional silicon(Si) devices, the gallium nitride(GaN) devices have lower parasitic parameters, a faster switching speed and a smaller on-resistance, which will easily lead to the phenomenon of continuous oscillation during their switching-on process and further result in the circuit instability. Therefore, it is necessary to suppress this phenomenon in practical circuits. Under this background, a negative conductance model of a bridge circuit under the conventional driving scheme is established at first, and the oscillation stability of the circuit is analyzed. Then, by adding optimization to the conventional driving scheme, the corresponding negative conductance model is established. The optimization schemes of series damping represented by changing the resistance and adding ferrite beads and those of parallel low impedance represented by adding RC snubber are selected, respectively. With this model, the influence of adding the driving optimization schemes on the oscillation stability of the circuit can be identified, and the changes in the stability before and after the addition were verified by experimental results, providing a reference for the driving circuit to select its appropriate driving optimization scheme.
| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |