The wide applications of insulated gate bipolar transistors (IGBTs) pose high requirements for their switching performance. However, the conventional gate drive(CGD) has limited regulation effect on voltage and current overshoots in the switching process of IGBTs, because it always sacrifices the switching time and switching loss while reducing overshoots. A novel active gate drive(AGD) control method is proposed to suppress the current and voltage overshoots generated in the switching process of IGBTs, i.e., the driving voltage at the high di/dt and dv/dt stages of IGBTs is adjusted to reduce the changing rates of current and voltage, so as to suppress the current and voltage overshoots. Experimental results show that compared with the conventional driving methods, the proposed method can significantly reduce the current and voltage overshoots in the switching processes of IGBTs without reducing the switching speed or increasing the switching loss.