PDF
Full
Outline
Silicon carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET) has attracted attention from the industry owing to its excellent characteristics such as high voltage, high frequency and low conduction loss. However, compared with the silicon-based IGBT, the problem of gate oxide reliability caused by the high defect density at the SiC/SiO2 gate oxide interface has become a key bottleneck restricting the large-scale applications of SiC MOSFET devices. By sorting out and analyzing the research results of the gate oxide reliability of SiC MOSFET at home and abroad in recent years, the causes of the gate oxide reliability problems at present were elaborated upon, and various commonly-used gate oxide reliability evaluation methods were summarized and compared. Finally, the gate oxide reliability of SiC MOSFET under extreme operating conditions and the development status of technologies for improving its performance were discussed.
PDF
620
281
| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |
关闭全屏
No. 86 Xueyuan South Road, Haidian District, Beijing
010-62199257
qkjq@cast.org.cn
Copyright © 2025 China Association for Science and Technology. All rights reserved. For all open access content, the relevant licensing terms apply.
Sponsored by the Office of the Leading Group for Cybersecurity and Informatization of CAST, and supported by Science and Technology Review Publishing House
