Accurately obtaining the electromagnetic characteristics of high-voltage and high-power switching devices is crucial for predicting the electromagnetic interference in a system in which the devices are located. Research is focused on an equivalent method of switch waveforms for analyzing the electromagnetic characteristics of high-voltage and high-power switching devices. Aimed at the problem that the existing equivalent waveforms are too ideal to reflect the complex spectral components in the switching transients of devices, an analytical model for the electromagnetic characteristics of devices considering their switching processes is proposed. Starting from the time-domain analytical formula for the analytical model and based on the Fourier transform theory, the frequency-domain analytical formula for the analytical model is derived, and the spectral envelope characteristic parameters are analyzed to obtain the spectral characteristics of the analytical model. The theoretical analysis was verified by using the measured switching waveforms of Si IGBT and SiC MOSFET devices.
| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |