Home Journals Articles Updates About
CN
image
收藏切换
Test Platform and Degradation Mechanism of SiC MOSFET under Dynamic High-temperature Reverse Bias Stress
收藏切换
PDF
Luwei ZUO1, Zhen XIN1, Hui MENG1, Ze ZHOU1, Bin YU2, 3, Haoze LUO2
Journal of Power Supply | 2024, 22(3) : 211 - 219
Less
收藏切换
Journal of Power Supply | 2024, 22(3): 211-219
• Reliability Analysis •
Test Platform and Degradation Mechanism of SiC MOSFET under Dynamic High-temperature Reverse Bias Stress
Full
Luwei ZUO1, Zhen XIN1, Hui MENG1, Ze ZHOU1, Bin YU2, 3, Haoze LUO2
Affiliations
  • 1 State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology Tianjin 300401 China
  • 2 School of Electrical Engineering Zhejiang University Hangzhou 310058 China
  • 3 School of Automation Nanjing University of Information Science and Technology Nanjing 210044 China
Published: 2024-05-30 doi: 10.13234/j.issn.2095-2805.2024.3.211
Outline
收藏切换

To study the degradation mechanism of silicon carbide metal-oxide-semiconductor field effect transistors (SiC MOSFETs) under dynamic drain-source stress, a dynamic reverse bias test platform with an adjustable dVds/dt capability up to 80 V/ns was developed. A dynamic high-temperature reverse bias test of commercial SiC MOSFET was carried out, and the effect of dynamic drain-source stress with a high voltage change rate on the electrical characteristics of SiC MOSFET was discussed. Experimental results show that the threshold voltage and forward conduction voltage of the bulk diode increased, indicating that the gate oxygen layer and the bulk diode above the JFET region of the device may be degraded. Sentaurus TCAD was used to analyze the weak position of plane-gate SiC MOSFET under high drain-source voltage and a high voltage change rate, and hole traps were set at the gate oxygen layer junction and the body diode region to simulate the effect of dynamic high-temperature reverse bias on the dynamic and static parameters of SiC MOSFET.

Dynamic high-temperature reverse bias test  /  degradation mechanism  /  silicon carbide metal-oxide-semiconductor field effect transistor(SiC MOSFET)  /  adjustable dVds/dt
Luwei ZUO, Zhen XIN, Hui MENG, Ze ZHOU, Bin YU, Haoze LUO. Test Platform and Degradation Mechanism of SiC MOSFET under Dynamic High-temperature Reverse Bias Stress[J]. Journal of Power Supply, 2024 , 22 (3) : 211 -219 . DOI: 10.13234/j.issn.2095-2805.2024.3.211
Appendix
Less
Year 2024 volume 22 Issue 3
PDF
333
135
Cite this Article
BibTeX
Article Info
doi: 10.13234/j.issn.2095-2805.2024.3.211
  • Receive Date：2024-01-31
  • Online Date：2025-07-21
  • Published：2024-05-30
Article Data
Affiliations
History
  • Received：2024-01-31
  • Revised：2024-02-09
  • Accepted：2024-02-23
Affiliations
    1 State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology Tianjin 300401 China
    2 School of Electrical Engineering Zhejiang University Hangzhou 310058 China
    3 School of Automation Nanjing University of Information Science and Technology Nanjing 210044 China
References
Share
https://castjournals.cast.org.cn/joweb/dyxb/EN/10.13234/j.issn.2095-2805.2024.3.211
Share to
QR

Scan QR to access full text

Cite this article
BibTeX
Citations
表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
关闭全屏
  • BibTeX
  • EndNote
  • RefWorks
  • TxT
Links
Articles
Latest Articles
Most Read
Collections
Updates
Events
News
Multimedia
About
About Us
Contact
No. 86 Xueyuan South Road, Haidian District, Beijing
100081
010-62199257
qkjq@cast.org.cn

Copyright © 2025 China Association for Science and Technology. All rights reserved. For all open access content, the relevant licensing terms apply.
Sponsored by the Office of the Leading Group for Cybersecurity and Informatization of CAST, and supported by Science and Technology Review Publishing House