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Silicon carbide (SiC) is a promising wide-bandgap semiconductor material owing to its excellent electrical and thermal characteristics. Power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on SiC are suitable for high-power fields, and their high-temperature gate oxide reliability is one of the most concerned characteristics. In this paper, the high-temperature gate oxide reliability of self-developed SiC MOSFETs is compared with that of the foreign SiC MOSFETs of the same specification by positive and negative high-temperature gate bias (HTGB) tests. The negative HTGB test results show that the deviation of threshold voltage of self-developed SiC MOSFETs is almost equal to that of the foreign SiC MOSFETs, and the maximum discrepancy between them is about 4.52%. However, the positive HTGB test results show that the deviation of threshold voltage of self-developed SiC MOSFETs is smaller than that of the foreign SiC MOSFETs, with a maximum discrepancy of 11%. The reason for the better performance of self-developed devices is that an appropriate amount of nitrogen is added to the SiC/SiO2 interface, which can passivate interface defects and reduce the generation of fast interface states, so that the total interface state density is minimized.
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| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |
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