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Double-sided SiC MOSFET Bi-directional Module with Flexible Buffering Spacers
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Jing LI1, Junlin CAO1, 2, Guoquan LU3, Yunhui MEI2
Journal of Power Supply | 2024, 22(1) : 140 - 146
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Journal of Power Supply | 2024, 22(1): 140-146
• Power Semiconductor Devices •
Double-sided SiC MOSFET Bi-directional Module with Flexible Buffering Spacers
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Jing LI1, Junlin CAO1, 2, Guoquan LU3, Yunhui MEI2
Affiliations
  • 1 School of Materials Science and Engineering Tianjin University Tianjin 300072 China
  • 2 School of Electrical Engineering Tianjin University of Technology Tianjin 300387 China
  • 3 Department of Electrical and Computer Science Virginia Tech University Virginia 24061 USA
Published: 2024-01-30 doi: 10.13234/j.issn.2095-2805.2024.1.140
Outline
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The development of power modules towards high temperature, high power and high density raises higher requirements for the packaging structures of modules. Compared with the traditional wire-bond structure, the double-sided structure has attracted more and more attention owing to its characteristics such as high heat dissipation capacity and low parasitic inductance. However, the mismatch of thermal expansion coefficient between materials used in the double-sided structure makes the structure suffer tremendous thermo-mechanical stress, thus reducing the reliability of power module. Therefore, to develop double-sided bi-directional modules with low thermo-mechanical stress, the effects of chip layouts on the heat dissipation performance of modules and the parasitic inductance were analyzed by simulations at first. Then, a flexible buffering spacer with low Young's modulus is proposed accordingly. The feasibility of reducing the thermo-mechanical stress and improving the reliability of the module was preliminarily proved by simulation and experimental results.

Double-sided  /  bi-directional SiC module  /  thermo-mechanical stress  /  Young's modulus
Jing LI, Junlin CAO, Guoquan LU, Yunhui MEI. Double-sided SiC MOSFET Bi-directional Module with Flexible Buffering Spacers[J]. Journal of Power Supply, 2024 , 22 (1) : 140 -146 . DOI: 10.13234/j.issn.2095-2805.2024.1.140
Funding
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  • National Natural Science Foundation of China(51922075)
  • National Natural Science Foundation of China(U1966212)
  • Tianjin Natural Science Fund(20JCYBJC00970)
  • Tianjin Natural Science Fund(19JCJQJC61700)
Appendix
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Year 2024 volume 22 Issue 1
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Article Info
doi: 10.13234/j.issn.2095-2805.2024.1.140
  • Receive Date：2021-03-11
  • Online Date：2025-07-21
  • Published：2024-01-30
Article Data
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History
  • Received：2021-03-11
  • Revised：2021-03-22
  • Accepted：2021-03-26
Funding
National Natural Science Foundation of China(51922075)
National Natural Science Foundation of China(U1966212)
Tianjin Natural Science Fund(20JCYBJC00970)
Tianjin Natural Science Fund(19JCJQJC61700)
Affiliations
    1 School of Materials Science and Engineering Tianjin University Tianjin 300072 China
    2 School of Electrical Engineering Tianjin University of Technology Tianjin 300387 China
    3 Department of Electrical and Computer Science Virginia Tech University Virginia 24061 USA
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https://castjournals.cast.org.cn/joweb/dyxb/EN/10.13234/j.issn.2095-2805.2024.1.140
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表12种不同金属材料的力学参数
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小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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