The mechanical properties of polymer matrix composites often decrease due to hygrothermal environment. The hygrothermal aging tests and the compression tests are carried out before and after aging on the T700/BP9916 composites plate with open-hole， and the open-hole compression（OHC） strength is obtained. The residual stress distribution in the specimen after hygrothermal aging is simulated by ABAQUS software. Based on the hygrothermal expansion behavior and linear relationship between mechanical properties and the moisture absorption， OHC tests before and after hygrothermal aging are simulated. The results show that the moisture absorption of the T700/BP9916 composites have typical Fick diffusion behavior， and the maximum load of the OHC after hygrothermal aging decreases by approximately 5.2%. The internal stress caused by hygrothermal aging is very small and have no impact on the strength. The relative mass increment-time curve of moisture absorption obtained from the FEM simulation is in good agreement with the experimental. The relative error of maximum load of OHC test between the simulated and the experimental value is only 0.88% with non-hygrothermal aging， and the relative error is 6.21% during the hygrothermal environment. The increase in error is due to the fact that only the linear relationship between hygrothermal effect and the linear decline of material properties is considered in the simulation calculation.

Lead sulfide quantum dots （PbS QDs） have excellent optoelectronic properties and strong near-infrared light absorption，making them ideal materials for the preparation of near-infrared photodetectors. However，there are still challenges in the process and insufficient performance of the PbS QDs-based optoelectronic detection. In this study，PbS QDs are synthesized by the hot injection method，and the PbS quantum junction infrared detector is prepared by the layer-by-layer method and the solid-state ligand exchange method. The photoelectric performance of the PbS quantum junction infrared detector is improved by the thermal annealing process，and the effect of annealing temperature on the photoelectric performance of the PbS quantum junction is described. The results show that annealing effectively reduces the dark current of the PbS quantum junction infrared detector while increasing the photocurrent，and obtains a stable photoresponse current output. After annealing，the response time of the PbS quantum junction infrared detector is shortened，resulting in a time of 1.9 ms and a delay time of 3.2 ms. The sensitivity of the detector is improved，and the responsivity and detectivity are increased by 1.2 times and 1.3 times，respectively，resulting in a responsivity of 0.78 A·W^-1 and a detectivity of \mathrm{7.8}\times {\mathrm{10}}^{\mathrm{11}}\mathrm{c}\mathrm{m}\bullet \mathrm{H}{\mathrm{z}}^{\mathrm{1}/\mathrm{2}}\bullet {\mathrm{W}}^{-\mathrm{1}}. Annealing effectively improves the crystallinity and the carrier mobility of PbS QDs thin films，while reducing the defect states at the film and interface，resulting in a comprehensive improvement in the optoelectronic performance of PbS quantum junction infrared detectors.