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Preparation of high bonding strength C-SiC composite coatings on single crystal Si substrate by extra-C source method
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Wenkang HOU1, 2, Weichen JING1, 2, Tianying XIONG2, Mingqiang TANG2
Journal of Materials Engineering | 2026, 54(3) : 222 - 228
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Journal of Materials Engineering | 2026, 54(3): 222-228
• RESEARCH ARTICLE •
Preparation of high bonding strength C-SiC composite coatings on single crystal Si substrate by extra-C source method
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Wenkang HOU1, 2, Weichen JING1, 2, Tianying XIONG2, Mingqiang TANG2
Affiliations
  • 1.School of Materials Science and Engineering，University of Science and Technology of China，Shenyang 110016，China
  • 2.Institute of Metal Research，Chinese Academy of Sciences，Shenyang 110016，China
Published: 2026-03-20 doi: 10.11868/j.issn.1001-4381.2025.000005
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The C-SiC composite coating is integrally prepared on the surface of a single-crystal Si（100） substrate using chemical vapor deposition（CVD） with graphite as the extra-C source and HMDSO-H2 as the precursor system. The surface morphology， phase composition， mechanical properties， and thermal shock resistance of the composite coatings are analyzed by scanning electron microscopy（SEM）， X-ray diffraction（XRD）， nanoindentation and scratch testing. The results show that the extra-C source enable simultaneous deposition of a carbon buffer layer and SiC coating. The prepared C-SiC composite coating exhibits a total thickness of 50 μm （including a 10 μm-thick C buffer layer）， dense structure， and excellent adhesion to the single-crystal Si substrate. The coating shows outstanding thermal shock resistance， with surface cracks emerging after 20 thermal cycles between 20 ℃ and 1200 ℃， but no warping or delamination occurs. The nanoindentation reveals that hardness and elastic modulus of the composite coating are 23.25 GPa and 272.3 GPa， respectively， while the scratch testing indicates an interfacial adhesion strength between the coating and substrate is 29 N.

SiC coating  /  chemical vapor deposition  /  adhesion strength  /  buffer layer
侯文康, 景玮晨, 熊天英, 唐明强. 辅助C源法在单晶Si基体上制备高结合强度C-SiC复合涂层. 材料工程, 2026 , 54 (3) : 222 -228 . DOI: 10.11868/j.issn.1001-4381.2025.000005
Wenkang HOU, Weichen JING, Tianying XIONG, Mingqiang TANG. Preparation of high bonding strength C-SiC composite coatings on single crystal Si substrate by extra-C source method[J]. Journal of Materials Engineering, 2026 , 54 (3) : 222 -228 . DOI: 10.11868/j.issn.1001-4381.2025.000005
Appendix
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Year 2026 volume 54 Issue 3
48
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Article Info
doi: 10.11868/j.issn.1001-4381.2025.000005
  • Receive Date：2025-01-07
  • Online Date：2026-10-27
  • Published：2026-03-20
Article Data
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History
  • Received：2025-01-07
  • Accepted：2025-04-26
Funding
Affiliations
    1.School of Materials Science and Engineering，University of Science and Technology of China，Shenyang 110016，China
    2.Institute of Metal Research，Chinese Academy of Sciences，Shenyang 110016，China
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表12种不同金属材料的力学参数
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小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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