Balancing switching and transient response for ion gating in field-effect nanofluidic transistors
aFaculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
bYangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
cInstitute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
dSchool of Mathematics and Physics, China University of Geosciences, Wuhan 430074, China
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