As an important semiconductor photocatalyst, bismuth vanadate (BiVO
4) has been widely examined because of its plentiful abundance, low cost, excellent (photo)-electrochemical stability in aqueous solutions and nontoxic. The BiVO
4 exists in three crystal structures: Scheelite structure with tetragonal phase and monoclinal phase and zircon structure with tetragonal phase. Among the three crystal structures, scheherite structure with monoclinal phase has higher thermodynamic stability and higher catalytic activity than other structures, and is most commonly used in photo-electrocatalysis. For the scheelite structure, BiVO
4 with tetragonal and monoclinic phases are dissimilar as the local environments of V and Bi ions are notably distorted in the latter. Hence, the V-O bonds in tetragonal scheelite BiVO
4 are all of equal length (1.72 Å), while two different V-O bond lengths (1.77 Å and 1.69 Å) are present in monoclinic scheelite BiVO
4. In particular, the Bi
3+ lone electron on the Bi 6s orbital causes the partial deformation of the Bi-O ionic bond to enhance the distortion of the BiO
8 dodecahedron. The distortion of the VO
4 octahedron causes the center positions of the positive and negative charges to be separated. As a result, an internal electric field is generated, which is very conducive to the separation of photogenerated electron-hole pairs, so monoclinic BiVO
4 has higher photocatalytic performance than the other two structures. More recently, monoclinic BiVO
4 has received great attention as a photoanode material for PEC water splitting because BiVO
4 photoanode satisfy the necessary requirements listed above [
11]. This interest originates from an appropriate bandgap structure (Eg ≈ 2.4 eV) of BiVO
4 that not only favors good light absorption but also provides a relatively negative CB edge (~0.02 V
vs. RHE) to undergo water oxidation reaction driven by visible light. However, it has its own shortcomings of poor electron conductivity and sluggish water oxidation kinetics [
12]. The poor electron transport performance of BiVO
4 may be due to the disconnection of VO
4 tetrahedron units in the crystal structure of the material, indicating that that the photoexcited electrons in the V 3d conduction band have to hop between the VO
4 tetrahedra [
5]. In contrast, a theoretical study on the hole transport in BiVO
4 revealed a relatively weak hole localization in this material [
6], again signifying that the charge transport in BiVO
4 is primarily limited by electron mobility. For example, the photocurrent densities achieved for unmodified BiVO
4 photoanodes (1.0 mA/cm
2 and 0.81 mA/cm
2) are still far below its theoretical maximum photocurrent of 7.5 mA/cm
2 under standard AM 1.5 solar light irradiation [
13]. In addition, Subramanyam
et al. reported that the solar-to-hydrogen conversion (STH) for pure BiVO
4 photoanode is 0.82% at 0.61 V
vs. RHE, much lower than that the theoretical STH value of 9.2% [
14].