With the aim to study the plating/stripping processes of Zn, the CV measurements were employed at a scanning rate of 0.1 mV/s and a voltage window of −0.3~1.5 V (
vs. Zn/Zn
2+). As shown in
Fig. 3a, the reduction peak (at −0.17 V) and the oxidation peak (at 0.17 V) corresponding to the plating/stripping behavior of Zn can be observed, which indicates high reversibility of Zn on LF- Ti
3C
2T
x. In addition, during the plating/stripping process, the oxidation peak decreases gradually with the decrease of the corresponding reduction peak current. It is worth noting that a reduction peak occurring at the potential of 0.7V during the initial cycle can be observed in the inset of the CV curve, which will be further investigated in the following section. To demonstrate the advantage of Ti-based MXene LF-Ti
3C
2T
x as a capable substrate for Zn plating, a commercial Ti mesh substrate is chosen as a comparison.
Fig. 3b shows the voltage-capacity curves of the first plating process of Zn on different current collectors in a half-cell, in which the Ti mesh or LF-Ti
3C
2T
x is the cathode and bare Zn foil is the anode. During the first discharge, Zn
2+ is reduced to metallic zinc and plated on the current collector. As an important parameter to evaluate the performance of the current collector, the nucleation overpotential is referred to as the voltage difference between the lowest voltage and equilibrium potential during the plating process. It can be observed that the nucleation overpotentials are 65.4 and 32 mV on Ti and LF-Ti
3C
2T
x current collectors, respectively. The lower nucleation overpotential of LF-Ti
3C
2T
x demonstrates the smaller nucleation barrier and more uniform nucleation behavior. Moreover, it is worth noting that an obvious discharge platform around 0.7V is observed for LF-Ti
3C
2T
x, corresponding to the CV curve in
Fig. 3a well. Combined with the results of XPS characterization, the discharge platform would be derived from the irreversible reactions between Zn
2+ and oxygen-containing functional groups in the LF-Ti
3C
2T
x host, which is common in alkaline metal battery systems [
33]. The voltage polarization and Coulomb efficiency of Zn anodes are considered as important factors to evaluate the electrochemical performance of current collectors.
Figs. 3c and
d display the voltage-capacity curves of Zn plating/stripping processes on Ti and LF-Ti
3C
2T
x, respectively. The average voltage polarization of the Ti current collector is 60.3 mV. The Coulombic efficiency of the initial cycle is lower than that of the subsequent cycle, indicating that the plated metal zinc on Ti is not completely stripped and returned to the Zn sheet. Furthermore, with the charge/discharge cycle going on, the voltage curve begins to be unstable with a slight voltage drop only since the 30
th cycle. Severe voltage changes occur at the 35
th cycle with the Coulomb efficiency of 43.3%, indicating uneven plating/stripping behaviors and fast formation of dendritic Zn. When LF-Ti
3C
2T
x is used as a current collector, favorable results can be obtained. The average voltage polarization of 53 mV is achieved, which is lower than the voltage polarization of the Ti current collector. However, the Coulombic efficiency of the initial cycle is lower than that of Ti current collector, which would be ascribed to the irreversible reactions taking place between the oxygen-containing functional groups of LF-Ti
3C
2T
x and Zn
2+. With the cycle increasing, the Zn plating/stripping processes on LF-Ti
3C
2T
x current collector show high Coulombic efficiency and stable plating/stripping curves over 50 cycles, suggesting high reversibility and uniform Zn growth. With the increase of current density, the nucleation potentials of Zn plating increase on Ti and LF-Ti
3C
2T
x current collectors, which indicates that the current density has a certain influence on the plating behavior of Zn. In addition, it can be clearly observed that the nucleation overpotential of Zn plating on LF-Ti
3C
2T
x is lower than that plating on Ti, which can be found in
Fig. 3e. These results indicate that LF-Ti
3C
2T
x can reduce the nucleation potential of zinc deposition, promoting uniform deposition, and inhibiting the Zn dendrite growth. In order to evaluate the cyclic stability of Zn@LF-Ti
3C
2T
x as Zn anode for AZB, the symmetrical cells were tested at different current densities and capacities. Before the tests, 10 mAh/cm
2 Zn metal was deposited in current collectors by electrodeposition method at 10 mA/cm
2, named Zn@Ti and Zn@LF-Ti
3C
2T
x. Then, the symmetrical batteries were assembled using the two identical prepared Zn anodes. As shown in
Fig. 3f, during the initial state, the Zn@Ti//Zn@Ti cell displays smaller polarization than that with Zn@LF-Ti
3C
2T
x due to the 3D structure of Ti mesh. However, the Zn@Ti//Zn@Ti cell shows a large voltage change after 35 h at 5 mA/cm
2, which would be derived from the formation of ZnO layer on the surface of Zn with the increased internal resistance and unstable voltage curves [
15]. On the contrary, the Zn@LF-Ti
3C
2T
x//Zn@LF-Ti
3C
2T
x cell delivers a stable cycle for 280 h with an average polarization voltage of 63 mV. The voltage platform is relatively stable with slight fluctuation, indicating uniform plating/striping behaviors induced by the LF-Ti
3C
2T
x scaffold.