Doping consists of adding impurities to semiconductors to generate or modify their electronic states [
70,
71]. Using doping elements, intermediate energy levels can be introduced into the semiconductor photocatalysts to tune their optical properties and energy band structures [
72,
73]. Additionally, doping influences the band structure by changing the Fermi level of the semiconductor. Thus, doping BiOBr affects the local electronic density to yield enlarged build-in electric fields, as well as improved bulk phase charge separation. This, in turn, would improve the photocatalytic activities of doped-semiconductor catalysts. Shao
et al. inserted additional energy levels into the bandgap of BiOBr to produce a denser electron density around CB after doping with cobalt (Co) [
74]. Under visible-light irradiation, the electrons in the VB of Co-doped BiOBr were excited to the Co-doped energy level to promote the formation of holes in VB. The electrons captured by the Co-doping level were further excited to CB and participate in the photocatalytic reaction. The existence of Co-doping energy level led to enhanced charge separation efficiency of Co-doped BiOBr, as well as widening of the spectral absorption range. As a result, the photocatalytic performances obviously improved. Wang
et al. prepared homogeneous porous BiOBr microsphere photocatalysts doped with Ag
+ and Er
3+ ions separately [
75]. The diffusion of Ag into the BiOBr lattice led to the formation of the Schottky potential barrier, thereby spontaneously moving the photogenerated electrons toward Ag. The photogenerated electrons and holes became effectively separated, forming numerous holes on the catalyst surface, and thereby effectively improving the photocatalytic performances. On the other hand, Er
3+ doping had also been used to increase the energy level of BiOBr, resulting in large numbers of photogenerated electrons and effective inhibition of recombined photogenerated electrons and holes. After capturing electrons from CB of BiOBr, Er
3+ reduced doped Er
3+ ions into Er
2+. Since Er
2+ is unstable, it can easily release captured electrons to participate in the photocatalytic reaction. Consequently, Er
3+ showed up-conversion performances. The existence of numerous new energy levels effectively improved the photocatalytic efficiencies. For example, Guo
et al. prepared a Zn-doped BiOBr photocatalyst and noticed that doping of Zn can inhibit the recombination of photogenerated carriers [
76]. Meanwhile, the band gap of Zn-doped BiOBr widened in the potential of VBM (more positive) and CBM (more negative), leading to higher redox chemical potentials of photogenerated carriers. Lv
et al. prepared Cu-doped BiOBr photocatalyst by establishing the doped energy level in Cu-doped BiOBr bandgap [
52]. The electrons in VB of Cu-doped BiOBr were transferred to the Cu-doped BiOBr energy level through the inter conversion process between Cu
+ and Cu
2+. Meanwhile, electrons in the VB of Cu-doped BiOBr and Cu-doped levels were excited to CB of Cu-doped BiOBr. Compared to bulk BiOBr, more photogenerated holes were generated, thereby effectively improving the photocatalytic performances of BiOBr. An
et al. synthesized B-doped BiOBr nanosheets with unfilled electronic structure of B containing unpaired electrons as a good electron acceptor [
44]. The electron-deficient nature of B was beneficial for acquiring an extra electron from VB, which then can be excited into CB of BiOBr to leave one extra hole in VB of BiOBr. Therefore, the presence of B in semiconductors can improve the separation efficiency of BiOBr for electron holes. Compared to pure BiOBr, B-doped BiOBr displayed higher oxidation capacity.