The sensing mechanism of MXene composite mainly depends on the nature of its component materials and the interfacial interactions (such as Schottky junctions) between them. As for MXene/MOS, metal oxides, an important component of the composite, are divided into p-type and n-type semiconductors [
133]. The resistance changes of metal oxides are related to the type of semiconductors and target gases (oxidizing or reducing). For p-type semiconductors, such as NiO and CuO, oxidizing gases (electron-acceptor) decrease the resistance of semiconductors, while reducing gases increase the resistance of semiconductors [
134]. For n-type semiconductors, such as SnO
2 and ZnO, oxidizing gases (electron-acceptor) decrease the resistance of semiconductors, while reducing gases increase the resistance of semiconductors [
135]. Atomic vacancies, typically oxygen vacancies, are often constructed in metal oxides, which can provide more free electrons, act as active sites for adsorbing gas molecules and modify baseline resistance [
136]. The oxygen vacancies can be constructed by various methods, such as thermal reduction treatment, atomic doping, plasma etching and laser irradiation [
137–
140]. The thermal reduction treatment is relatively common in many researches, which can adjust the formation of oxygen vacancies and their concentration by controlling the relevant parameters (annealing temperature, annealing time, pressure, and atmosphere). The heterojunction and Schottky junction are often formed at the interface between MXene and metal oxides. For example, the work function of SnO
2 (~4.9 eV) is higher than that of Ti
3C
2T
x MXene (~3.9 eV), therefore, the electrons inject from Ti
3C
2T
x to SnO
2 [
141]. Then, an electron depletion layer with a negative zone is formed on SnO
2 side and the positive one is formed on the Ti
3C
2T
x MXene side, which means a built-in electric field created. The built-in electric field counters the transfer of electrons until the Fermi level equilibrates, leading to the formation of a Schottky junction. Thus, with the addition of MXene in SnO
2, heterostructures are formed, resulting in the creation of Schottky barriers. When MXene/SnO
2 is exposed to oxidizing gas, the electrophilic gas molecules absorb on the surface and capture electrons from the conduction band of the SnO
2. Subsequently, the built-in electric field will be destroyed and more electrons are transferred from MXene to SnO
2, which is contributed to the decrease of resistance. Meanwhile, the Schottky barrier height is also modulated by the surface chemisorbed gases. Generally, MXene, metal oxides and the synergistic enhancement effect (Schottky junctions) between them have combined to change the resistance of MXene/MOS. The gas sensing mechanism of other MXene composite has similar characteristics to that of MXene/MOS. Taking Ti
3C
2T
x/MoS
2 for example, 2H-MoS
2 is a ready-state semiconductor material, and Schottky junctions are also formed between composite materials [
142]. Similar to that of Ti
3C
2T
x/SnO
2, the change of resistance depends on the nature of Ti
3C
2T
x, MoS
2 and Schottky junctions between them.