Currently, a straightforward way to improve the catalytic properties is to transform 2H phase TMDs into metallic 1T or 1T′ phase TMDs
via phase engineering of nanomaterials [
59,
84]. For example, Lukowski
et al. reported that metallic 1T-MoS
2 could greatly improve the HER catalytic performance. They firstly synthesized 2H phase flower-like MoS
2 nanostructures with a high density of exposed edges directly on graphite substrates
via a simple chemical vapor deposition (CVD) method with molybdenum (V) chloride and sulfur powder as precursors. After that, they converted the multilayered semiconductive 2H-MoS
2 nanostructures into metallic 1T-MoS
2 by simply soaking them in
n–butyl lithium solution. It is found that 1T-MoS
2 exhibited facile electrode kinetics and low-loss electrical transport with a Tafel slope of 43 mV/dec. Importantly, the catalytic performance of 1T-MoS
2 nanosheets was stable and there was a less than 15% decay of electrocatalytic current density after 1000 cycles [
85]. Park
et al. adopted a scalable method to synthesize 1T phase MoS
2 via the molten-metal-assisted intercalation (MMI) approach, in which highly reactive molten potassium metal can intercalate into the MoS
2 interlayers to induce an efficient phase transition from the 2H to 1T crystal phase. Due to the high purity and stability of 1T phase, 1T-MoS
2 (MMI) gave a higher electrocatalytic performance for HER than 2H-MoS
2 [
20]. 1T′ phase which is different from the 2H and 1T structures presents different types of chalcogen atoms in the crystal space in terms of the positions, so the highly asymmetric 1T′ phase TMDs may result in different types of anionic vacancies. The vacancy can further induce the enhancement of catalytic performance and is in favor of exploiting its potential catalytic capacity. For instance, Yu
et al. presented a facile method for crystal phase-controlled synthesis of 1T′-MoX
2 crystals with the lateral size up to hundreds of micrometers. It is revealed that 1T′-MoS
2 crystals featured a distorted octahedral coordination structure and were convertible to 2H-MoS
2 following thermal annealing or laser irradiation. Electrochemical microcells with 1T′ or 2H-MoS
2 as the working electrode were fabricated (EM-1, EM-2 and EM-3). Compared to 2H-MoS
2, 1T′-MoS
2 (EM-1) showed higher efficiency for electrochemical HER with an onset overpotential of only 65 mV and a current density of 607 mA/cm
2 at an overpotential of 400 mV (
vs. RHE) (
Fig. 3). It is found that good HER performance of 1T′-MoS
2 originated from its higher catalytic activity on the basal plane, better charge transport ability and higher anionic vacancies [
86]. Since the surface energy in 1T/1T′ phase is relatively high, it is difficult to prepare MoS
2 with a pure unconventional phase. So it is necessary to tune the balance between 1T/1T′ unconventional phase and 2H pristine phase. For example, Zhang
et al. reported an efficient hydrothermal route to prepare 1T/2H-MoS
2 catalysts using ionic liquid (
n–butyl pyridinium bromide, [BPy]Br) as a structure-directing agent, where the large steric hindrance of [BPy]Br and mutual
π stacking interaction induced phase transition of MoS
2 from 2H to 1T phase. By adding a suitable amount of [BPy]Br in the reaction system, the percentage of 1T phase in 1T/2H-MoS
2 was increased, which can expose more active sites on its basal planes/edges as well as facilitate charge transfer for HER. 1T/2H-MoS
2 with 1T percentage of 91.9% exhibited a significantly enhanced HER activity as compared to MoS
2 synthesized without the aid of [BPy]Br [
67]. Wang
et al. adopted a hydrothermal method with the addition of ammonium bicarbonate to realize the fabrication
in-
situ of the 1T phase of MoS
2, in which ammonium bicarbonate was decomposed into small molecules and ions as guests (including NH
4+, H
2O and CO
2). These guests were inserted into the lamellar structures of MoS
2 to induce the formation of multiphasic 1T/2H-MoS
2 (
Fig. 4). The existence of 1T phase provided more active sites and better conductivity for HER, resulting in a superior HER performance with a small Tafel slope of 46 mV/dec. The integration with 2H phase was beneficial for stabilization of metastable 1T phase, ensuring excellent durability of 1T/2H-MoS
2 [
87]. Engineering crystal phase of MoS
2 to activate its basal planes/edges and simultaneously improve its electronic conductivity is another effective strategy for enhancing HER activity. For example, He
et al. adopted Au-quantum-dots (QDs)-assisted vapor-phase growth to fabricate wafer-size atomically thin TMD films (MoS
2,
etc.) with sub-10 nm grains which demonstrated an ultra-high-density grain boundaries (GBs) (up to ~1012 cm
−2). Experimental evidence as well as phase-field simulations indicated that the Au QDs regulated the formation of the TMD grains, resulting in enhanced electronic conductivity. This kind of MoS
2 nanograin film exhibited a superior HER performance with an onset potential of 25 mV and a Tafel slope of 54 mV/dec, indicating a good intrinsic activation of GB-rich 2D basal plane [
88].