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The problem of output voltage waveform oscillation in the 28 V radiation-resistant P-channel field effect transistor at a resistive load of 10.4 Ω was studied, and it was found that the main reason was the mismatch between the device's own parasitic parameters and the peripheral circuit parameters. To avoid this phenomenon, a circuit improvement solution was proposed, that is, the series resistance in the gate electrode reduces the VGS change rate and destroys the conditions for oscillation. At the same time, the clamp diode is added to the gate source electrode to ensure that the gate source voltage VGS is always lower than the rated value, so as to improve the safety of the circuit operation and long-term working reliability.
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针对28 V抗辐射P沟道场效应晶体管在阻性负载10.4 Ω时出现输出电压波形振荡的问题进行了研究,发现主要原因是器件自身寄生参数与外围电路参数的失配。为规避这一现象,提出了电路改进方案,即在栅极串联电阻以降低VGS变化速率,破坏振荡发生的条件;同时在栅源电极增加钳位二极管,确保栅源电压VGS始终低于额定值,以提升电路工作的安全性和长期可靠性。
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Waveform of the transient oscillation at the time of switch on(the switch can be turned on normally after short-term oscillation), figureFileSmall=SfCfM0J2xr3gWlObQVMPjg==, figureFileBig=PhLyxdshwWX38LgZIWe4pQ==, tableContent=null), ArticleFig(id=1239158377599783141, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图1, caption=
开启瞬间振荡波形(短时振荡后仍可正常开启), figureFileSmall=SfCfM0J2xr3gWlObQVMPjg==, figureFileBig=PhLyxdshwWX38LgZIWe4pQ==, tableContent=null), ArticleFig(id=1239158377788526835, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=EN, label=Fig. 2, caption=
Drive output waveform, figureFileSmall=h6mgEovfL5QWIIVkKQiLDQ==, figureFileBig=+fgCY4h2NZoub+r1SQGJiQ==, tableContent=null), ArticleFig(id=1239158377893384441, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图2, caption=
驱动输出波形, figureFileSmall=h6mgEovfL5QWIIVkKQiLDQ==, figureFileBig=+fgCY4h2NZoub+r1SQGJiQ==, tableContent=null), ArticleFig(id=1239158378023407874, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=EN, label=Fig. 3, caption=
Cross-section diagram of a P-channel VDMOS device, figureFileSmall=t1KSBjXVa9+NEaxsohrlvA==, figureFileBig=bfAQRNTUAZ7bC+4HB8mQWQ==, tableContent=null), ArticleFig(id=1239158378128265480, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图3, caption=
P沟VDMOS器件剖面示意图, figureFileSmall=t1KSBjXVa9+NEaxsohrlvA==, figureFileBig=bfAQRNTUAZ7bC+4HB8mQWQ==, tableContent=null), ArticleFig(id=1239158378199568652, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=EN, label=Fig. 4, caption=
Diagram of the startup process, figureFileSmall=I4eR+/asD2ru/VgKHazGQA==, figureFileBig=GDxq9yP4SvwiFUrpIOsb4Q==, tableContent=null), ArticleFig(id=1239158378283454737, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图4, caption=
开启过程示意图, figureFileSmall=I4eR+/asD2ru/VgKHazGQA==, figureFileBig=GDxq9yP4SvwiFUrpIOsb4Q==, tableContent=null), ArticleFig(id=1239158378371535129, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=EN, label=Fig. 5, caption=
Diagram of parasitic capacitance of P-channel MOSFET, figureFileSmall=VWGH2K5PNQ6kP4N3zfBmVA==, figureFileBig=F4pQhNHcABVc7b2ugviOlg==, tableContent=null), ArticleFig(id=1239158378451226909, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图5, caption=
P沟MOSFET寄生电容示意图, figureFileSmall=VWGH2K5PNQ6kP4N3zfBmVA==, figureFileBig=F4pQhNHcABVc7b2ugviOlg==, tableContent=null), ArticleFig(id=1239158378530918688, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=EN, label=Fig. 6, caption=
Model diagram of P-channel MOSFET parasitic capacitance, figureFileSmall=TDOLxflvkR0QfM9wA7m5XA==, figureFileBig=YY/Jyv4ZeiW0xc96ueg8Og==, tableContent=null), ArticleFig(id=1239158378614804776, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图6, caption=
P沟MOSFET寄生电容模型图, figureFileSmall=TDOLxflvkR0QfM9wA7m5XA==, figureFileBig=YY/Jyv4ZeiW0xc96ueg8Og==, tableContent=null), ArticleFig(id=1239158378715468080, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=EN, label=Fig. 7, caption=
Equivalent circuit diagram, figureFileSmall=n9b+vYzYeo4kkuQ3sK6XsA==, figureFileBig=X5/FAqR3ddcErvHAdvRAxw==, tableContent=null), ArticleFig(id=1239158378795159859, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图7, caption=
等效线路图, figureFileSmall=n9b+vYzYeo4kkuQ3sK6XsA==, figureFileBig=X5/FAqR3ddcErvHAdvRAxw==, tableContent=null), ArticleFig(id=1239158378887434554, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=EN, label=Fig. 8, caption=
Equivalent circuit diagram at the parasitic oscillation frequency, figureFileSmall=544qvZUZVRQNS2PyUAtD0A==, figureFileBig=ZQolbHrmhyEX6hgjN4R36A==, tableContent=null), ArticleFig(id=1239158378992292158, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图8, caption=
寄生振荡频率下的等效线路图, figureFileSmall=544qvZUZVRQNS2PyUAtD0A==, figureFileBig=ZQolbHrmhyEX6hgjN4R36A==, tableContent=null), ArticleFig(id=1239158379109732675, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=EN, label=Fig. 9, caption=
Equivalent circuit diagram, figureFileSmall=295UZl/2JoI3PHwNFLD+wQ==, figureFileBig=/edbJNfarSSmT5oCcutI4A==, tableContent=null), ArticleFig(id=1239158379189424454, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图9, caption=
等效线路, figureFileSmall=295UZl/2JoI3PHwNFLD+wQ==, figureFileBig=/edbJNfarSSmT5oCcutI4A==, tableContent=null), ArticleFig(id=1239158379285893453, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=EN, label=Fig. 10, caption=
Equivalent circuit at the resonant frequency, figureFileSmall=R/L1Hyb13/HAHW0+t0LScA==, figureFileBig=LekIKKz1GFkYR3GFBuGY5Q==, tableContent=null), ArticleFig(id=1239158379378168146, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, language=CN, label=图10, caption=
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