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The problem of output voltage waveform oscillation in the 28 V radiation-resistant P-channel field effect transistor at a resistive load of 10.4 Ω was studied, and it was found that the main reason was the mismatch between the device's own parasitic parameters and the peripheral circuit parameters. To avoid this phenomenon, a circuit improvement solution was proposed, that is, the series resistance in the gate electrode reduces the VGS change rate and destroys the conditions for oscillation. At the same time, the clamp diode is added to the gate source electrode to ensure that the gate source voltage VGS is always lower than the rated value, so as to improve the safety of the circuit operation and long-term working reliability.

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针对28 V抗辐射P沟道场效应晶体管在阻性负载10.4 Ω时出现输出电压波形振荡的问题进行了研究,发现主要原因是器件自身寄生参数与外围电路参数的失配。为规避这一现象,提出了电路改进方案,即在栅极串联电阻以降低VGS变化速率,破坏振荡发生的条件;同时在栅源电极增加钳位二极管,确保栅源电压VGS始终低于额定值,以提升电路工作的安全性和长期可靠性。

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纪丙华 1992年生,硕士,工程师。

陆灵君 1984年生,硕士,高级工程师。

王志国 1991年生,硕士,工程师。

刘胜阳 1991年生,硕士,工程师。

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A recent review on silicon carbide power devices technologies[J]. Proceedings of the CSEE, 2020, 40(6): 1741-1753., articleTitle=A recent review on silicon carbide power devices technologies, refAbstract=null), Reference(id=1239158381332713846, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2017, volume=null, issue=null, pageStart=1, pageEnd=8, url=null, language=null, rfNumber=[2], rfOrder=2, authorNames=SATHIK M H M, POU J, PRASANTH S, journalName=null, refType=null, unstructuredReference=SATHIK M H M, POU J, PRASANTH S, et al. Comparison of IGBT junction temperature measurement and estimation methods: A review[C]//2017 Asian Conference on Energy, Power and Transportation Electrification(ACEPT).2017: 1-8., articleTitle=Comparison of IGBT junction temperature measurement and estimation methods: A review, refAbstract=null), Reference(id=1239158381412405631, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2007, volume=22, issue=4, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[3], rfOrder=3, authorNames=LIU Q, WANG S, BAISDEN A C, journalName=IEEE Transactions on Power Electronics, refType=null, unstructuredReference=LIU Q, WANG S, BAISDEN A C, et al. EMI suppression in voltage source converters by utilizing DC-link decoupling capacitors[J]. IEEE Transactions on Power Electronics, 2007, 22(4): 1417., articleTitle=EMI suppression in voltage source converters by utilizing DC-link decoupling capacitors, refAbstract=null), Reference(id=1239158381508874629, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2014, volume=8, issue=3, pageStart=17, pageEnd=27, url=null, language=null, rfNumber=[4], rfOrder=4, authorNames=BAKER N, LISERRE M, DUPONT L, journalName=IEEE Industrial Electronics Magazine, refType=null, unstructuredReference=BAKER N, LISERRE M, DUPONT L, et al. Improved reliability of power modules: A review of online junction temperature measurement methods[J]. IEEE Industrial Electronics Magazine, 2014, 8(3): 17-27., articleTitle=Improved reliability of power modules: A review of online junction temperature measurement methods, refAbstract=null), Reference(id=1239158381588566410, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2015, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[5], rfOrder=5, authorNames=朱圣杰, journalName=null, refType=null, unstructuredReference=朱圣杰. 中小功率开关电源的浪涌电流抑制及辅助电源研究[D]. 苏州: 苏州大学, 2015., articleTitle=中小功率开关电源的浪涌电流抑制及辅助电源研究, refAbstract=null), Reference(id=1239158381693424018, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2015, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[5], rfOrder=6, authorNames=ZHU Shengjie, journalName=null, refType=null, unstructuredReference=ZHU Shengjie. Study of inrush current limitation and auxiliary power control system for small and medium-power power supply[D]. Suzhou: Suzhou University, 2015., articleTitle=Study of inrush current limitation and auxiliary power control system for small and medium-power power supply, refAbstract=null), Reference(id=1239158381794087321, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2017, volume=37, issue=9, pageStart=2686, pageEnd=2694, url=null, language=null, rfNumber=[6], rfOrder=7, authorNames=祝冲冲, 王祥, 罗皓泽, journalName=中国电机工程学报, refType=null, unstructuredReference=祝冲冲, 王祥, 罗皓泽, 等. 基于热敏感电参数法的大容量IGBT模块动态结温在线检测研究[J]. 中国电机工程学报, 2017, 37(9): 2686-2694., articleTitle=基于热敏感电参数法的大容量IGBT模块动态结温在线检测研究, refAbstract=null), Reference(id=1239158381894750625, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2017, volume=37, issue=9, pageStart=2686, pageEnd=2694, url=null, language=null, rfNumber=[6], rfOrder=8, authorNames=ZHU Chongchong, WANG Xiang, LUO Haoze, journalName=Proceedings of the CSEE, refType=null, unstructuredReference=ZHU Chongchong, WANG Xiang, LUO Haoze, et al. Dynamical junction temperature online extraction with thermal sensitive electrical parameters for high power IGBT modules[J]. Proceedings of the CSEE, 2017, 37(9): 2686-2694., articleTitle=Dynamical junction temperature online extraction with thermal sensitive electrical parameters for high power IGBT modules, refAbstract=null), Reference(id=1239158381982831015, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2019, volume=43, issue=7, pageStart=1216, pageEnd=1218, url=null, language=null, rfNumber=[7], rfOrder=9, authorNames=姜东升, 邱羽玲, journalName=电源技术, refType=null, unstructuredReference=姜东升, 邱羽玲. 基于MOSFET器件的开机浪涌电流抑制电路设计[J]. 电源技术, 2019, 43(7): 1216-1218., articleTitle=基于MOSFET器件的开机浪涌电流抑制电路设计, refAbstract=null), Reference(id=1239158382083494319, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2019, volume=43, issue=7, pageStart=1216, pageEnd=1218, url=null, language=null, rfNumber=[7], rfOrder=10, authorNames=JIANG Dongsheng, QIU Yuling, journalName=Chinese Journal of Power Source, refType=null, unstructuredReference=JIANG Dongsheng, QIU Yuling. Design of suppression circuit for inrush current based on MOSFET[J]. Chinese Journal of Power Source, 2019, 43(7): 1216-1218., articleTitle=Design of suppression circuit for inrush current based on MOSFET, refAbstract=null), Reference(id=1239158382154797495, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2018, volume=54, issue=4, pageStart=3453, pageEnd=3462, url=null, language=null, rfNumber=[8], rfOrder=11, authorNames=STELLA F, PELLEGRINO G, ARMANDO E, journalName=IEEE Transaction on Industry Applications, refType=null, unstructuredReference=STELLA F, PELLEGRINO G, ARMANDO E, et al. Online junction temperature estimation of SiC power MOSFETs through on-state voltage mapping[J]. IEEE Transaction on Industry Applications, 2018, 54(4): 3453-3462., articleTitle=Online junction temperature estimation of SiC power MOSFETs through on-state voltage mapping, refAbstract=null), Reference(id=1239158382251266498, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2021, volume=10, issue=5, pageStart=4965, pageEnd=4980, url=null, language=null, rfNumber=[9], rfOrder=12, authorNames=MOCEVIC S, MITROVIC V, WANG J, journalName=IEEE Journal of Emerging and Selected Topics in Power Electronics, refType=null, unstructuredReference=MOCEVIC S, MITROVIC V, WANG J, et al. Gate-driver integrated junction temperature estimation of SiC MOSFET modules[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021, 10(5): 4965-4980., articleTitle=Gate-driver integrated junction temperature estimation of SiC MOSFET modules, refAbstract=null), Reference(id=1239158382360318409, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2020, volume=51, issue=2, pageStart=60, pageEnd=64, url=null, language=null, rfNumber=[10], rfOrder=13, authorNames=邱燕, 王斌, 黎颖, journalName=航空电子技术, refType=null, unstructuredReference=邱燕, 王斌, 黎颖. 一种机载电源浪涌电流抑制电路的设计与分析[J]. 航空电子技术, 2020, 51(2): 60-64., articleTitle=一种机载电源浪涌电流抑制电路的设计与分析, refAbstract=null), Reference(id=1239158382473564621, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2020, volume=51, issue=2, pageStart=60, pageEnd=64, url=null, language=null, rfNumber=[10], rfOrder=14, authorNames=QIU Yan, WANG Bin, LI Ying, journalName=Avionics Technology, refType=null, unstructuredReference=QIU Yan, WANG Bin, LI Ying. Design and analysis of the circuit for airborne suppressing inrush current[J].Avionics Technology, 2020, 51(2): 60-64., articleTitle=Design and analysis of the circuit for airborne suppressing inrush current, refAbstract=null), Reference(id=1239158382582616532, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2020, volume=36, issue=4, pageStart=3757, pageEnd=3768, url=null, language=null, rfNumber=[11], rfOrder=15, authorNames=JIANG X, WANG J, YU H, journalName=IEEE Transaction.on Power Electronics, refType=null, unstructuredReference=JIANG X, WANG J, YU H, et al. Online junction temperature measurement for SiC MOSFET based on dynamic threshold voltage extraction[J]. IEEE Transaction.on Power Electronics, 2020, 36(4): 3757-3768., articleTitle=Online junction temperature measurement for SiC MOSFET based on dynamic threshold voltage extraction, refAbstract=null), Reference(id=1239158382662308313, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2020, volume=40, issue=18, pageStart=5742, pageEnd=5750, url=null, language=null, rfNumber=[12], rfOrder=16, authorNames=张擎昊, 张品佳, journalName=中国电机工程学报, refType=null, unstructuredReference=张擎昊, 张品佳. 一种基于门极电压阈值检测的SiC MOSFET结温在线监测方法[J]. 中国电机工程学报,2020, 40(18): 5742-5750., articleTitle=一种基于门极电压阈值检测的SiC MOSFET结温在线监测方法, refAbstract=null), Reference(id=1239158382762971615, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2020, volume=40, issue=18, pageStart=5742, pageEnd=5750, url=null, language=null, rfNumber=[12], rfOrder=17, authorNames=ZHANG Qinghao, ZHANG Pinjia, journalName=Proceedings of the CSEE, refType=null, unstructuredReference=ZHANG Qinghao, ZHANG Pinjia. A novel online method for monitoring the junction temperature of SiC MOSFET based on threshold voltage[J]. Proceedings of the CSEE, 2020, 40(18): 5742-5750., articleTitle=A novel online method for monitoring the junction temperature of SiC MOSFET based on threshold voltage, refAbstract=null), Reference(id=1239158382842663394, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2018, volume=null, issue=null, pageStart=2296, pageEnd=2300, url=null, language=null, rfNumber=[13], rfOrder=18, authorNames=YANG H C, SIMANJORANG R, SEE K Y, journalName=null, refType=null, unstructuredReference=YANG H C, SIMANJORANG R, SEE K Y. A method for junction temperature estimation utilizing turn-on saturation current for SiC MOSFET[C]//2018 International Power Electronics Conference. 2018: 2296-2300., articleTitle=A method for junction temperature estimation utilizing turn-on saturation current for SiC MOSFET, refAbstract=null), Reference(id=1239158382981075433, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2021, volume=9, issue=5, pageStart=6408, pageEnd=6423, url=null, language=null, rfNumber=[14], rfOrder=19, authorNames=NI Z, ZHENG S, CHINTHAVALI M S, journalName=IEEE Journal of Emerging and Selected Topics in Power Electronics, refType=null, unstructuredReference=NI Z, ZHENG S, CHINTHAVALI M S, et al. Investigation of dynamic temperature-sensitive electrical parameters for medium-voltage SiC and Si devices[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021, 9(5): 6408-6423., articleTitle=Investigation of dynamic temperature-sensitive electrical parameters for medium-voltage SiC and Si devices, refAbstract=null), Reference(id=1239158383199179245, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2016, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[15], rfOrder=20, authorNames=比林斯, 莫瑞, 张占松, 汪仁煌, 谢丽萍, journalName=精通开关电源设计, refType=null, unstructuredReference=比林斯, 莫瑞. 精通开关电源设计[M]. 3版. 张占松, 汪仁煌, 谢丽萍, 等, 译. 北京: 人民邮政出版社, 2016., articleTitle=null, refAbstract=null), Reference(id=1239158383312425458, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2022, volume=8, issue=4, pageStart=4607, pageEnd=4621, url=null, language=null, rfNumber=[16], rfOrder=21, authorNames=CHENG S, HU Y, XIANG C, journalName=IEEE Transaction on Transportation Electrification, refType=null, unstructuredReference=CHENG S, HU Y, XIANG C, et al. An online condition monitor method for IGBT independent of collector current[J]. IEEE Transaction on Transportation Electrification, 2022, 8(4): 4607-4621., articleTitle=An online condition monitor method for IGBT independent of collector current, refAbstract=null), Reference(id=1239158383408894455, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2018, volume=34, issue=8, pageStart=7922, pageEnd=7932, url=null, language=null, rfNumber=[17], rfOrder=22, authorNames=ZHANG Z, DYER J, WU X, journalName=IEEE Transaction on Power Electronics, refType=null, unstructuredReference=ZHANG Z, DYER J, WU X, et al. Online junction temperature monitoring using intelligent gate drive for SiC power devices[J]. IEEE Transaction on Power Electronics, 2018, 34(8): 7922-7932., articleTitle=Online junction temperature monitoring using intelligent gate drive for SiC power devices, refAbstract=null), Reference(id=1239158383480197628, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2007, volume=20, issue=6, pageStart=158, pageEnd=165, url=null, language=null, rfNumber=[18], rfOrder=23, authorNames=NEAMEN D, SHEDD W, BUCHANAN B, journalName=IEEE Transactions on Nuclear Science, refType=null, unstructuredReference=NEAMEN D, SHEDD W, BUCHANAN B. Permanent ionizing radiation effects in dielectrically bounded field effect transistors[J]. IEEE Transactions on Nuclear Science, 2007, 20(6): 158-165., articleTitle=Permanent ionizing radiation effects in dielectrically bounded field effect transistors, refAbstract=null), Reference(id=1239158383585055233, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2012, volume=null, issue=null, pageStart=3950, pageEnd=3955, url=null, language=null, rfNumber=[19], rfOrder=24, authorNames=ZHANG Z, ZHANG W, WANG F, journalName=null, refType=null, unstructuredReference=ZHANG Z, ZHANG W, WANG F, et al. Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration[C]//2012 IEEE Energy Conversion Congress and Exposition. 2012: 3950-3955., articleTitle=Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration, refAbstract=null), Reference(id=1239158383765410316, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2013, volume=14, issue=1, pageStart=220, pageEnd=228, url=null, language=null, rfNumber=[20], rfOrder=25, authorNames=CHEN H, JI B, PICKERT V, journalName=IEEE Transaction on Device and Materials Reliability, refType=null, unstructuredReference=CHEN H, JI B, PICKERT V, et al. Real-time temperature estimation for power MOSFETs considering thermal aging effects[J]. IEEE Transaction on Device and Materials Reliability, 2013, 14(1): 220-228., articleTitle=Real-time temperature estimation for power MOSFETs considering thermal aging effects, refAbstract=null), Reference(id=1239158383857685008, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2014, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[21], rfOrder=26, authorNames=HORIGUCHI T, KINOUCHI S I, NAKAYAMA Y, journalName=null, refType=null, unstructuredReference=HORIGUCHI T, KINOUCHI S I, NAKAYAMA Y, et al.A short circuit protection method based on a gate charge characteristic [C] // IEEE IPEC ECCE-ASIA. Hiroshima, Japan. 2014., articleTitle=A short circuit protection method based on a gate charge characteristic, refAbstract=null), Reference(id=1239158383966736917, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2013, volume=null, issue=null, pageStart=1, pageEnd=10, url=null, language=null, rfNumber=[22], rfOrder=27, authorNames=SUNDARAMOORTHY V, BIANDA E, BLOCH R, journalName=null, refType=null, unstructuredReference=SUNDARAMOORTHY V, BIANDA E, BLOCH R, et al. Online estimation of IGBT junction temperature (Tj)using gate-emitter voltage (Vge) at turn-off [C] // 15th EPE. Lille, France. 2013: 1-10., articleTitle=Online estimation of IGBT junction temperature (Tj)using gate-emitter voltage (Vge) at turn-off, refAbstract=null), Reference(id=1239158384063205915, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2015, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[23], rfOrder=28, authorNames=ZHANG X Y, CHEN M, ZHU N, journalName=null, refType=null, unstructuredReference=ZHANG X Y, CHEN M, ZHU N, et al. A self-adaptive blanking circuit for IGBT short-circuit protection based on VCE measurement [C] // IEEE ECCE. Montreal, QC,Canada. 2015., articleTitle=A self-adaptive blanking circuit for IGBT short-circuit protection based on VCE measurement, refAbstract=null), Reference(id=1239158385577349666, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2019, volume=19, issue=1, pageStart=242, pageEnd=244, url=null, language=null, rfNumber=[24], rfOrder=29, authorNames=XIE X, YANG Z, DENG M, journalName=IEEE Transactions on Device and Materials Reliability, refType=null, unstructuredReference=XIE X, YANG Z, DENG M, et al. P-Edge NMOSFET for improving TID tolerance[J]. IEEE Transactions on Device and Materials Reliability, 2019, 19(1): 242-244., articleTitle=P-Edge NMOSFET for improving TID tolerance, refAbstract=null), Reference(id=1239158385686401577, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, doi=null, pmid=null, pmcid=null, year=2006, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[25], rfOrder=30, authorNames=KLUG R D, KLAASSEN N, journalName=null, refType=null, unstructuredReference=KLUG R D, KLAASSEN N. High power medium voltage drives-innovations, portfolio, trends[C]//2005 European Conference on Power Electronics and Applications. IEEE, 2006., articleTitle=High power medium voltage drives-innovations, portfolio, trends, refAbstract=null)], funds=[Fund(id=1239158381051695463, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, awardId=2016YFB0501004, language=CN, fundingSource=科技部国家重点研发技术项目(2016YFB0501004), fundOrder=null, country=null)], companyList=[AuthorCompany(id=1239158373359341652, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, xref=null, ext=[AuthorCompanyExt(id=1239158373371924566, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239158368812716049, companyId=1239158373359341652, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Shanghai Aerospace Electronics Technology Research Institute, Shanghai 201109 , China), AuthorCompanyExt(id=1239158373380313175, tenantId=1146029695717560320, journalId=1238841944844054536, 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抗辐照MOSFET输出电压振荡机理研究
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纪丙华 , 陆灵君 , 王志国 , 刘胜阳
遥测遥控 | 测控通信与导航 2025,46(6): 53-58
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遥测遥控 | 测控通信与导航 2025, 46(6): 53-58
抗辐照MOSFET输出电压振荡机理研究
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纪丙华, 陆灵君, 王志国, 刘胜阳
作者信息
  • 上海航天电子技术研究所 上海 201109
  • 纪丙华 1992年生,硕士,工程师。

    陆灵君 1984年生,硕士,高级工程师。

    王志国 1991年生,硕士,工程师。

    刘胜阳 1991年生,硕士,工程师。

Research on the Oscillation Mechanism of Output Voltage of Radiation-hardened MOSFET
Binghua JI, LingJun LU, Zhiguo WANG, Shengyang LIU
Affiliations
  • Shanghai Aerospace Electronics Technology Research Institute, Shanghai 201109 , China
doi: 10.12347/j.ycyk.20250906001
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针对28 V抗辐射P沟道场效应晶体管在阻性负载10.4 Ω时出现输出电压波形振荡的问题进行了研究,发现主要原因是器件自身寄生参数与外围电路参数的失配。为规避这一现象,提出了电路改进方案,即在栅极串联电阻以降低VGS变化速率,破坏振荡发生的条件;同时在栅源电极增加钳位二极管,确保栅源电压VGS始终低于额定值,以提升电路工作的安全性和长期可靠性。

MOSFET  /  电压振荡  /  米勒效应  /  机理  /  可靠性  /  抗辐照  /  振荡抑制

The problem of output voltage waveform oscillation in the 28 V radiation-resistant P-channel field effect transistor at a resistive load of 10.4 Ω was studied, and it was found that the main reason was the mismatch between the device's own parasitic parameters and the peripheral circuit parameters. To avoid this phenomenon, a circuit improvement solution was proposed, that is, the series resistance in the gate electrode reduces the VGS change rate and destroys the conditions for oscillation. At the same time, the clamp diode is added to the gate source electrode to ensure that the gate source voltage VGS is always lower than the rated value, so as to improve the safety of the circuit operation and long-term working reliability.

MOSFET  /  Voltage oscillation  /  Miller effect  /  Mechanism  /  Reliability  /  Radiation-hardened  /  Oscillation suppression
纪丙华, 陆灵君, 王志国, 刘胜阳. 抗辐照MOSFET输出电压振荡机理研究. 遥测遥控, 2025 , 46 (6) : 53 -58 . DOI: 10.12347/j.ycyk.20250906001
Binghua JI, LingJun LU, Zhiguo WANG, Shengyang LIU. Research on the Oscillation Mechanism of Output Voltage of Radiation-hardened MOSFET[J]. Journal of Telemetry, Tracking and Command, 2025 , 46 (6) : 53 -58 . DOI: 10.12347/j.ycyk.20250906001
抗辐照MOSFET器件在航天电子系统、核电站控制电路及高能物理实验装置等极端辐照环境中广泛应用。与常规器件相比,抗辐照MOSFET通过采取一系列优化措施使器件能够在大电流条件下维持正常工作,避免发生灾难性失效[1,2]。然而,这类器件在开关过程中仍然面临米勒效应(Miller Effect)的严峻挑战,尤其是在重负载情况下,器件开关瞬态过程中,栅源电压更容易通过负反馈机制形成栅极电压平台(米勒平台),从而显著延长开关时间,增加开关损耗,甚至可能引发寄生导通和电磁干扰等一系列问题[3]
在太空辐射环境中,米勒效应的危害被进一步放大:电离粒子(如γ射线、质子、重离子等)的轰击会导致栅氧化层陷阱电荷积累和界面态密度升高,引起阈值电压漂移、跨导退化以及寄生电容参数的异常变化[4-8]。恶劣空间环境的影响加剧了米勒平台的不稳定性,若不采取措施将可能引发器件短路失效,甚至造成系统瘫痪[9-15]
当前,国内抗辐照高功率MOSFET使用场景不多、应用经验不足,与国外技术基础相比,存在较大差距[16,17]。最明显的表现是,抗辐照MOSFET器件在传统宇航领域使用电流需求大多局限于2 A以内,负载特性相对单一,应用场景较为简单[18-20],因此对匹配电路的要求较低。然而,随着宇航领域驱动负载产品的功能日益多元化、复杂化,对驱动电流的需求持续增长。面对等效阻值低、负载特性更加复杂多变的新情况,传统的器件应用方案逐渐难以满足使用要求,在大电流情况下器件与实际工作电路耦合导致输出电流振荡的米勒效应成了制约电路安全性和可靠性的关键因素。针对这一新情况,相关文献研究较少,大多数文献对器件底层设计和特性考核测试进行研究分析,很少关注和探讨大电流条件下米勒效应的成因及危害规避措施[21-25],导致产品研制生产技术人员缺少必要的理论参考。
本文旨在揭示米勒效应与实际电路工作条件的耦合机理,并提供电路改进方案,不仅关乎电路稳定性的提升,更直接影响到电子系统在极端环境下的生存能力与可靠性,以为产品开发应用提供理论支撑。
在抗辐射P沟道场效应晶体管(P沟MOSFET)器件使用过程中发现,当输入电压为28 V、负载阻值为15 Ω时,器件导通瞬间驱动电压输出波形出现振荡现象;此时,经过短时振荡后器件仍可正常开启,波形如图1所示。进一步观察栅源电压VGS波形,发现其在米勒平台附近同样出现振荡。
为了进一步分析负载阻值对MOSFET米勒效应的影响,选用阻值为10.4 Ω的负载进行测试,发现此时驱动电压输出波形振荡加剧,并且MOSFET已不能正常驱动输出,具体如图2所示,在器件整个开启过程(80 ms内)输出电压波形均存在振荡现象。进一步测试发现,当电流大于2.69 A时,类似应用电路普遍存在剧烈振荡现象,且短时间内无法自行消失。
抗辐照MOSFET这一输出电压振荡现象无论是对MOSFET器件本身的可靠性还是后级应用电路的安全性,都会产生一定负面影响,因此亟须对其产生机理进行分析,进而提出电路加固措施,降低或消除这一振荡现象带来的危害,提升产品可靠性和延长器件使用寿命。
P沟道抗辐照MOSFET采用抗辐射VDMOS(垂直双扩散金属氧化物半导体)工艺设计,器件剖面示意图如图3所示。该MOSFET器件工作时,在源漏端施加一定电压,当一个适当极性和大小的栅电压施加到栅极端时,在沟道区的表面便会感应形成P型反型层,在源漏电压电场的作用下反型层中载流子发生定向移动,即空穴从源极P+区通过P反型层流向P-区,再通过P+衬底流向漏极。空穴从P+源区流向P-区是平行于芯片表面横向流动;从P-区流向P+衬底的漏极是垂直于芯片表面流动。在源漏电压的作用下,载流子的定向移动即形成导通电流。即P沟道抗辐照VDMOS器件的工作原理实质上就是通过控制栅源电压控制源漏电流的导通。
常作为功率电路开关控制的MOSFET器件,可通过控制栅极电压的高低来控制器件的开启和关断。器件的导通过程通常包含以下四个阶段,具体如图4所示。
①开通延迟t0~t1:栅源负偏,栅源电压VGS低于阈值电压Vth时,栅源电压VGS开始为输入电容Ciss充电,此时栅极电流IG下降,器件仍然关断,漏源电压VDS不变。
②漏极电流ID上升过程t1~t2:当栅源电压VGS高于阈值电压Vth时,器件开始导通。漏极电流ID随着栅源电压VGS压差的增加而增大,漏源电压VDS逐渐减小。在沟道完全反型导通后,漏极电流ID达到最大值。
③漏源电压VDS下降过程t2~t3:栅源电容CGS基本充满,漏源电容CDS被沟道短路,此时主要是栅漏电容CGD充电,随着沟道导通,漏源电压VDS下降。因米勒效应,栅源电压VGS基本保持不变。
④栅源电压VGS下降时间t3~t4:沟道完全反型,米勒效应消失,栅源电压VGS恢复上升,栅极电流不断减少;栅源电压VGS升至栅极输入电压时,导通过程结束。
MOSFET器件由输入栅源电压VGS控制器件的开启程度,器件本身并无振荡特性,输出电压出现振荡的主要原因是器件自身寄生参数与外围电路参数不适配。
作为高功率电路中频繁使用的开关器件,P沟MOSFET在开关控制过程中,最重要的寄生参数是寄生电容。其涉及的寄生电容如图5所示。
从结构角度分析,寄生电容一般分为栅源电容Cgs、栅漏电容Cgd和漏源电容Cds。栅源电容Cgs和栅漏电容Cgd由MOS结构的绝缘层形成,漏源电容Cds为PN结电容。具体寄生电容模型如图6所示。
从应用角度分析,一般会用到三种电容,即输入电容Ciss、输出电容Coss和反向传输电容Crss。其与寄生电容关系如下:
其中:Cgd也叫米勒电容。
振荡是一种器件自身在没有外部电源提供振荡能量的情况下自身的电压和电流产生振动的一种现象。
电路产生振荡必须具备以下两个条件:
①相位条件:从输出到输入的反馈信号同相,即正反馈线路。
②幅度条件:线路中无源元件造成的损耗低于放大器的增益,即ReAH)≥1,A是放大电路增益,H是反馈网络反馈系数。
即当电路有正反馈并且提供增益足以补偿能量损耗时,即会发生振荡现象。
当功率MOSFET处于稳态或者关态时,因为跨导gm变成0或者非常小,不足以发生寄生振荡。
当MOSFET工作在线性模式时,存在很大的传输跨导gm和寄生电容,因此,其与线电感和其他杂散电感(包括栅、源、漏之间的电感和内部外部连接线的电感等)可能会形成正反馈线路,当回路增益为1或者更大时,MOSFET即会进入寄生振荡模式。
MOSFET器件工作电路的等效线路图如图7所示。其中LS1LS2是电源与地之间的寄生电感,C3为等效电容。在寄生振荡频率下,C3的阻抗很小,可以认为是短路,此时产生寄生振荡的线路等效图如图8所示。
LS1LS2大时,栅极等效于连接到漏极而不是源极,此时可等效成图9所示。
谐振线路1由L1Cgd组成,在谐振频率下呈感性;谐振线路2由CdsLS组成,在谐振频率下呈容性。因此,图9的线路可以再次等效,会形成考毕兹振荡器(Colpitts Oscillator),如图10所示。
当形成考毕兹振荡器,回路增益为1或者更大时,线路即会进入自激振荡,即自激振荡条件为:
即当gmCgs/(C4×R3)时,会发生振荡。其中C4实际上就是漏源电容Cds,替代后即为gmCgs/(Cds×R3),当满足这个条件时,会发生寄生振荡。需要注意的是,gm可能会随负载的变化而变化,栅极电压不变,漏极电流变化时,gm会变化,进而导致振荡幅度也会改变。
通过对寄生振荡产生的机理分析,当满足gmCgs/(Cds×R3)时,会发生寄生振荡,其中Cgs/Cds是器件本身的固有寄生特性,可以认为是恒定值。器件的跨导gm=ΔIDVgs,漏极电流的大小对跨导影响巨大,直接影响着是否满足振荡条件。当gm恒定时,减小负载电阻R3会抑制振荡情况,但是减小R3会增大负载电流,从而引起gm增大,并且gm增大的影响要大于R3减小的影响,从而满足振荡条件。
当负载阻抗为阻性时,负载电流在负载回路中瞬态变化,负载电流越大,跨导越大,更容易产生寄生振荡。实测结果表明,当电源电压范围为25V ~ 31V,负载电阻15 Ω时,P沟MOSFET未发生振荡引起无法开启的现象,按照电源电压最大值31V计算,当负载电流小于2.06 A时不会发生振荡引起无法开启的现象。
当负载阻抗为感性时,由于感性负载的特性,负载电流会在负载回路中缓慢变化,在MOSFET充电过程中,漏极电流的缓慢增大会使MOSFET器件跨导缓慢增大,不容易达到寄生振荡条件,因此负载等效电感越大越不易发生寄生振荡。使用阻抗为12 Ω±0.5 Ω,电感值为10 mH~30 mH的负载进行测试,上电过程以及整个开启时间波形均不存在振荡,实测结果也符合上述分析。
振荡对器件本身的影响主要表现在栅源电压的振荡对器件功能和可靠性的影响。当栅源电压始终小于器件栅源电压额定值时,器件使用是安全的。若振荡发生时栅源电压超过额定值,即可能引起器件可靠性降低,严重的过压可能会引起器件失效。
根据上述分析,在其他条件不变的情况下,若使gm减小,则可降低或避免器件开启过程发生振荡现象的可能性,即在器件栅极串联一只阻值约为20 Ω的电阻,在器件开启过程中可有效降低VGS变化速率,从而使gm变小,避免器件产生振荡。同时,为使P沟MOSFET器件振荡发生时栅源电压始终低于额定值,可在器件的栅源端增加钳位二极管BWC111,以保证即使发生振荡也不会对器件栅极造成损伤。具体电路如图11所示。
针对P沟MOSFET负载电流大于2.69 A开启时发生电压振荡甚至不能正常工作的现象,进行了机理分析。发现寄生振荡产生的主要原因是器件自身寄生参数与外围线路参数失配。外部负载电感越小,负载越重,越容易发生振荡。为避免这一现象的发生,提出了在器件栅极串联一只适当阻值的电阻降低VGS变化速率,以破坏开启振荡发生的条件,同时在栅源电极增加钳位二极管避免栅源电压VGS高于最大额定值,以保证电路工作安全性和长期工作可靠性。
  • 科技部国家重点研发技术项目(2016YFB0501004)
参考文献 引证文献
排序方式:
[1]
盛况, 任娜, 徐弘毅. 碳化硅功率器件技术综述与展望[J]. 中国电机工程学报, 2020, 40(6): 1741-1753.
SHENG Kuang, REN Na, XU Hongyi. A recent review on silicon carbide power devices technologies[J]. Proceedings of the CSEE, 2020, 40(6): 1741-1753.
[2]
SATHIK M H M, POU J, PRASANTH S, et al. Comparison of IGBT junction temperature measurement and estimation methods: A review[C]//2017 Asian Conference on Energy, Power and Transportation Electrification(ACEPT).2017: 1-8.
[3]
LIU Q, WANG S, BAISDEN A C, et al. EMI suppression in voltage source converters by utilizing DC-link decoupling capacitors[J]. IEEE Transactions on Power Electronics, 2007, 22(4): 1417.
[4]
BAKER N, LISERRE M, DUPONT L, et al. Improved reliability of power modules: A review of online junction temperature measurement methods[J]. IEEE Industrial Electronics Magazine, 2014, 8(3): 17-27.
[5]
朱圣杰. 中小功率开关电源的浪涌电流抑制及辅助电源研究[D]. 苏州: 苏州大学, 2015.
ZHU Shengjie. Study of inrush current limitation and auxiliary power control system for small and medium-power power supply[D]. Suzhou: Suzhou University, 2015.
[6]
祝冲冲, 王祥, 罗皓泽, 等. 基于热敏感电参数法的大容量IGBT模块动态结温在线检测研究[J]. 中国电机工程学报, 2017, 37(9): 2686-2694.
ZHU Chongchong, WANG Xiang, LUO Haoze, et al. Dynamical junction temperature online extraction with thermal sensitive electrical parameters for high power IGBT modules[J]. Proceedings of the CSEE, 2017, 37(9): 2686-2694.
[7]
姜东升, 邱羽玲. 基于MOSFET器件的开机浪涌电流抑制电路设计[J]. 电源技术, 2019, 43(7): 1216-1218.
JIANG Dongsheng, QIU Yuling. Design of suppression circuit for inrush current based on MOSFET[J]. Chinese Journal of Power Source, 2019, 43(7): 1216-1218.
[8]
STELLA F, PELLEGRINO G, ARMANDO E, et al. Online junction temperature estimation of SiC power MOSFETs through on-state voltage mapping[J]. IEEE Transaction on Industry Applications, 2018, 54(4): 3453-3462.
[9]
MOCEVIC S, MITROVIC V, WANG J, et al. Gate-driver integrated junction temperature estimation of SiC MOSFET modules[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021, 10(5): 4965-4980.
[10]
邱燕, 王斌, 黎颖. 一种机载电源浪涌电流抑制电路的设计与分析[J]. 航空电子技术, 2020, 51(2): 60-64.
QIU Yan, WANG Bin, LI Ying. Design and analysis of the circuit for airborne suppressing inrush current[J].Avionics Technology, 2020, 51(2): 60-64.
[11]
JIANG X, WANG J, YU H, et al. Online junction temperature measurement for SiC MOSFET based on dynamic threshold voltage extraction[J]. IEEE Transaction.on Power Electronics, 2020, 36(4): 3757-3768.
[12]
张擎昊, 张品佳. 一种基于门极电压阈值检测的SiC MOSFET结温在线监测方法[J]. 中国电机工程学报,2020, 40(18): 5742-5750.
ZHANG Qinghao, ZHANG Pinjia. A novel online method for monitoring the junction temperature of SiC MOSFET based on threshold voltage[J]. Proceedings of the CSEE, 2020, 40(18): 5742-5750.
[13]
YANG H C, SIMANJORANG R, SEE K Y. A method for junction temperature estimation utilizing turn-on saturation current for SiC MOSFET[C]//2018 International Power Electronics Conference. 2018: 2296-2300.
[14]
NI Z, ZHENG S, CHINTHAVALI M S, et al. Investigation of dynamic temperature-sensitive electrical parameters for medium-voltage SiC and Si devices[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021, 9(5): 6408-6423.
[15]
比林斯, 莫瑞. 精通开关电源设计[M]. 3版. 张占松, 汪仁煌, 谢丽萍, 等, 译. 北京: 人民邮政出版社, 2016.
[16]
CHENG S, HU Y, XIANG C, et al. An online condition monitor method for IGBT independent of collector current[J]. IEEE Transaction on Transportation Electrification, 2022, 8(4): 4607-4621.
[17]
ZHANG Z, DYER J, WU X, et al. Online junction temperature monitoring using intelligent gate drive for SiC power devices[J]. IEEE Transaction on Power Electronics, 2018, 34(8): 7922-7932.
[18]
NEAMEN D, SHEDD W, BUCHANAN B. Permanent ionizing radiation effects in dielectrically bounded field effect transistors[J]. IEEE Transactions on Nuclear Science, 2007, 20(6): 158-165.
[19]
ZHANG Z, ZHANG W, WANG F, et al. Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration[C]//2012 IEEE Energy Conversion Congress and Exposition. 2012: 3950-3955.
[20]
CHEN H, JI B, PICKERT V, et al. Real-time temperature estimation for power MOSFETs considering thermal aging effects[J]. IEEE Transaction on Device and Materials Reliability, 2013, 14(1): 220-228.
[21]
HORIGUCHI T, KINOUCHI S I, NAKAYAMA Y, et al.A short circuit protection method based on a gate charge characteristic [C] // IEEE IPEC ECCE-ASIA. Hiroshima, Japan. 2014.
[22]
SUNDARAMOORTHY V, BIANDA E, BLOCH R, et al. Online estimation of IGBT junction temperature (Tj)using gate-emitter voltage (Vge) at turn-off [C] // 15th EPE. Lille, France. 2013: 1-10.
[23]
ZHANG X Y, CHEN M, ZHU N, et al. A self-adaptive blanking circuit for IGBT short-circuit protection based on VCE measurement [C] // IEEE ECCE. Montreal, QC,Canada. 2015.
[24]
XIE X, YANG Z, DENG M, et al. P-Edge NMOSFET for improving TID tolerance[J]. IEEE Transactions on Device and Materials Reliability, 2019, 19(1): 242-244.
[25]
KLUG R D, KLAASSEN N. High power medium voltage drives-innovations, portfolio, trends[C]//2005 European Conference on Power Electronics and Applications. IEEE, 2006.
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doi: 10.12347/j.ycyk.20250906001
  • 接收时间:2025-09-06
  • 首发时间:2026-03-13
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  • 收稿日期:2025-09-06
  • 修回日期:2025-09-26
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    上海航天电子技术研究所 上海 201109
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