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Article(id=1239133498880086060, tenantId=1146029695717560320, journalId=1238841944844054536, issueId=1239133496480953194, articleNumber=null, orderNo=null, doi=10.12347/j.ycyk.20250327001, pmid=null, cstr=32406.14.ycyk.20250327001, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1743004800000, receivedDateStr=2025-03-27, revisedDate=1744128000000, revisedDateStr=2025-04-09, acceptedDate=null, acceptedDateStr=null, onlineDate=1773362048120, onlineDateStr=2026-03-13, pubDate=1747238400000, pubDateStr=2025-05-15, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1773362048120, onlineIssueDateStr=2026-03-13, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1773362048120, creator=13701087609, updateTime=1773362048120, updator=13701087609, issue=Issue{id=1239133496480953194, tenantId=1146029695717560320, journalId=1238841944844054536, year='2025', volume='46', issue='3', pageStart='1', pageEnd='152', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1773362047547, creator=13701087609, updateTime=1773363045127, updator=13701087609, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1239137680697651401, tenantId=1146029695717560320, journalId=1238841944844054536, issueId=1239133496480953194, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1239137680697651402, tenantId=1146029695717560320, journalId=1238841944844054536, issueId=1239133496480953194, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=42, endPage=50, ext={EN=ArticleExt(id=1239133500276789304, articleId=1239133498880086060, tenantId=1146029695717560320, journalId=1238841944844054536, language=EN, title=Design of High-Precision MEMS Silicon Gyroscope Interface ASIC, columnId=1239133497370145646, journalTitle=Journal of Telemetry, Tracking and Command, columnName=Intelligent Sensor Technology, runingTitle=null, highlight=null, articleAbstract=

To meet the application requirements of inertial navigation, autonomous driving, and other fields, and to advance the development of micro-electromechanical systems (MEMS) silicon gyroscopes towards high precision, digitalization, and miniaturization, this paper presents the design and implementation of a MEMS silicon gyroscope interface ASIC with digital output, based on a 0.35 μm BCD process and a monolithic integration approach. A closed-loop drive scheme based on noise self-excitation is adopted, enabling the gyroscope to achieve harmonic vibration in the drive direction. The detection circuit uses a low-noise capacitive-to-voltage (C/V) conversion circuit to efficiently convert the small displacement signal into a voltage signal. Signal processing is performed using switched-capacitor phase-sensitive demodulation technology, combined with low-pass filtering, effectively suppressing noise interference and yielding a low-noise analog angular velocity output signal. To achieve the digital output of the silicon gyroscope's angular velocity, an integrated fourth-order feed-forward Sigma-Delta (ΣΔ) analog-to-digital converter (ADC) is designed to convert the analog angular velocity signal into a digital signal. The chip test results show that the dynamic range of the ΣΔ modulator reaches 110 dB, with a low-frequency noise floor of approximately -120 dB. The overall range of the gyroscope is ±200(°)/s, with a scale factor of 21 310 LSB/((°)/s), a nonlinearity of 178×10-6, bias instability of 0.259(°)/h, and angle random walk of 0.028 7(°)/√h. The chip area is 4.3 mm×4.3 mm. By using the integrated interface ASIC to replace the traditional PCB-level system, the system's integration is significantly improved, successfully meeting the miniaturization requirements for MEMS silicon gyroscopes and promot-ing their development in high-precision digital applications.

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为满足惯性导航、自动驾驶等领域的应用需求，实现微电子机械系统（MEMS）硅陀螺仪向高精度、数字化和微小型化的方向发展，本文基于0.35 μm BCD工艺（双极型-互补金属氧化物半导体-双扩散金属氧化物半导体工艺），采用单芯片集成方式，设计并实现了一款具有数字化输出的MEMS硅陀螺仪接口电路。采用基于噪声自激的闭环驱动方案，使陀螺仪在驱动方向上实现简谐振动。检测电路使用低噪声电容-电压（C/V）转换电路，将检测模态位移信号转换为电压信号。信号处理通过开关相敏解调技术进行精确解调，并结合低通滤波处理，有效抑制系统噪声，从而获得低噪声的模拟角速度输出信号。为了实现硅陀螺角速度的数字化输出，设计了集成的四阶全前馈Sigma-Delta （ΣΔ）模数转换器（ADC），将模拟角速度信号转换为数字信号。芯片测试结果表明：ΣΔ调制器的动态范围达到110 dB，低频噪底约为-120 dB。陀螺整机的量程为±200(°)/s，标度因数为21 310 LSB/（(°)/s）（最低有效位每度每秒），非线性误差为178×10-6，零偏不稳定性为0.259(°)/h，角度随机游走为0.028 7(°)/√h（度每平方根小时）。该芯片面积为4.3 mm×4.3 mm。通过采用单片集成的接口ASIC（专用集成电路）替代传统的PCB（印制电路板）板级系统，显著提高了系统集成度，成功满足了MEMS硅陀螺微小型化的需求，推动了其在高精度数字化应用中的发展。

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张欢　1994年生，博士研究生。

陈伟平　1966年生，教授，博士生导师。

张文博　1990年生，博士后。

王一行　1994年生，博士，助理工程师。

付强　1979年生，高级工程师，硕士生导师。

尹亮　1977年生，副教授，博士生导师。

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张欢　1994年生，博士研究生。

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张欢　1994年生，博士研究生。

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陈伟平　1966年生，教授，博士生导师。

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陈伟平　1966年生，教授，博士生导师。

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张文博　1990年生，博士后。

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张文博　1990年生，博士后。

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2微系统与微结构教育部重点实验室（哈尔滨工业大学） 哈尔滨 150001, bio={"content":"

王一行　1994年生，博士，助理工程师。

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王一行　1994年生，博士，助理工程师。

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付强　1979年生，高级工程师，硕士生导师。

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付强　1979年生，高级工程师，硕士生导师。

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尹亮　1977年生，副教授，博士生导师。

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尹亮　1977年生，副教授，博士生导师。

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Comparison of the performance of silicon gyroscope developed by research institutions

, figureFileSmall=null, figureFileBig=null, tableContent=
文献参考电科13所[24]东南大学[19]剑桥大学[25]ADI公司[26]本文
时间20222023202120172025
量程((°)/s)±500±150±60±250±200
标度因数-40 996.67 LSB/((°)/s)6.6 mV-21 310 LSB/((°)/s)
非线性度(×10-6)5087.33--178
角度随机游走((°)/√h)0.1470.560.0370.150.028 7
零偏不稳定性((°)/h)1.0522.710.952.50.259
电路形式FPGA分立PCB分立PCB分立ASICASIC
输出方式数字数字模拟数字模拟/数字
), ArticleFig(id=1239263580068040833, tenantId=1146029695717560320, journalId=1238841944844054536, articleId=1239133498880086060, language=CN, label=表1, caption=

国内外研究单位研制的硅陀螺整机性能对比

, figureFileSmall=null, figureFileBig=null, tableContent=
文献参考电科13所[24]东南大学[19]剑桥大学[25]ADI公司[26]本文
时间20222023202120172025
量程((°)/s)±500±150±60±250±200
标度因数-40 996.67 LSB/((°)/s)6.6 mV-21 310 LSB/((°)/s)
非线性度(×10-6)5087.33--178
角度随机游走((°)/√h)0.1470.560.0370.150.028 7
零偏不稳定性((°)/h)1.0522.710.952.50.259
电路形式FPGA分立PCB分立PCB分立ASICASIC
输出方式数字数字模拟数字模拟/数字
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高精度MEMS硅陀螺仪接口ASIC设计
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张欢 1 , 陈伟平 1, 2 , 张文博 1, 2 , 王一行 1, 2 , 付强 1, 2 , 尹亮 1, 2
遥测遥控 | 智能传感器技术 2025,46(3): 42-50
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遥测遥控 | 智能传感器技术 2025, 46(3): 42-50
高精度MEMS硅陀螺仪接口ASIC设计
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张欢1, 陈伟平1, 2, 张文博1, 2, 王一行1, 2, 付强1, 2, 尹亮1, 2
作者信息
  • 1哈尔滨工业大学MEMS中心 哈尔滨 150001
  • 2微系统与微结构教育部重点实验室（哈尔滨工业大学） 哈尔滨 150001

    • 张欢　1994年生，博士研究生。

    陈伟平　1966年生，教授，博士生导师。

    张文博　1990年生，博士后。

    王一行　1994年生，博士，助理工程师。

    付强　1979年生，高级工程师，硕士生导师。

    尹亮　1977年生，副教授，博士生导师。

Design of High-Precision MEMS Silicon Gyroscope Interface ASIC
Huan ZHANG1, Weiping CHEN1, 2, Wenbo ZHANG1, 2, Yixing WANG1, 2, Qiang FU1, 2, Liang YIN1, 2
Affiliations
  • 1.MEMS Center, Harbin Institute of Technology, Harbin 150001, China
  • 2.Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education ( Harbin Institute of Technology), Harbin 150001, China
出版时间: 2025-05-15 doi: 10.12347/j.ycyk.20250327001
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摘要
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为满足惯性导航、自动驾驶等领域的应用需求，实现微电子机械系统（MEMS）硅陀螺仪向高精度、数字化和微小型化的方向发展，本文基于0.35 μm BCD工艺（双极型-互补金属氧化物半导体-双扩散金属氧化物半导体工艺），采用单芯片集成方式，设计并实现了一款具有数字化输出的MEMS硅陀螺仪接口电路。采用基于噪声自激的闭环驱动方案，使陀螺仪在驱动方向上实现简谐振动。检测电路使用低噪声电容-电压（C/V）转换电路，将检测模态位移信号转换为电压信号。信号处理通过开关相敏解调技术进行精确解调，并结合低通滤波处理，有效抑制系统噪声，从而获得低噪声的模拟角速度输出信号。为了实现硅陀螺角速度的数字化输出，设计了集成的四阶全前馈Sigma-Delta （ΣΔ）模数转换器（ADC），将模拟角速度信号转换为数字信号。芯片测试结果表明：ΣΔ调制器的动态范围达到110 dB，低频噪底约为-120 dB。陀螺整机的量程为±200(°)/s，标度因数为21 310 LSB/（(°)/s）（最低有效位每度每秒），非线性误差为178×10-6，零偏不稳定性为0.259(°)/h，角度随机游走为0.028 7(°)/√h（度每平方根小时）。该芯片面积为4.3 mm×4.3 mm。通过采用单片集成的接口ASIC（专用集成电路）替代传统的PCB（印制电路板）板级系统，显著提高了系统集成度，成功满足了MEMS硅陀螺微小型化的需求，推动了其在高精度数字化应用中的发展。

MEMS  /  硅陀螺仪  /  接口ASIC  /  ΣΔ ADC  /  数字输出

To meet the application requirements of inertial navigation, autonomous driving, and other fields, and to advance the development of micro-electromechanical systems (MEMS) silicon gyroscopes towards high precision, digitalization, and miniaturization, this paper presents the design and implementation of a MEMS silicon gyroscope interface ASIC with digital output, based on a 0.35 μm BCD process and a monolithic integration approach. A closed-loop drive scheme based on noise self-excitation is adopted, enabling the gyroscope to achieve harmonic vibration in the drive direction. The detection circuit uses a low-noise capacitive-to-voltage (C/V) conversion circuit to efficiently convert the small displacement signal into a voltage signal. Signal processing is performed using switched-capacitor phase-sensitive demodulation technology, combined with low-pass filtering, effectively suppressing noise interference and yielding a low-noise analog angular velocity output signal. To achieve the digital output of the silicon gyroscope's angular velocity, an integrated fourth-order feed-forward Sigma-Delta (ΣΔ) analog-to-digital converter (ADC) is designed to convert the analog angular velocity signal into a digital signal. The chip test results show that the dynamic range of the ΣΔ modulator reaches 110 dB, with a low-frequency noise floor of approximately -120 dB. The overall range of the gyroscope is ±200(°)/s, with a scale factor of 21 310 LSB/((°)/s), a nonlinearity of 178×10-6, bias instability of 0.259(°)/h, and angle random walk of 0.028 7(°)/√h. The chip area is 4.3 mm×4.3 mm. By using the integrated interface ASIC to replace the traditional PCB-level system, the system's integration is significantly improved, successfully meeting the miniaturization requirements for MEMS silicon gyroscopes and promot-ing their development in high-precision digital applications.

MEMS  /  Silicon micro-gyroscope  /  Interface ASIC  /  ΣΔ ADC  /  Digital output
张欢, 陈伟平, 张文博, 王一行, 付强, 尹亮. 高精度MEMS硅陀螺仪接口ASIC设计. 遥测遥控, 2025 , 46 (3) : 42 -50 . DOI: 10.12347/j.ycyk.20250327001
Huan ZHANG, Weiping CHEN, Wenbo ZHANG, Yixing WANG, Qiang FU, Liang YIN. Design of High-Precision MEMS Silicon Gyroscope Interface ASIC[J]. Journal of Telemetry, Tracking and Command, 2025 , 46 (3) : 42 -50 . DOI: 10.12347/j.ycyk.20250327001
正文
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0　引言
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在导航与制导系统中，微电子机械系统(MEMS)硅陀螺仪凭借其体积小、功耗低及易于批量制造等优势，已成为高集成度导航系统中不可或缺的核心器件[1-3]。为进一步提升系统的整体性能与集成水平，对MEMS硅陀螺接口ASIC的设计与测试验证具有至关重要的意义。接口ASIC通常集成信号检测、模数转换、正交校正及数字输出等功能模块，可有效减少外部器件数量，提升信号处理的精度与系统的抗干扰能力[4,5]。随着集成电路技术的持续发展，实现接口ASIC高精度、低噪声和高集成度等关键性能指标[6,7]，能够促进MEMS硅陀螺仪系统向高性能、小型化和智能化方向发展。
1988年，美国Draper(德雷珀)实验室成功研制出首个双框架硅陀螺仪[8]。此后，凭借硅陀螺仪的诸多优势，如高集成度、高精度、批量生产等，迅速吸引了国内外众多研究机构的目光，使其投入大量资源开始进行研究，并在提升其整机性能方面取得了显著进展。目前，各研究机构在敏感结构和接口ASIC方面均取得不错的进展[9-11]。例如，2007年，佐治亚理工大学针对高品质因数的硅陀螺仪研制了一款接口ASIC，该ASIC采用T型跨阻放大器实现C/V转换，跨阻放大器具有低输出噪声，实现了0.02 aF/√Hz的电容分辨率[12]。2021年，米兰理工大学研制了一款低功耗的硅陀螺接口电路，该接口电路采用模拟闭环控制方案，接口电路包括驱动电路、检测电路及正交校正电路三个控制环路[13]。2024年，斯坦福大学研制了一款具备模态匹配功能的硅陀螺接口电路，实现了对驱动和检测谐振频率的动态匹配[14]。虽然我国硅陀螺仪的研究起步较晚，但近年来国内各研究机构在硅陀螺接口电路领域已取得了显著进展，其中绝大多数测控方案采用分立器件实现[15]，板级方案存在较大寄生电容及干扰，对系统性能影响较大。也有少数机构采用正向设计方法，实现了接口电路集成化设计。例如，2018年，哈尔滨工业大学提出了一种基于高频载波方案的硅陀螺仪模拟接口电路，有效抑制了寄生电容引起的耦合噪声及干扰[16]。2020年，苏州大学报道了一款基于FPGA的力平衡闭环控制系统，通过载波技术优化了硅陀螺仪输出的噪声性能，改善了系统的角度随机游走[17]。2022年，南京理工大学提出了一种基于数字域解调的接口ASIC设计方案，避免模拟相敏解调电路引入的1/f噪声[18]。2023年，东南大学报道了一款基于分时测控系统的硅陀螺仪，并对接口电路中前端模拟检测电路的误差进行分析和抑制[19]。
本文提出了一种具有片上正交校正及数字化输出的MEMS硅陀螺仪接口ASIC设计方案，实现了接口ASIC单片集成。设计了一种谐振器级联前馈(CIFF)结构的ΣΔ模数转换器，利用噪声整形及过采样技术，第一级积分器采用斩波技术降低了1/f噪声，有助于改善模数转换器的噪声性能，使得24 bit输出位数的模数转换器实现了18 bit的有效位数，满足了MEMS硅陀螺仪角速度数字化输出的需求。采用耦合刚度校正方法实现了硅陀螺仪正交误差实时校正，接口ASIC内部集成了正交校正电路与前端模拟电路、模数转换器电路，构成了MEMS硅陀螺仪测控系统，从而保证硅陀螺仪具备良好的整机性能。
1　MEMS硅陀螺仪系统架构概述
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1.1　硅陀螺仪敏感结构工作原理
图1为MEMS硅陀螺的敏感结构，主要包括质量块、驱动检测电极、驱动反馈电极、检测电极、检测反馈电极以及正交校正电极等部分。在硅陀螺驱动反馈电极上施加反馈电压使驱动轴结构谐振，驱动检测电极用于检测质量块在驱动轴方向上产生的位移变化[20]。当z轴有角速度输入时，在哥氏力作用下质量块在检测轴方向带动检测梳齿运动[21]。此外，通过检测框架设计了具有不等间距的梳齿电极，用于校正敏感结构存在的耦合刚度误差。
MEMS硅陀螺通过中心质量块实现简谐振动，进而驱动电极产生交变的电容[22,23]。当z轴方向输入角速度时，通过检测由哥氏力产生的检测轴位移变化来实现角速度的测量。当硅陀螺仪驱动方向施加的驱动力为Fdcos(ωt)时，其二阶运动方程可表示为：
式中，m为硅陀螺的质量，bx为驱动方向的阻尼系数，kx为驱动方向的刚度系数。当驱动力的谐振频率ω等于敏感结构的固有频率时，忽略驱动方向谐振位移的瞬态项，可得质量块的谐振位移表达式为：
当z轴方向输入的角速度为Ωz=Ωsin(ωit)时，根据哥氏力的原理，硅陀螺检测方向产生的哥氏力大小为，进一步可知硅陀螺检测方向上的运动位移方程可以表示为：
式中，by为检测方向的阻尼系数，ky为检测方向的刚度系数。当忽略检测方向位移的瞬态项时，由式(1)进一步可解得位移为：
式中，p为与敏感结构参数相关的参数。以驱动方向速度信号sin(ωdt)为解调信号，并经过低通滤波处理后可以得到输入角速度成正比的检测输出信号。
1.2　硅陀螺仪接口ASIC系统结构
图2展示了MEMS硅陀螺接口ASIC系统结构，主要由噪声自激闭环驱动电路、前级检测电路及高精度ΣΔ ADC和闭环正交校正电路三个核心模块组成。模拟驱动电路负责实现硅陀螺的闭环自激驱动，使中心质量块维持稳定的幅值自激谐振。前级检测电路包括低噪声C/V转换电路和用于角速度解调的相敏解调电路，经过低通滤波后输出角速度的模拟信号。ΣΔ ADC则将模拟角速度信号转换为数字输出。正交误差是影响MEMS硅陀螺检测精度的关键误差来源之一。采用正交刚度校正法能够有效抑制检测环路中的正交误差，同时避免解调参考信号带来的额外相移影响。为此，设计了闭环正交校正电路，该电路通过校正电压调整敏感结构中的正交误差，实现了对耦合刚度误差的实时动态校正。
本文设计的硅陀螺接口ASIC采用单芯片集成方式，将模拟电路与数字电路集成在同一芯片内，不仅提升了系统的集成度，还有效减少了因布线过长而产生的寄生效应和耦合干扰。
2　接口ASIC关键电路模块设计
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2.1　低噪声C/V转换电路设计
C/V转换电路由三个相同结构的放大器组成，能够实现前级低噪声电荷检测功能。该电路内部运放的晶体管级电路如图3所示。运放的前两级采用套筒式结构，以提高直流增益，并且采用全差分结构来减小运放的失调电压；第三级则采用共源级结构，以提升输出摆幅。同时，运放的输入端使用较大尺寸的差分PMOS(P沟道金属氧化物半导体场效应晶体管)，能够有效降低运放的1/f噪声。为了提高运放的稳定性并降低功耗，运放采用了跨导电容前馈补偿结构(TCFC)。通过在前馈补偿环路中引入电阻，从而引入左半平面零点，有效补偿了运放的相位裕度。
2.2　可变增益放大器设计
可变增益放大器将PI控制器输出信号与驱动环路电压信号进行模拟域放大，输入反馈模拟电压至驱动反馈电极，通过反馈的静电驱动力实现驱动环路自激谐振。该可变增益放大器具有非线性放大功能，可变增益放大器为驱动环路提供较大的环路增益，保证硅陀螺自激启动初期环路具有高的增益；当陀螺驱动位移信号接近目标值时，PI控制器输出电压逐渐减小，最后可变增益放大器提供单倍增益，保证驱动环路实现稳定幅值简谐振动。图4为本文设计的可变增益放大器晶体管级电路结构。
如图4所示，VPI为驱动环路PI控制器输出信号，Vin-和Vin+分别为可变增益放大器输入差分信号，Vout-和Vout+为可变增益放大器输出差分电压，Vref为设定目标电压值。为便于分析可变增益放大器工作原理，需要分析半边等效电路的小信号模型。陀螺自激启动初期，M1管处于线性区，I1支路可以看作一个源级负反馈的共源级电路，其等效跨导系数为：
进一步可知，M3、M4管的等效跨导系数和I1支路的小信号电流分别为：
由于辅助运放具有钳位作用，A点可认为是虚地，两个支路的电流相等，因此可知可变增益放大器输出电压Vout-可以表示为
2.3　高精度ΣΔ ADC设计
为了将解调后的模拟输出信号转化为数字信号，需要高精度ΣΔ ADC实现角速度数字化。ΣΔ ADC采用过采样和噪声整形技术可以实现高精度输出，解调后的角速度信号带宽较低，因此ΣΔ ADC相比于其他类型的ADC更适合硅陀螺系统角速度数字化。本文设计的ΣΔ ADC由ΣΔ调制器和数字抽取滤波器组成，其中ΣΔ调制器采用四阶全前馈结构，数字抽取滤波器包括三阶CIC(级联积分梳状)滤波器和二阶IIR(无限脉冲响应)滤波器级联组成，能够实现降采样和低通滤波功能。ΣΔ调制器作为ΣΔ ADC关键电路模块，其噪声性能直接影响到ADC的性能。本文采用四阶CIFF(级联积分前馈)低通ƩΔ调制器将模拟信号转化为数字信号，并对噪声进行四阶整形，图5所示为四阶CIFF结构ƩΔ调制器的信号流图。
由图5所示的ƩΔ调制器系统结构，可得四阶CIFF结构的ƩΔ调制器信号和噪声的传递函数为：
若令b1=c1，b4=1，理论上可使信号传递函数等于1。ƩΔ调制器信号传递函数得到了简化，使得电路易于实现。图6为设计的四阶全前馈结构的ΣΔ调制器，全前馈结构能够减少反馈环路，仅在ΣΔ调制器第一级输入节点引入反馈通路，能够降低运放的输出摆幅，有益于降低信号失真。ΣΔ调制器电路采用全差分的结构，能够抑制偶次谐波，并且具有较低的失调特点。硅陀螺解调后的角速度信号带宽通常小于200 Hz，属于低频率信号。因此，本文设计的ΣΔ调制器第一级积分器采用斩波技术来抑制低频1/f噪声，能够显著减小低频噪声。此外，相比级联型结构，该结构的ΣΔ调制器对加工工艺误差要求更低，同时采用单位码流量化结构能够减小比较器的数量，系统线性度更好，且易实现低功耗。
为验证低通ƩΔ调制器的系统性能，在Cadence仿真环境对ƩΔ调制器进行后仿真验证。将采集到的65 536个输出码流数据进行FFT(快速傅里叶变换)分析，图7为得到的ƩΔ调制器输出的功率谱密度图。陀螺谐振频率处的噪底约为-120 dB，同时四阶ƩΔ调制器实现了-80 dB/(°)的噪声整形功能。
2.4　片上正交校正电路设计
正交误差是影响MEMS陀螺仪整机性能的关键因素之一，常见的正交误差校正方法包括正交力校正法和耦合刚度校正法。其中，正交力校正法通过在检测环路施加静电力以抵消正交耦合力，从而实现正交误差校正。然而，该方法对解调信号的相位要求严格，系统适应性较差。相比之下，耦合刚度校正法能够实时校正敏感结构中存在的刚度误差，可以有效抑制由耦合刚度偏差引起的正交误差，系统具有更强的鲁棒性和环境适应性。因此，本文选用耦合刚度校正方法对MEMS硅陀螺仪进行正交误差补偿。在静电力驱动下，MEMS硅陀螺仪实现自激谐振。理想情况下，当z轴存在角速度输入时，检测环路只包含哥氏力信号。然而，在实际检测过程中，环路中仍存在同相误差与正交误差的耦合信号。为实现正交误差的有效校正，需设计相应的正交误差校正电路，以补偿由结构耦合刚度引起的误差项。为简化MEMS硅陀螺仪检测电路实现方案，本文采用开环检测方案。当存在角速度输入时，MEMS硅陀螺仪的检测模态将产生与角速度成正比的哥氏力信号，通过同相解调即可获得角速度信息。图8为MEMS硅陀螺仪的检测电路及正交误差校正电路的原理图。
3　硅陀螺测试与实验结果
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3.1　ΣΔ ADC性能测试
硅陀螺整机测试使用的测试板和接口ASIC芯片如图9所示，测试板分为上下两层结构，其中上层为MEMS硅陀螺敏感结构，通过转接板连接到硅陀螺PCB测试板上。下层为接口ASIC，ASIC通过打线压焊到测试板上，接口ASIC采用0.35 μm BCD工艺进行工程批流片加工，芯片面积为4.3 mm×4.3 mm，实现了硅陀螺系统小型化的设计目标。硅陀螺的供电电压为5 V，工作电流为18 mA，整机功耗为90 mW。
检测电路中ΣΔ调制器是实现角速度数字化的关键电路模块。ΣΔ调制器噪声性能将直接影响到硅陀螺的输出精度，因此，首先测试ΣΔ调制器的噪声性能。测试调制器时取下硅陀螺仪敏感结构PCB转接板，单独给接口ASIC测试板供电。将四阶调制器的输入端断开接中间电位；调制器上电后，输出单比特码流由逻辑分析仪采集至上位机，对采集到的65 536点1 bit码流做FFT分析，得到图10所示的低通ΣΔ调制器功率谱密度。由图10可知，低通ΣΔ调制器具备-80 dB/(°)的噪声整形能力，并且调制器输出低频噪底约为-120 dB，有效位数为18位。调制器测试结果表明：本文设计的四阶ΣΔ调制器性能良好，能够满足硅陀螺仪检测电路模/数转换所需精度。
3.2　硅陀螺整机性能测试
硅陀螺仪整机性能测试时，将硅陀螺仪固定在数控转台上，上位机通过SPI(串行外围接口)读出系统输出，分别对MEMS硅陀螺的标度因数、线性度及零偏不稳定性等整机性能进行测试。在室温25 ℃的条件下，将硅陀螺仪静置于转台上并通电，分别输入固定角速度±0.1(°)/s~±200(°)/s的激励信号。图11所示为硅陀螺仪的标度因数实测拟合曲线。在输入量程为±200(°)/s时，可以得到硅陀螺的标度因数为21 310 LSB/((°)/s)，非线性度为178×10-6。
对硅陀螺进行1 h常温稳定性测试，根据采集到的硅陀螺仪的输出零位数据计算Allan(阿伦)方差曲线。图12所示为硅陀螺仪Allan方差曲线，实验测试结果表明：本文设计MEMS硅陀螺接口ASIC实现了0.259(°)/h的零偏不稳定性和0.028 7(°)/√h的角度随机游走。
为验证本文研制的接口ASIC性能，并综合衡量硅陀螺整机的性能指标，表1将本文设计的高精度数字输出陀螺接口ASIC与近年来国内外一些研究单位研制的性能优异的硅陀螺整机进行了对比。由表1可见，与其他高性能硅陀螺仪相比，本文设计的接口ASIC能够实现高精度的数字输出信号，且其零偏不稳定性和角度随机游走均达到了较高的行业水平，在综合性能指标方面具有一定的优势。同时，该设计实现了接口电路单芯片高度集成，有助于MEMS硅陀螺仪的微小型化和产品化。
4　结论
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本文设计并工程批流片了一款高精度MEMS硅微陀螺仪接口ASIC，能够满足惯性导航、自动驾驶等高精度测量应用的需求。该接口电路基于0.35 μm BCD工艺，集成了噪声自激闭环驱动、检测电路、闭环正交校正电路及四阶ΣΔ ADC，实现了角速度的数字化输出。通过闭环驱动方案和低噪声电路设计，该陀螺仪能够在驱动方向上实现简谐振动，从而精确检测角速度并输出数字信号。实验结果表明：所设计的陀螺仪接口ASIC在±200(°)/s量程范围内，标度因数为2 1310 LSB/((°)/s)，非线性误差为178×10-6，零偏不稳定性为0.259(°)/h，角度随机游走为0.028 7(°)/√h。采用单芯片集成的接口ASIC替代传统PCB级系统，显著提高了硅陀螺仪系统的集成度，有助于促进MEMS硅陀螺仪在高精度数字化应用中的进一步发展。该接口ASIC不仅提升了陀螺仪的整机性能，还有效提升了集成度和微小型化，满足了中高精度工程应用的要求。
基金
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  • 国家重点研发计划(2022YFB3205403)
文献
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2025年第46卷第3期
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doi: 10.12347/j.ycyk.20250327001
  • 接收时间：2025-03-27
  • 首发时间：2026-03-13
  • 出版时间：2025-05-15
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  • 收稿日期：2025-03-27
  • 修回日期：2025-04-09
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国家重点研发计划(2022YFB3205403)
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    1哈尔滨工业大学MEMS中心 哈尔滨 150001
    2微系统与微结构教育部重点实验室（哈尔滨工业大学） 哈尔滨 150001
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2种不同金属材料的力学参数
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Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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