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Purpose: Dimensional tolerances in the flow-channel height of metallic interconnects are unavoidable during the manufacturing and assembly of solid oxide cell (SOC) stacks. Such tolerances can lead to non-uniform internal flow distribution and may threaten cell performance and long-term stability. This study aims to evaluate the effects of flow-channel height tolerance on the coupled electrical, flow, and mass-transfer behavior in single-layer and three-layer SOC stacks, and to provide a theoretical basis for rational tolerance specification. 

Methods: A coupled thermal–mass–electrical–chemical multiphysics model was developed for SOC stacks. The model integrates an electrochemical model with momentum, species, and energy conservation equations, allowing analysis of current density, gas-flow distribution, pressure drop, and temperature. For the single-layer stack, four flow-channel height profiles were considered: uniform height, random height, height decreasing toward both sides, and height increasing toward both sides. For the three-layer stack, two comparative cases were further examined: consistent layer heights (DN1) and inconsistent layer heights (DN2). All simulations were performed under constant-voltage operation at 0.8 V. Macroscopic and interfacial current-density distributions, gas distribution, fuel-channel pressure drop, interlayer voltage variation, and the coefficient of variation (CV) of gas flow were systematically compared. 

Results: For the single-layer stack, the difference in macroscopic current density among the four flow-channel height profiles was less than 0.5%, and the maximum relative deviation of the standard deviation of the interfacial current density was only 0.18%. This indicates that the current distribution was insensitive to flow-channel height tolerance within the studied range. However, further analysis of flow and mass transfer revealed hidden non-uniformity. Under all height-deviation scenarios, the fuel-side channel pressure drop increased by approximately 28.6% compared with the uniform case, indicating that the flow field was far more sensitive to height tolerance than the electrical performance. For the three-layer stack, the layer voltages in DN1 were nearly identical, with an interlayer voltage error of only 0.4% and a gas-flow CV of 1.8%, indicating excellent gas-distribution uniformity. In contrast, in DN2, complete hydrogen depletion occurred in the rear region of the top-layer flow channel, concentration polarization intensified, and the voltage decreased continuously; the interlayer voltage error reached 6.7%, and the gas-flow CV was 18.7%, indicating a highly non-uniform gas distribution. These results show that although the current distribution in a single cell is relatively tolerant of flow-channel height deviations, the flow and mass-transfer fields are strongly affected. In multilayer stacks, interlayer height inconsistency can lead to severe local fuel starvation and performance degradation. 

Conclusions: Within the range studied, the flow-channel height tolerance for single cells can be moderately relaxed to reduce manufacturing costs. However, interlayer dimensional consistency must be strictly controlled during stack assembly. The proposed coupled model and findings provide a theoretical basis for formulating reasonable manufacturing tolerances for SOC stacks.

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【目的】针对固体氧化物电池(SOC)电堆制造装配中金属连接体流道高度尺寸公差引发的内部流动非均匀性问题,评估其对单层及多层电堆性能与长期稳定性的影响,为公差合理设定提供依据。

【方法】本文构建热-质-电-化多场耦合数值模型,针对单层电堆设置流道均匀高度、随机高度、向两侧递减和向两侧递增四种分布,并对比三层电堆层间高度一致(DN1)与不一致(DN2)工况,在0.8 V恒压工况下分析电流、流动与传质特性。

【结果】单层电堆中,四种高度分布的宏观电流密度差异小于0.5%,界面电流密度标准差最大相对偏差仅0.18%,电流分布对高度公差不敏感;然而,进一步的流动与传质分析揭示了隐藏的不均匀性。与均匀案例相比,所有存在高度偏差案例的燃料极流道压降均增加了约28.6%。三层电堆中,DN1各层电压近乎相等,层间电压误差仅0.4%,气流变异系数为1.8%,气体分配均匀;DN2顶层流道后部氢气完全耗尽,浓差极化加剧,电压持续衰减,层间电压误差达6.7%,气流变异系数升至18.7%。

【结论】单层电池流道高度公差可在当前范围内适度放宽以降低制造成本,但电堆装配须严格控制层间尺寸一致性。本文的研究为SOC电堆制造公差合理设定提供理论依据

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Numerical Study on the Effects of Flow Channel Height Tolerances on the Performance of Solid Oxide Cell Stacks
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    【目的】针对固体氧化物电池(SOC)电堆制造装配中金属连接体流道高度尺寸公差引发的内部流动非均匀性问题,评估其对单层及多层电堆性能与长期稳定性的影响,为公差合理设定提供依据。

    【方法】本文构建热-质-电-化多场耦合数值模型,针对单层电堆设置流道均匀高度、随机高度、向两侧递减和向两侧递增四种分布,并对比三层电堆层间高度一致(DN1)与不一致(DN2)工况,在0.8 V恒压工况下分析电流、流动与传质特性。

    【结果】单层电堆中,四种高度分布的宏观电流密度差异小于0.5%,界面电流密度标准差最大相对偏差仅0.18%,电流分布对高度公差不敏感;然而,进一步的流动与传质分析揭示了隐藏的不均匀性。与均匀案例相比,所有存在高度偏差案例的燃料极流道压降均增加了约28.6%。三层电堆中,DN1各层电压近乎相等,层间电压误差仅0.4%,气流变异系数为1.8%,气体分配均匀;DN2顶层流道后部氢气完全耗尽,浓差极化加剧,电压持续衰减,层间电压误差达6.7%,气流变异系数升至18.7%。

    【结论】单层电池流道高度公差可在当前范围内适度放宽以降低制造成本,但电堆装配须严格控制层间尺寸一致性。本文的研究为SOC电堆制造公差合理设定提供理论依据

    Purpose: Dimensional tolerances in the flow-channel height of metallic interconnects are unavoidable during the manufacturing and assembly of solid oxide cell (SOC) stacks. Such tolerances can lead to non-uniform internal flow distribution and may threaten cell performance and long-term stability. This study aims to evaluate the effects of flow-channel height tolerance on the coupled electrical, flow, and mass-transfer behavior in single-layer and three-layer SOC stacks, and to provide a theoretical basis for rational tolerance specification. 

    Methods: A coupled thermal–mass–electrical–chemical multiphysics model was developed for SOC stacks. The model integrates an electrochemical model with momentum, species, and energy conservation equations, allowing analysis of current density, gas-flow distribution, pressure drop, and temperature. For the single-layer stack, four flow-channel height profiles were considered: uniform height, random height, height decreasing toward both sides, and height increasing toward both sides. For the three-layer stack, two comparative cases were further examined: consistent layer heights (DN1) and inconsistent layer heights (DN2). All simulations were performed under constant-voltage operation at 0.8 V. Macroscopic and interfacial current-density distributions, gas distribution, fuel-channel pressure drop, interlayer voltage variation, and the coefficient of variation (CV) of gas flow were systematically compared. 

    Results: For the single-layer stack, the difference in macroscopic current density among the four flow-channel height profiles was less than 0.5%, and the maximum relative deviation of the standard deviation of the interfacial current density was only 0.18%. This indicates that the current distribution was insensitive to flow-channel height tolerance within the studied range. However, further analysis of flow and mass transfer revealed hidden non-uniformity. Under all height-deviation scenarios, the fuel-side channel pressure drop increased by approximately 28.6% compared with the uniform case, indicating that the flow field was far more sensitive to height tolerance than the electrical performance. For the three-layer stack, the layer voltages in DN1 were nearly identical, with an interlayer voltage error of only 0.4% and a gas-flow CV of 1.8%, indicating excellent gas-distribution uniformity. In contrast, in DN2, complete hydrogen depletion occurred in the rear region of the top-layer flow channel, concentration polarization intensified, and the voltage decreased continuously; the interlayer voltage error reached 6.7%, and the gas-flow CV was 18.7%, indicating a highly non-uniform gas distribution. These results show that although the current distribution in a single cell is relatively tolerant of flow-channel height deviations, the flow and mass-transfer fields are strongly affected. In multilayer stacks, interlayer height inconsistency can lead to severe local fuel starvation and performance degradation. 

    Conclusions: Within the range studied, the flow-channel height tolerance for single cells can be moderately relaxed to reduce manufacturing costs. However, interlayer dimensional consistency must be strictly controlled during stack assembly. The proposed coupled model and findings provide a theoretical basis for formulating reasonable manufacturing tolerances for SOC stacks.

    . 流道高度公差对固体氧化物电池堆性能影响的数值研究. 热力发电, : - . DOI: 10.19666/j.rlfd.202608020
    . Numerical Study on the Effects of Flow Channel Height Tolerances on the Performance of Solid Oxide Cell Stacks[J]. Thermal Power Generation, : - . DOI: 10.19666/j.rlfd.202608020

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    2种不同金属材料的力学参数
    科
    Family
    属数
    Number of
    genus
    种数
    Number of
    species
    占总种数比例
    Percentage of
    total species (%)
    属
    Genus
    种数
    Number of
    species
    占总种数比例
    Percentage of total
    species (%)
    鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
    小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
    多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
    红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
    小菇属 Mycena 11 5.26
    光柄菇属 Pluteus 5 2.39
    红菇属 Russula 17 8.13
    栓菌属 Trametes 5 2.39
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