Article(id=1241718661887611596, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1241718213453607496, articleNumber=null, orderNo=null, doi=10.3981/j.issn.2097-0781.2022.03.002, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1659196800000, receivedDateStr=2022-07-31, revisedDate=1661961600000, revisedDateStr=2022-09-01, acceptedDate=null, acceptedDateStr=null, onlineDate=1667491200000, onlineDateStr=2022-11-04, pubDate=1663603200000, pubDateStr=2022-09-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1667491200000, onlineIssueDateStr=2022-11-04, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1773978399008, creator=sys-migrate, updateTime=1773978399008, updator=sys-migrate, issue=Issue{id=1241718213453607496, tenantId=1146029695717560320, journalId=1146032081894723586, year='2022', volume='1', issue='3', pageStart='10', pageEnd='148', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=1, createTime=1773978292094, creator=sys-migrate, updateTime=1776075247554, updator=13041195026, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1250513482186179119, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1241718213453607496, language=EN, specialIssueTitle=Science and Technology Foresight, coverIllustrator=null, specialIssueEditor=null, specialIssueAbout=null), CN=IssueExt(id=1250513482186179120, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1241718213453607496, language=CN, specialIssueTitle=集成电路科学与工程专刊, coverIllustrator=null, specialIssueEditor=null, specialIssueAbout=null)}, issueFiles=null}, startPage=20, endPage=41, ext={EN=ArticleExt(id=1241718668590117718, articleId=1241718661887611596, tenantId=1146029695717560320, journalId=1146032081894723586, language=EN, title=Development of Integrated Circuit Industrial Technologies in the Post-Moore Era, columnId=1149656489310208610, journalTitle=Science and Technology Foresight, columnName=Review and Commentary, runingTitle=null, highlight=null, articleAbstract=

Logic and memory technologies of integrated circuits (ICs) cannot be updated simply by plane scaling in the post-Moore era, and three dimensions (or 3D) have become a promising development direction. This paper discussed the development of technologies that have attracted wide attention from industries in the post-Moore era and are highly compatible with the existing IC industrial technologies and ecology in terms of logic, memory, and 3D integration. Furthermore, the paper analyzed the advantages and challenges of various technologies and tried to give suggestions on China’s research and development in this regard. In addition, in terms of logic technology, the paper started from the device development to expound on the current mainstream FinFET in mass production and gate-all-around nanodevices to be mass-produced and then introduced Forksheet and CFET devices. In terms of memory technology, the paper analyzed several memory devices, which include six different memorizers that are or are to be mass-produced. Finally, in terms of 3D integration, the paper described three popular technologies including 3D stacking, Chiplet, and large chips.

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集成电路逻辑技术和存储技术在后摩尔时代已无法单纯依靠平面尺寸微缩来实现更新迭代,立体化（或三维化）已成为重要的发展方向。文章主要从逻辑、存储、三维集成3方面探讨了后摩尔时代产业界关注较多且与当前集成电路产业技术和生态兼容性较高的技术发展趋势,分析了各类技术的优点及挑战,并尝试给出中国研究发展的建议。逻辑技术以器件发展为主线,对从目前量产的主流鳍式场效应晶体管（FinFET）到即将进入量产的围栅纳米器件进行探讨,继而展望了堆叠叉片（Forksheet）晶体管和互补场效应晶体管（CFET）两种器件;存储技术以不同类型的存储器件为主线,覆盖了量产中及即将进入量产的6类存储器;三维集成讨论了三维堆叠、芯粒（Chiplet）、大芯片3种目前较受关注的技术。

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卜伟海,教授级高级工程师。现任北方集成电路技术创新中心副总经理、技术开发与合作负责人。主要研究方向为先进逻辑器件与工艺、嵌入式新型存储技术等。曾作为国内领先集成电路企业的先导技术研发团队骨干和负责人完成多个节点工艺技术预研,主持和参与国家“863”计划、国家重点研发计划、国家科技重大专项02专项等多个重大项目。入选北京市优秀人才培养资助计划、北京经济技术开发区“亦麒麟”杰出人才。合作撰写专著2部,发表论文20余篇,获授权发明专利52项。电子信箱： 。

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卜伟海,教授级高级工程师。现任北方集成电路技术创新中心副总经理、技术开发与合作负责人。主要研究方向为先进逻辑器件与工艺、嵌入式新型存储技术等。曾作为国内领先集成电路企业的先导技术研发团队骨干和负责人完成多个节点工艺技术预研,主持和参与国家“863”计划、国家重点研发计划、国家科技重大专项02专项等多个重大项目。入选北京市优秀人才培养资助计划、北京经济技术开发区“亦麒麟”杰出人才。合作撰写专著2部,发表论文20余篇,获授权发明专利52项。电子信箱： 。

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卜伟海,教授级高级工程师。现任北方集成电路技术创新中心副总经理、技术开发与合作负责人。主要研究方向为先进逻辑器件与工艺、嵌入式新型存储技术等。曾作为国内领先集成电路企业的先导技术研发团队骨干和负责人完成多个节点工艺技术预研,主持和参与国家“863”计划、国家重点研发计划、国家科技重大专项02专项等多个重大项目。入选北京市优秀人才培养资助计划、北京经济技术开发区“亦麒麟”杰出人才。合作撰写专著2部,发表论文20余篇,获授权发明专利52项。电子信箱： 。

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ν为电阻变化百分比。

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V为操作电压;Vg为WL栅压。

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工艺类型 芯片与芯片 芯片与晶圆 晶圆与晶圆
示意图
优势 工艺灵活,采用合格芯粒,良率高 易于集成混合键合工艺;
工艺灵活,采用合格芯粒,良率高		 成本低;
生产效率高
劣势 不利于规模化生产;
不易加工和键合;
静电阻抗器要求高		 静电阻抗器要求高;
不易加工和键合		 混合键合工艺集成困难;
良率不易保障
), ArticleFig(id=1241718748168647052, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718661887611596, language=CN, label=表1, caption=

堆叠技术分类

, figureFileSmall=null, figureFileBig=null, tableContent=
工艺类型 芯片与芯片 芯片与晶圆 晶圆与晶圆
示意图
优势 工艺灵活,采用合格芯粒,良率高 易于集成混合键合工艺;
工艺灵活,采用合格芯粒,良率高		 成本低;
生产效率高
劣势 不利于规模化生产;
不易加工和键合;
静电阻抗器要求高		 静电阻抗器要求高;
不易加工和键合		 混合键合工艺集成困难;
良率不易保障
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Development of Integrated Circuit Industrial Technologies in the Post-Moore Era
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Weihai BU 1, † , Zhiliang XIA 2 , Zhiguo ZHAO 1 , Yun LIU 1 , Yikang ZHOU 1
Science and Technology Foresight | Review and Commentary 2022,1(3): 20-41
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Science and Technology Foresight | Review and Commentary 2022, 1(3): 20-41
Development of Integrated Circuit Industrial Technologies in the Post-Moore Era
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Weihai BU1, † , Zhiliang XIA2, Zhiguo ZHAO1, Yun LIU1, Yikang ZHOU1
Authors
  • 1. Semiconductor Technology Innovation Center (Beijing) Corp., Beijing 100176, China
  • 2. Yangtze Memory Technologies Co., Ltd., Wuhan 430000, China

Corresponding author:

†
Development of Integrated Circuit Industrial Technologies in the Post-Moore Era
Weihai BU1, † , Zhiliang XIA2, Zhiguo ZHAO1, Yun LIU1, Yikang ZHOU1
Affiliations
  • 1. Semiconductor Technology Innovation Center (Beijing) Corp., Beijing 100176, China
  • 2. Yangtze Memory Technologies Co., Ltd., Wuhan 430000, China
Published: 2022-09-20 doi: 10.3981/j.issn.2097-0781.2022.03.002
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Abstract
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Logic and memory technologies of integrated circuits (ICs) cannot be updated simply by plane scaling in the post-Moore era, and three dimensions (or 3D) have become a promising development direction. This paper discussed the development of technologies that have attracted wide attention from industries in the post-Moore era and are highly compatible with the existing IC industrial technologies and ecology in terms of logic, memory, and 3D integration. Furthermore, the paper analyzed the advantages and challenges of various technologies and tried to give suggestions on China’s research and development in this regard. In addition, in terms of logic technology, the paper started from the device development to expound on the current mainstream FinFET in mass production and gate-all-around nanodevices to be mass-produced and then introduced Forksheet and CFET devices. In terms of memory technology, the paper analyzed several memory devices, which include six different memorizers that are or are to be mass-produced. Finally, in terms of 3D integration, the paper described three popular technologies including 3D stacking, Chiplet, and large chips.

post-Moore era  /  integrated circuit  /  advanced logic  /  advanced memory  /  3D integration

Logic and memory technologies of integrated circuits (ICs) cannot be updated simply by plane scaling in the post-Moore era, and three dimensions (or 3D) have become a promising development direction. This paper discussed the development of technologies that have attracted wide attention from industries in the post-Moore era and are highly compatible with the existing IC industrial technologies and ecology in terms of logic, memory, and 3D integration. Furthermore, the paper analyzed the advantages and challenges of various technologies and tried to give suggestions on China’s research and development in this regard. In addition, in terms of logic technology, the paper started from the device development to expound on the current mainstream FinFET in mass production and gate-all-around nanodevices to be mass-produced and then introduced Forksheet and CFET devices. In terms of memory technology, the paper analyzed several memory devices, which include six different memorizers that are or are to be mass-produced. Finally, in terms of 3D integration, the paper described three popular technologies including 3D stacking, Chiplet, and large chips.

post-Moore era  /  integrated circuit  /  advanced logic  /  advanced memory  /  3D integration
卜伟海, 夏志良, 赵治国, 刘芸, 周亦康. 后摩尔时代集成电路产业技术的发展趋势[J]. 前瞻科技, 2022 , 1 (3) : 10 -148 . DOI: 10.3981/j.issn.2097-0781.2022.03.002
Weihai BU, Zhiliang XIA, Zhiguo ZHAO, Yun LIU, Yikang ZHOU. Development of Integrated Circuit Industrial Technologies in the Post-Moore Era[J]. Science and Technology Foresight, 2022 , 1 (3) : 10 -148 . DOI: 10.3981/j.issn.2097-0781.2022.03.002
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doi: 10.3981/j.issn.2097-0781.2022.03.002
  • Received：2022-07-31
  • Published：2022-09-20
  • Release：2022-11-04
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  • 收稿日期：2022-07-31
  • 修回日期：2022-09-01
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    1. Semiconductor Technology Innovation Center (Beijing) Corp., Beijing 100176, China
    2. Yangtze Memory Technologies Co., Ltd., Wuhan 430000, China

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卜伟海, 夏志良, 赵治国, 刘芸, 周亦康. 后摩尔时代集成电路产业技术的发展趋势[J]. 前瞻科技, 2022 , 1 (3) : 10 -148 . DOI: 10.3981/j.issn.2097-0781.2022.03.002
Weihai BU, Zhiliang XIA, Zhiguo ZHAO, Yun LIU, Yikang ZHOU. Development of Integrated Circuit Industrial Technologies in the Post-Moore Era[J]. Science and Technology Foresight, 2022 , 1 (3) : 10 -148 . DOI: 10.3981/j.issn.2097-0781.2022.03.002
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多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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