Article(id=1241718216150536513, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1241718213453607496, articleNumber=null, orderNo=null, doi=10.3981/j.issn.2097-0781.2022.03.001, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1660924800000, receivedDateStr=2022-08-20, revisedDate=1661788800000, revisedDateStr=2022-08-30, acceptedDate=null, acceptedDateStr=null, onlineDate=1667491200000, onlineDateStr=2022-11-04, pubDate=1663603200000, pubDateStr=2022-09-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1667491200000, onlineIssueDateStr=2022-11-04, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1773978292735, creator=sys-migrate, updateTime=1773978292735, updator=sys-migrate, issue=Issue{id=1241718213453607496, tenantId=1146029695717560320, journalId=1146032081894723586, year='2022', volume='1', issue='3', pageStart='10', pageEnd='148', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=1, createTime=1773978292094, creator=sys-migrate, updateTime=1776075247554, updator=13041195026, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1250513482186179119, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1241718213453607496, language=EN, specialIssueTitle=Science and Technology Foresight, coverIllustrator=null, specialIssueEditor=null, specialIssueAbout=null), CN=IssueExt(id=1250513482186179120, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1241718213453607496, language=CN, specialIssueTitle=集成电路科学与工程专刊, coverIllustrator=null, specialIssueEditor=null, specialIssueAbout=null)}, issueFiles=null}, startPage=10, endPage=19, ext={EN=ArticleExt(id=1241718220294517324, articleId=1241718216150536513, tenantId=1146029695717560320, journalId=1146032081894723586, language=EN, title=Status of Global Research and Development Cooperation in Integrated Circuits and Its Inspiration, columnId=1149656489310208610, journalTitle=Science and Technology Foresight, columnName=Review and Commentary, runingTitle=null, highlight=null, articleAbstract=
Integrated circuits (ICs) are the basis of the information industry and play an important role in social and economic development. To systematically understand the innovation and development of IC in China and overcome the major challenges of research and development (R & D) and coordinated development in the new era, we collate the development status of global IC and analyze the technology development trends and the global cooperation among major R & D organizations by the bibliometric method. It is found that leading IC enterprises are the main entities of technology innovation in this field, and they form a lateral cooperation mode. Meanwhile, large-scale R & D centers with enterprises or research institutes at the core play a critical role in developing key general-purpose technology, and they present the cooperation and development trends of coexisted globalization and regionalization. Moreover, relevant policy and development suggestions are put forward given the R & D status in China’s IC and the construction status of national strategic science and technology forces.
, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, authorCompany=null, fund=null, authors=null, authorsList=Wenwu WANG, Jun LUO, Xiaolei WANG, Hao XU), CN=ArticleExt(id=1241718220172882507, articleId=1241718216150536513, tenantId=1146029695717560320, journalId=1146032081894723586, language=CN, title=全球集成电路技术合作研发的发展现状及其经验启示, columnId=1148708266483446458, journalTitle=前瞻科技, columnName=综述与述评, runingTitle=null, highlight=null, articleAbstract=
集成电路是信息产业的基础,在社会经济发展等方面发挥了重要的作用。为系统了解中国集成电路技术创新发展情况,并应对新时期技术研发与协同发展的重大挑战,文章通过文献计量等方法,对全球集成电路技术发展现状进行初步梳理,分析了技术发展趋势和主要研发力量分工合作现状。研究结果表明,在集成电路领域,领军企业是技术创新的主体,构建了以横向水平联合为主的分工模式;以企业或科研机构等为核心组成的大型研发中心承担了重要的关键共性技术研发功能,同时呈现出全球化和区域化并存的合作发展态势。最后还结合中国集成电路领域技术研发和国家战略科技力量建设需求,提出了相关的政策和发展建议。
, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=TaGNBYDKoCfKh3yowFtjng==, magXml=K6sfTjh8mj7qlxEHhus86Q==, pdfUrl=null, pdf=rJ8HOEg7+ECl4eWyHzg0fA==, pdfFileSize=1529162, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=TJYAFercElRFgGM6Tn/WNw==, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=7MLYIda5WYNPTHherfDodw==, mapNumber=null, authorCompany=null, fund=null, authors=
 |
王文武,研究员,博士研究生导师。现任中国科学院微电子研究所副所长。长期致力于集成电路先导工艺与器件技术研究,带领团队参与了22、14、5 nm工艺的集成电路先导技术研发。主持多项国家科技重大专项项目(课题)等国家级科研任务。获中国科学院杰出科技成就奖、北京市科学技术奖一等奖、中国电子信息科技创新团队奖、国务院政府特殊津贴等科技奖励和荣誉。在集成电路领域国际权威期刊/会议上发表论文200余篇,获授权发明专利93项。电子信箱: wangwenwu@ime.ac.cn。 |
, authorsList=王文武, 罗军, 王晓磊, 徐昊)}, authors=[Author(id=1241718235507257962, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=wangwenwu@ime.ac.cn, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1241718235578561132, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, authorId=1241718235507257962, language=EN, stringName=Wenwu WANG, firstName=Wenwu, middleName=null, lastName=WANG, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1241718235645669997, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, authorId=1241718235507257962, language=CN, stringName=王文武, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=中国科学院微电子研究所,北京 100029, bio={"img":"8ebgvDJo++cCZCsoaME2kQ==","content":"
王文武,研究员,博士研究生导师。现任中国科学院微电子研究所副所长。长期致力于集成电路先导工艺与器件技术研究,带领团队参与了22、14、5 nm工艺的集成电路先导技术研发。主持多项国家科技重大专项项目(课题)等国家级科研任务。获中国科学院杰出科技成就奖、北京市科学技术奖一等奖、中国电子信息科技创新团队奖、国务院政府特殊津贴等科技奖励和荣誉。在集成电路领域国际权威期刊/会议上发表论文200余篇,获授权发明专利93项。电子信箱: wangwenwu@ime.ac.cn。
"}, bioImg=8ebgvDJo++cCZCsoaME2kQ==, bioContent=
王文武,研究员,博士研究生导师。现任中国科学院微电子研究所副所长。长期致力于集成电路先导工艺与器件技术研究,带领团队参与了22、14、5 nm工艺的集成电路先导技术研发。主持多项国家科技重大专项项目(课题)等国家级科研任务。获中国科学院杰出科技成就奖、北京市科学技术奖一等奖、中国电子信息科技创新团队奖、国务院政府特殊津贴等科技奖励和荣誉。在集成电路领域国际权威期刊/会议上发表论文200余篇,获授权发明专利93项。电子信箱: wangwenwu@ime.ac.cn。
, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1241718235435954790, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, xref=null, ext=[AuthorCompanyExt(id=1241718235440149095, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China), AuthorCompanyExt(id=1241718235448537704, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=中国科学院微电子研究所,北京 100029)])]), Author(id=1241718235708584559, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, orderNo=1, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=null, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1241718235771499121, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, authorId=1241718235708584559, language=EN, stringName=Jun LUO, firstName=Jun, middleName=null, lastName=LUO, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1241718239110165107, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, authorId=1241718235708584559, language=CN, stringName=罗军, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=中国科学院微电子研究所,北京 100029, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1241718235435954790, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, xref=null, ext=[AuthorCompanyExt(id=1241718235440149095, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China), AuthorCompanyExt(id=1241718235448537704, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=中国科学院微电子研究所,北京 100029)])]), Author(id=1241718239219217013, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, orderNo=2, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=null, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1241718239294714487, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, authorId=1241718239219217013, language=EN, stringName=Xiaolei WANG, firstName=Xiaolei, middleName=null, lastName=WANG, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1241718239361823352, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, authorId=1241718239219217013, language=CN, stringName=王晓磊, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=中国科学院微电子研究所,北京 100029, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1241718235435954790, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, xref=null, ext=[AuthorCompanyExt(id=1241718235440149095, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China), AuthorCompanyExt(id=1241718235448537704, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=中国科学院微电子研究所,北京 100029)])]), Author(id=1241718239433126522, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, orderNo=3, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=null, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1241718239500235388, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, authorId=1241718239433126522, language=EN, stringName=Hao XU, firstName=Hao, middleName=null, lastName=XU, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1241718239567344253, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, authorId=1241718239433126522, language=CN, stringName=徐昊, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=中国科学院微电子研究所,北京 100029, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1241718235435954790, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, xref=null, ext=[AuthorCompanyExt(id=1241718235440149095, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China), AuthorCompanyExt(id=1241718235448537704, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=中国科学院微电子研究所,北京 100029)])])], keywords=[Keyword(id=1241718239659618942, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, orderNo=1, keyword=integrated circuit), Keyword(id=1241718239709950591, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, orderNo=2, keyword=national strategic science and technology forces), Keyword(id=1241718239772865152, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, orderNo=3, keyword=cooperation mode), Keyword(id=1241718239827391105, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, orderNo=1, keyword=集成电路), Keyword(id=1241718239898694274, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, orderNo=2, keyword=国家战略科技力量), Keyword(id=1241718239961608835, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, orderNo=3, keyword=合作模式)], refs=[Reference(id=1241718242801152660, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://github.com/karlrupp/microprocessor-trend-data, language=null, rfNumber=[1], rfOrder=0, authorNames=Rupp K, journalName=null, refType=null, unstructuredReference=
Rupp K. 50 Years of microprocessor trend data[EB/OL]. [2022-07-04]. https://github.com/karlrupp/microprocessor-trend-data., articleTitle=50 Years of microprocessor trend data, refAbstract=null), Reference(id=1241718244726338197, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://www.intel.com/content/www/us/en/silicon-innovations/revolution-ary-22nm-transistor-technology-presentation.html, language=null, rfNumber=[2], rfOrder=1, authorNames=Bohr M, Mistry K, journalName=null, refType=null, unstructuredReference=
Bohr M,
Mistry K. Intel,s revolutionary 22 nm transistor technology[R/OL]. [2022-07-04]. https://www.intel.com/content/www/us/en/silicon-innovations/revolution-ary-22nm-transistor-technology-presentation.html., articleTitle=Intel,s revolutionary 22 nm transistor technology, refAbstract=null), Reference(id=1241718244801835670, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://irds.ieee.org/editions/2021/executive-summary, language=null, rfNumber=[3], rfOrder=2, authorNames=null, journalName=null, refType=null, unstructuredReference=IRDS™ 2021: Executive summary[R/OL]. [2022-07-04]. https://irds.ieee.org/editions/2021/executive-summary., articleTitle=IRDS™ 2021: Executive summary, refAbstract=null), Reference(id=1241718244873138839, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=2021, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[4], rfOrder=3, authorNames=黄如, journalName=null, refType=null, unstructuredReference=黄如. 后摩尔时代集成电路技术发展与探讨[R]. 北京: 中国科学院第二十次院士大会举行学部第七届学术年会全体院士学术报告会,
2021., articleTitle=后摩尔时代集成电路技术发展与探讨, refAbstract=null), Reference(id=1241718244944442008, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM19573.2019.8993577, pmid=null, pmcid=null, year=2019, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[5], rfOrder=4, authorNames=Yeap G, Lin S S, Chen Y M, journalName=2019 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Yeap G,
Lin S S,
Chen Y M, et al. 5 nm CMOS production technology platform featuring full-fledged EUV, and high mobility channel FinFETs with densest 0.021 µm
2 SRAM cells for mobile SoC and high performance computing applications[C]//
2019 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2019, doi:
10.1109/IEDM19573.2019.8993577., articleTitle=5 nm CMOS production technology platform featuring full-fledged EUV, and high mobility channel FinFETs with densest 0.021 µm
2 SRAM cells for mobile SoC and high performance computing applications, refAbstract=null), Reference(id=1241718245028328089, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://www.euvlitho.com/2017/S1.pdf, language=null, rfNumber=[6], rfOrder=5, authorNames=Fomenkov I, journalName=null, refType=null, unstructuredReference=
Fomenkov I. EUV source for high volume manufacturing: Performance at 250 W and key technologies for power scaling[R/OL]. [2022-08-29]. https://www.euvlitho.com/2017/S1.pdf., articleTitle=EUV source for high volume manufacturing: Performance at 250 W and key technologies for power scaling, refAbstract=null), Reference(id=1241718245170934426, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.26599/TST.2021.9010049, pmid=null, pmcid=null, year=2022, volume=27, issue=3, pageStart=534, pageEnd=558, url=https://ieeexplore.ieee.org/document/9614073/, language=null, rfNumber=[7], rfOrder=6, authorNames=Zhang D, Su X, Chang H, journalName=Tsinghua Science and Technology, refType=null, unstructuredReference=
Zhang D,
Su X,
Chang H, et al. Advanced process and electron device technology[J].
Tsinghua Science and Technology,
2022,
27(3): 534-558., articleTitle=Advanced process and electron device technology, refAbstract=null), Reference(id=1241718245242237595, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM19573.2019.8993631, pmid=null, pmcid=null, year=2020, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[8], rfOrder=7, authorNames=Ryckaert J, Na M H, Weckx P, journalName=2020 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Ryckaert J,
Na M H,
Weckx P, et al. Enabling sub-5 nm CMOS technology scaling thinner and taller![C]//
2020 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2020, doi:
10.1109/IEDM19573.2019.8993631., articleTitle=Enabling sub-5 nm CMOS technology scaling thinner and taller!, refAbstract=null), Reference(id=1241718245309346460, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM19574.2021.9720651, pmid=null, pmcid=null, year=2021, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[9], rfOrder=8, authorNames=Obrien K P, Dorow C J, Penumatcha A, journalName=2021 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Obrien K P,
Dorow C J,
Penumatcha A, et al. Advancing 2D monolayer CMOS through contact, channel and interface engineering[C]//
2021 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2021, doi:
10.1109/IEDM19574.2021.9720651., articleTitle=Advancing 2D monolayer CMOS through contact, channel and interface engineering, refAbstract=null), Reference(id=1241718245384843933, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM19574.2021.9720608, pmid=null, pmcid=null, year=2021, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[10], rfOrder=9, authorNames=Chou A S, Wu T, Cheng C C, journalName=2021 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Chou A S,
Wu T,
Cheng C C, et al. Antimony semimetal contact with enhanced thermal stability for high performance 2D electronics[C]//
2021 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2021, doi:
10.1109/IEDM19574.2021.9720608., articleTitle=Antimony semimetal contact with enhanced thermal stability for high performance 2D electronics, refAbstract=null), Reference(id=1241718245464535710, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1038/s41586-021-04323-3, pmid=null, pmcid=null, year=2022, volume=603, issue=null, pageStart=259, pageEnd=264, url=https://doi.org/10.1038/s41586-021-04323-3, language=null, rfNumber=[11], rfOrder=10, authorNames=Wu F, Tian H, Shen Y, journalName=Nature, refType=null, unstructuredReference=
Wu F,
Tian H,
Shen Y, et al. Vertical MoS
2 transistors with sub-1-nm gate lengths[J].
Nature,
2022,
603: 259-264., articleTitle=Vertical MoS
2 transistors with sub-1-nm gate lengths, refAbstract=null), Reference(id=1241718246957707935, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/VLSITechnologyandCir46769.2022.9830423, pmid=null, pmcid=null, year=2022, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[12], rfOrder=11, authorNames=Mii Y J, journalName=2022 Symposium on VLSI Technology and Circuit, refType=null, unstructuredReference=
Mii Y J. Semiconductor innovations, from device to system[C]//
2022 Symposium on VLSI Technology and Circuit. Piscataway: IEEE Press,
2022, doi:
10.1109/VLSITechnologyandCir46769.2022.9830423., articleTitle=Semiconductor innovations, from device to system, refAbstract=null), Reference(id=1241718247041594016, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM13553.2020.9372010, pmid=null, pmcid=null, year=2020, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[13], rfOrder=12, authorNames=Moroz V, Lin X W, Asenov P, journalName=2020 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Moroz V,
Lin X W,
Asenov P, et al. DTCO launches Moore,s law over the feature scaling wall[C]//
2020 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2020, doi:
10.1109/IEDM13553.2020.9372010., articleTitle=DTCO launches Moore,s law over the feature scaling wall, refAbstract=null), Reference(id=1241718247104508577, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM13553.2020.9371959, pmid=null, pmcid=null, year=2020, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[14], rfOrder=13, authorNames=Alsmeier J, Higashitani M, Paak S S, journalName=2020 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Alsmeier J,
Higashitani M,
Paak S S, et al. Past and future of 3D flash[C]//
2020 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2020, doi:
10.1109/IEDM13553.2020.9371959., articleTitle=Past and future of 3D flash, refAbstract=null), Reference(id=1241718247184200354, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM13553.2020.9372125, pmid=null, pmcid=null, year=2020, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[15], rfOrder=14, authorNames=Chandrasekaran N, Ramaswamy N, Mouli C, journalName=2020 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Chandrasekaran N,
Ramaswamy N,
Mouli C. Memory technology: Innovations needed for continued technology scaling and enabling advanced computing systems[C]//
2020 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2020, doi:
10.1109/IEDM13553.2020.9372125., articleTitle=Memory technology: Innovations needed for continued technology scaling and enabling advanced computing systems, refAbstract=null), Reference(id=1241718247251309219, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM19574.2021.9720534, pmid=null, pmcid=null, year=2021, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[16], rfOrder=15, authorNames=Li Y, Tang J, Gao B, journalName=2021 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Li Y,
Tang J,
Gao B, et al. Monolithic 3D integration of logic, memory and computing-in-memory for one-shot learning[C]//
2021 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2021, doi:
10.1109/IEDM19574.2021.9720534., articleTitle=Monolithic 3D integration of logic, memory and computing-in-memory for one-shot learning, refAbstract=null), Reference(id=1241718247322612388, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://irds.ieee.org/editions/2021/more-than-moore, language=null, rfNumber=[17], rfOrder=16, authorNames=null, journalName=null, refType=null, unstructuredReference=IRDS
TM 2021: More than Moore white paper[R/OL]. [2022-07-04]. https://irds.ieee.org/editions/2021/more-than-moore., articleTitle=IRDS
TM 2021: More than Moore white paper, refAbstract=null), Reference(id=1241718247385526949, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM19574.2021.9720583, pmid=null, pmcid=null, year=2021, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[18], rfOrder=17, authorNames=Kim K, journalName=2021 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Kim K. The smallest engine transforming humanity: The past, present, and future[C]//
2021 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2021, doi:
10.1109/IEDM19574.2021.9720583., articleTitle=The smallest engine transforming humanity: The past, present, and future, refAbstract=null), Reference(id=1241718247461024422, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://www.congress.gov/bill/117th-congress/house-bill/4346/text, language=null, rfNumber=[19], rfOrder=18, authorNames=null, journalName=null, refType=null, unstructuredReference=United States the CHIPS and Science Act[R/OL]. (2022-07-27) [2022-08-29].https://www.congress.gov/bill/117th-congress/house-bill/4346/text., articleTitle=United States the CHIPS and Science Act, refAbstract=null), Reference(id=1241718247536521895, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://www.semiconductors.org/wp-content/uploads/2021/05/BCG-x-SIA-Streng-thening-the-Global-Semiconductor-Value-Chain-April-2021_1.pdf, language=null, rfNumber=[20], rfOrder=19, authorNames=null, journalName=null, refType=null, unstructuredReference=Strengthening the global semiconductor value chain[R/OL]. (2021-04-01) [2022-07-04].https://www.semiconductors.org/wp-content/uploads/2021/05/BCG-x-SIA-Streng-thening-the-Global-Semiconductor-Value-Chain-April-2021_1.pdf., articleTitle=Strengthening the global semiconductor value chain, refAbstract=null), Reference(id=1241718247632990888, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://news.dlut.edu.cn/info/1003/54708.htm, language=null, rfNumber=[21], rfOrder=20, authorNames=null, journalName=null, refType=null, unstructuredReference=大连理工大学科技创新创业与产业转型研究中心. 中国研发经费报告(2018)[R/OL]. (2019-03-07) [2022-07-04]. https://news.dlut.edu.cn/info/1003/54708.htm., articleTitle=中国研发经费报告(2018), refAbstract=null), Reference(id=1241718247708488361, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=http://www.customs.gov.cn/customs/302249/zfxxgk/2799825/302274/302275/ 4122175/index.html, language=null, rfNumber=[22], rfOrder=21, authorNames=null, journalName=null, refType=null, unstructuredReference=2021年12月全国进口重点商品量值表(人民币值)[EB/OL]. (2022-01-17) [2022-07-04]. http://www.customs.gov.cn/customs/302249/zfxxgk/2799825/302274/302275/ 4122175/index.html., articleTitle=2021年12月全国进口重点商品量值表(人民币值), refAbstract=null), Reference(id=1241718247771402922, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://www.semi.org/en/news-media-press-releases/semi-press-releases/global-fab-equipment-spending-expected-to-reach-record-%24109-billion-in-2022-semi-reports, language=null, rfNumber=[23], rfOrder=22, authorNames=null, journalName=null, refType=null, unstructuredReference=Global fab equipment spending expected to reach record $109 billion in 2022,SEMI reports[R/OL]. (2022-06-13) [2022-07-04]. https://www.semi.org/en/news-media-press-releases/semi-press-releases/global-fab-equipment-spending-expected-to-reach-record-%24109-billion-in-2022-semi-reports., articleTitle=Global fab equipment spending expected to reach record $109 billion in 2022,SEMI reports, refAbstract=null), Reference(id=1241718247838511787, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://www.wipo.int/publications/en/details.jsp?id=4560, language=null, rfNumber=[24], rfOrder=23, authorNames=null, journalName=null, refType=null, unstructuredReference=WIPO. Global innovation index 2021, 14th edition[R/OL]. [2022-07-04]. https://www.wipo.int/publications/en/details.jsp?id=4560., articleTitle=Global innovation index 2021, 14th edition, refAbstract=null), Reference(id=1241718247918203564, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, doi=10.1109/IEDM13553.2020.9372023, pmid=null, pmcid=null, year=2020, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[25], rfOrder=24, authorNames=Samavedam S B, Ryckaert J, Beyne E, journalName=2020 IEEE International Electron Devices Meeting (IEDM), refType=null, unstructuredReference=
Samavedam S B,
Ryckaert J,
Beyne E, et al. Future logic scaling: Towards atomic channels and deconstructed chips[C]//
2020 IEEE International Electron Devices Meeting (IEDM). Piscataway: IEEE Press,
2020, doi:
10.1109/IEDM13553.2020.9372023., articleTitle=Future logic scaling: Towards atomic channels and deconstructed chips, refAbstract=null)], funds=null, companyList=[AuthorCompany(id=1241718235435954790, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, xref=null, ext=[AuthorCompanyExt(id=1241718235440149095, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China), AuthorCompanyExt(id=1241718235448537704, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, companyId=1241718235435954790, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=中国科学院微电子研究所,北京 100029)])], figs=[ArticleFig(id=1241718240079049348, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, label=null, caption=null, figureFileSmall=H3lm+fYoVraT/7EKJ/tHYQ==, figureFileBig=TJYAFercElRFgGM6Tn/WNw==, tableContent=null), ArticleFig(id=1241718240217461381, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, label=图1, caption=
微处理芯片关键技术指标50年(1972—2021年)发展趋势, figureFileSmall=H3lm+fYoVraT/7EKJ/tHYQ==, figureFileBig=TJYAFercElRFgGM6Tn/WNw==, tableContent=null), ArticleFig(id=1241718240406205062, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, label=null, caption=null, figureFileSmall=A6lBYERQA5+/esIeARNW4Q==, figureFileBig=JG9GetzEDOOa9vmayiSwpQ==, tableContent=null), ArticleFig(id=1241718240464925319, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, label=图2, caption=
近5年发表文章按国家(地区)统计 图中仅列出发表文章数量最多的6个国家(地区)。
, figureFileSmall=A6lBYERQA5+/esIeARNW4Q==, figureFileBig=JG9GetzEDOOa9vmayiSwpQ==, tableContent=null), ArticleFig(id=1241718240532034184, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, label=null, caption=null, figureFileSmall=XtD6AZaHE3dK7RRQhdkBTA==, figureFileBig=dycJEbIqRpGGnQBuQEnTPw==, tableContent=null), ArticleFig(id=1241718240599143049, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, label=图3, caption=
主要国家(地区)的3类机构发文占比 国家(地区)
, figureFileSmall=XtD6AZaHE3dK7RRQhdkBTA==, figureFileBig=dycJEbIqRpGGnQBuQEnTPw==, tableContent=null), ArticleFig(id=1241718240653669002, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, label=null, caption=null, figureFileSmall=+A2RHSErpUUa7Vf6QXVSvw==, figureFileBig=xpY085wkNW9q56PXKxd5Xg==, tableContent=null), ArticleFig(id=1241718240741749387, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, label=图4, caption=
IMEC合作机构按国家(地区)(a)和机构性质(b)统计, figureFileSmall=+A2RHSErpUUa7Vf6QXVSvw==, figureFileBig=xpY085wkNW9q56PXKxd5Xg==, tableContent=null), ArticleFig(id=1241718240800469644, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, label=null, caption=null, figureFileSmall=+XHa9sx8OBi1TLy/4dOjjQ==, figureFileBig=6CcaVsTGZVx0dwEE18uoOg==, tableContent=null), ArticleFig(id=1241718240859189901, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, label=图5, caption=
2006年和2016年中国高校研发经费来源比较, figureFileSmall=+XHa9sx8OBi1TLy/4dOjjQ==, figureFileBig=6CcaVsTGZVx0dwEE18uoOg==, tableContent=null), ArticleFig(id=1241718240930493070, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, label=null, caption=null, figureFileSmall=null, figureFileBig=null, tableContent=
| 序号 | 机构名称 | 机构性质 | 所在国家(地区) | 年均增加量/(篇 • a-1) |
| 1 | 三星电子 | 领军企业 | 韩国 | 5.8 |
| 2 | 英特尔 | 领军企业 | 美国 | 3.8 |
| 3 | IMEC | 科研机构 | 比利时 | 2.5 |
| 4 | 中国科学院微电子研究所 | 科研机构 | 中国大陆 | 2.5 |
| 5 | 韩国科学技术院 | 研究型大学 | 韩国 | 2.2 |
| 6 | 东京大学 | 研究型大学 | 日本 | 1.7 |
| 7 | 新加坡国立大学 | 研究型大学 | 新加坡 | 1.2 |
| 8 | 铠侠 | 领军企业 | 日本 | 1.1 |
| …… | | | |
| 51 | 赛灵思 | 领军企业 | 美国 | -1.1 |
| 52 | 得克萨斯大学 | 研究型大学 | 美国 | -1.2 |
| 53 | 香港科技大学 | 研究型大学 | 中国香港 | -1.2 |
| 54 | 格罗方德 | 领军企业 | 美国 | -2.4 |
| 55 | 密歇根大学 | 研究型大学 | 美国 | -2.7 |
| 56 | CEA-Leti | 科研机构 | 法国 | -2.9 |
| 57 | IBM | 领军企业 | 美国 | -4.0 |
), ArticleFig(id=1241718241005990543, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, label=表1, caption=
第一完成机构按年均增加量排序情况
, figureFileSmall=null, figureFileBig=null, tableContent=
| 序号 | 机构名称 | 机构性质 | 所在国家(地区) | 年均增加量/(篇 • a-1) |
| 1 | 三星电子 | 领军企业 | 韩国 | 5.8 |
| 2 | 英特尔 | 领军企业 | 美国 | 3.8 |
| 3 | IMEC | 科研机构 | 比利时 | 2.5 |
| 4 | 中国科学院微电子研究所 | 科研机构 | 中国大陆 | 2.5 |
| 5 | 韩国科学技术院 | 研究型大学 | 韩国 | 2.2 |
| 6 | 东京大学 | 研究型大学 | 日本 | 1.7 |
| 7 | 新加坡国立大学 | 研究型大学 | 新加坡 | 1.2 |
| 8 | 铠侠 | 领军企业 | 日本 | 1.1 |
| …… | | | |
| 51 | 赛灵思 | 领军企业 | 美国 | -1.1 |
| 52 | 得克萨斯大学 | 研究型大学 | 美国 | -1.2 |
| 53 | 香港科技大学 | 研究型大学 | 中国香港 | -1.2 |
| 54 | 格罗方德 | 领军企业 | 美国 | -2.4 |
| 55 | 密歇根大学 | 研究型大学 | 美国 | -2.7 |
| 56 | CEA-Leti | 科研机构 | 法国 | -2.9 |
| 57 | IBM | 领军企业 | 美国 | -4.0 |
), ArticleFig(id=1241718242469802640, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, label=null, caption=null, figureFileSmall=null, figureFileBig=null, tableContent=
| 技术类别 | 序号 | 机构名称 | 机构性质 | 所在国家(地区) | 文章占比/% |
| 先进逻辑及新型计算技术 | 1 | IMEC | 科研机构 | 比利时 | 15.6 |
| 2 | IBM | 领军企业 | 美国 | 9.0 |
| 3 | CEA-Leti | 科研机构 | 法国 | 5.7 |
| 存储技术 | 1 | 三星 | 领军企业 | 韩国 | 9.9 |
| 2 | IMEC | 科研机构 | 比利时 | 8.2 |
| 3 | 台积电 | 领军企业 | 中国台湾 | 6.3 |
| 工艺及先进集成和封装技术 | 1 | 英特尔 | 领军企业 | 美国 | 11.4 |
| 2 | IMEC | 科研机构 | 比利时 | 10.0 |
| 3 | 台积电 | 领军企业 | 中国台湾 | 9.0 |
| 机器学习技术 | 1 | IBM | 领军企业 | 美国 | 8.4 |
| 2 | 清华大学 | 研究型大学 | 中国大陆 | 8.4 |
| 3 | 韩国科学技术院 | 研究型大学 | 韩国 | 5.8 |
), ArticleFig(id=1241718242541105809, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, label=表2, caption=
先进逻辑及新型计算技术等领域的代表性机构
, figureFileSmall=null, figureFileBig=null, tableContent=
| 技术类别 | 序号 | 机构名称 | 机构性质 | 所在国家(地区) | 文章占比/% |
| 先进逻辑及新型计算技术 | 1 | IMEC | 科研机构 | 比利时 | 15.6 |
| 2 | IBM | 领军企业 | 美国 | 9.0 |
| 3 | CEA-Leti | 科研机构 | 法国 | 5.7 |
| 存储技术 | 1 | 三星 | 领军企业 | 韩国 | 9.9 |
| 2 | IMEC | 科研机构 | 比利时 | 8.2 |
| 3 | 台积电 | 领军企业 | 中国台湾 | 6.3 |
| 工艺及先进集成和封装技术 | 1 | 英特尔 | 领军企业 | 美国 | 11.4 |
| 2 | IMEC | 科研机构 | 比利时 | 10.0 |
| 3 | 台积电 | 领军企业 | 中国台湾 | 9.0 |
| 机器学习技术 | 1 | IBM | 领军企业 | 美国 | 8.4 |
| 2 | 清华大学 | 研究型大学 | 中国大陆 | 8.4 |
| 3 | 韩国科学技术院 | 研究型大学 | 韩国 | 5.8 |
), ArticleFig(id=1241718242612408978, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=EN, label=null, caption=null, figureFileSmall=null, figureFileBig=null, tableContent=
| 技术类别 | 序号 | 机构名称 | 机构性质 | 所在国家(地区) | 文章占比/% |
| FinFET技术 | 1 | IMEC | 科研机构 | 比利时 | 18.2 |
| 2 | 三星 | 领军企业 | 韩国 | 13.6 |
| 3 | IBM | 领军企业 | 美国 | 9.1 |
| GAA器件技术 | 1 | IMEC | 科研机构 | 比利时 | 25.0 |
| 2 | IBM | 领军企业 | 美国 | 13.5 |
| 3 | 台湾大学 | 研究型大学 | 中国台湾 | 17.3 |
| 高迁移率沟道技术 | 1 | IBM | 领军企业 | 美国 | 16.7 |
| 2 | 麻省理工学院 | 研究型大学 | 美国 | 14.3 |
| 3 | 东京大学 | 研究型大学 | 日本 | 13.1 |
| 二维材料技术 | 1 | IMEC | 科研机构 | 比利时 | 13.5 |
| 2 | 台积电 | 领军企业 | 中国台湾 | 13.5 |
| 低功耗器件技术 | 1 | IBM | 领军企业 | 美国 | 10.7 |
| 2 | 台湾阳明交通大学 | 研究型大学 | 中国台湾 | 8.9 |
| 3 | 台湾半导体研究中心 | 科研机构 | 中国台湾 | 8.9 |
| CFET器件技术 | 1 | IMEC | 科研机构 | 比利时 | 38.5 |
| 2 | CEA-Leti | 科研机构 | 法国 | 30.8 |
| 量子器件技术 | 1 | CEA-Leti | 科研机构 | 法国 | 17.5 |
| 2 | IMEC | 科研机构 | 比利时 | 11.1 |
| 3 | 代尔夫特理工大学 | 研究型大学 | 荷兰 | 11.1 |
), ArticleFig(id=1241718242696295059, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1241718216150536513, language=CN, label=表3, caption=
FinFET技术等领域的代表性机构
, figureFileSmall=null, figureFileBig=null, tableContent=
| 技术类别 | 序号 | 机构名称 | 机构性质 | 所在国家(地区) | 文章占比/% |
| FinFET技术 | 1 | IMEC | 科研机构 | 比利时 | 18.2 |
| 2 | 三星 | 领军企业 | 韩国 | 13.6 |
| 3 | IBM | 领军企业 | 美国 | 9.1 |
| GAA器件技术 | 1 | IMEC | 科研机构 | 比利时 | 25.0 |
| 2 | IBM | 领军企业 | 美国 | 13.5 |
| 3 | 台湾大学 | 研究型大学 | 中国台湾 | 17.3 |
| 高迁移率沟道技术 | 1 | IBM | 领军企业 | 美国 | 16.7 |
| 2 | 麻省理工学院 | 研究型大学 | 美国 | 14.3 |
| 3 | 东京大学 | 研究型大学 | 日本 | 13.1 |
| 二维材料技术 | 1 | IMEC | 科研机构 | 比利时 | 13.5 |
| 2 | 台积电 | 领军企业 | 中国台湾 | 13.5 |
| 低功耗器件技术 | 1 | IBM | 领军企业 | 美国 | 10.7 |
| 2 | 台湾阳明交通大学 | 研究型大学 | 中国台湾 | 8.9 |
| 3 | 台湾半导体研究中心 | 科研机构 | 中国台湾 | 8.9 |
| CFET器件技术 | 1 | IMEC | 科研机构 | 比利时 | 38.5 |
| 2 | CEA-Leti | 科研机构 | 法国 | 30.8 |
| 量子器件技术 | 1 | CEA-Leti | 科研机构 | 法国 | 17.5 |
| 2 | IMEC | 科研机构 | 比利时 | 11.1 |
| 3 | 代尔夫特理工大学 | 研究型大学 | 荷兰 | 11.1 |
)], attaches=null, journal=Journal(id=1129340393107079197, delFlag=0, nameCn=前瞻科技, nameEn=Science and Technology Foresight, nameHistory1=null, nameHistory2=null, issn=2097-0781, eissn=, cn=10-1786/N, coden=null, periodic=2, language=CN, oaType=null, ccby=null, superviseOffice=null, ownerOffice=null, pubOffice=null, editorOffice=null, officeType=null, aims=null, clcCode=null, officeProv=null, officeCity=null, officeAddr=null, officeZip=null, officeEmail=null, officePhone=null, editDirector=null, officeDirector=null, officeDirectorPhone=null, officeStaffNum=null, officeEmpNum=null, coverPicUrl=ti95jJIJzXaf02YNe1UF2A==, journalPrice=null, startedYear=null, abbrevIsoEn=Sci Technol Fore, journalRemark=null, publicationField=null, createdTime=null, updatedTime=1757931223825, createdBy=null, updatedBy=15831073675, firstLetterCn=S, firstLetterEn=S, subjectCode=Natural Sciences, subjectName=自然科学, subjectCodeEn=Natural Sciences, subjectNameEn=null, picCn=ti95jJIJzXaf02YNe1UF2A==, picEn=cuGsq8KPhoqtfsQROuZvoQ==, jcr=null, cjcr=null, exts=[JournalExt(id=1174411930946125939, language=CN, name=前瞻科技, nameHistory1=null, nameHistory2=null, managedBy=, sponsoredBy=, publishedBy=, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=null, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.qianzhankeji.cn/CN/2097-0781/home.shtml, createdTime=1757931223856, updatedTime=1757931223856, createdBy=15831073675, updatedBy=15831073675, submissionGuidelinesUrl=http://www.qianzhankeji.cn/CN/column/column7.shtml, submissionAuthorUrl=https://qzkjauthor.cast.org.cn/webm/, submissionEditorUrl=https://qzkjeditor.cast.org.cn/webm/, submissionReviewUrl=https://qzkjauthor.cast.org.cn/webm/, submissionCeEditorUrl=https://qzkjeditor.cast.org.cn/webm/, submissionAeEditorUrl=https://qzkjeditor.cast.org.cn/webm/, option={"copyright":""}), JournalExt(id=1174411931076149364, language=EN, name=Science and Technology Foresight, nameHistory1=null, nameHistory2=null, managedBy=, sponsoredBy=, publishedBy=, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=null, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.qianzhankeji.cn/EN/2097-0781/home.shtml, createdTime=1757931223887, updatedTime=1757931223887, createdBy=15831073675, updatedBy=15831073675, submissionGuidelinesUrl=http://www.qianzhankeji.cn/EN/column/column7.shtml, submissionAuthorUrl=https://qzkjauthor.manuscriptcloud.com/login, submissionEditorUrl=https://qzkjeditor.manuscriptcloud.com/login, submissionReviewUrl=https://qzkjauthor.manuscriptcloud.com/login, submissionCeEditorUrl=https://qzkjeditor.manuscriptcloud.com/login, submissionAeEditorUrl=https://qzkjeditor.manuscriptcloud.com/login, option={"copyright":""})], databaseList=null, tenantJournalId=1146032081894723586, websiteList=[Website(id=1148243202353652128, webName=null, webTitle=null, webDomain=null, webCopyrigh=null, webIpcNo=null, seoTitle=null, seoKeywords=null, seoDescription=null, tenantJournalId=null, journalId=1146032081894723586, journalNameCn=null, journalNameEn=null, grayFlag=null, tenantId=1146029695717560320, platformId=null, journalGroupId=null, journalGroupNameCn=null, journalGroupNameEn=null, type=1, domain=https://castjournals.cast.org.cn/joweb/qzkj/CN, language=CN, createTime=1751692112768, createBy=18614031015, updateTime=1753516254852, updateBy=18614031015, name=《前瞻科技》中文站点, tplId=1146099689490845704, title=前瞻科技, delFlag=0, indexPage=/home, props=[WebsiteProps(id=1148618977242275853, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=articleTextType, value=kx, createTime=1751781704483, updateTime=1751781704483, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618977217110026, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=banner, value=null, createTime=1751781704477, updateTime=1751781704477, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618977204527113, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=logo, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic?fileId=skpCN5mVIzgEJbdUXu8/8A==, createTime=1751781704474, updateTime=1751781704474, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618977233887244, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=picServerUrl, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic, createTime=1751781704481, updateTime=1751781704481, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618977225498635, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=staticResourcePath, value=https://castjournals.cast.org.cn/joweb/cast_kjdb_cn_619/, createTime=1751781704479, updateTime=1751781704479, creator=18614031015, updator=18614031015)]), Website(id=1155894377965830154, webName=null, webTitle=null, webDomain=null, webCopyrigh=null, webIpcNo=null, seoTitle=null, seoKeywords=null, seoDescription=null, tenantJournalId=null, journalId=1146032081894723586, journalNameCn=null, journalNameEn=null, grayFlag=null, tenantId=1146029695717560320, platformId=null, journalGroupId=null, journalGroupNameCn=null, journalGroupNameEn=null, type=1, domain=https://castjournals.cast.org.cn/joweb/qzkj/EN, language=EN, createTime=1753516295187, createBy=18614031015, updateTime=1753516295187, updateBy=18614031015, name=《前瞻科技》英文站点, tplId=1146101810881728533, title=Science and Technology Foresight, delFlag=0, indexPage=/home, props=[WebsiteProps(id=1155894740970233959, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=articleTextType, value=kx, createTime=1753516381733, updateTime=1753516381733, creator=18614031015, updator=18614031015), WebsiteProps(id=1155894740953456740, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=banner, value=null, createTime=1753516381729, updateTime=1753516381729, creator=18614031015, updator=18614031015), WebsiteProps(id=1155894740945068131, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=logo, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic?fileId=skpCN5mVIzgEJbdUXu8/8A==, createTime=1753516381727, updateTime=1753516381727, creator=18614031015, updator=18614031015), WebsiteProps(id=1155894740966039654, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=picServerUrl, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic, createTime=1753516381732, updateTime=1753516381732, creator=18614031015, updator=18614031015), WebsiteProps(id=1155894740961845349, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=staticResourcePath, value=https://castjournals.cast.org.cn/joweb/cast_kjdb_cn_619/, createTime=1753516381731, updateTime=1753516381731, creator=18614031015, updator=18614031015)])], journalTitle=前瞻科技, weixinUrl=null, journalUrl=null, iacademicId=null, status=0, seqNo=null, journalTitleEn=Science and Technology Foresight, journalPhotoCn=ti95jJIJzXaf02YNe1UF2A==, journalPhotoEn=cuGsq8KPhoqtfsQROuZvoQ==, journalFirstLetter=S, journalRecommend=null, journalNew=null, journalCollection=null, jcrJf=null, cjcrJf=null, jcrJfStr=null, cjcrJfStr=null, submissionFirstDecision=null, sciSubjectClassification=null, casSubjectClassification=null, citeScore=null, totalCitationFrequency=null, icpCode=null, psCode=null, advertisingLicenseCode=null, copyrightInformation=null, country=null, option=, provinceCode=null, provinceName=null, collectFlag=false), detailUrlCn=https://castjournals.cast.org.cn/joweb/qzkj/CN/10.3981/j.issn.2097-0781.2022.03.001, detailUrlEn=https://castjournals.cast.org.cn/joweb/qzkj/EN/10.3981/j.issn.2097-0781.2022.03.001, pdfUrlCn=https://castjournals.cast.org.cn/joweb/qzkj/CN/PDF/10.3981/j.issn.2097-0781.2022.03.001, pdfUrlEn=https://castjournals.cast.org.cn/joweb/qzkj/EN/PDF/10.3981/j.issn.2097-0781.2022.03.001, aliStartDate=null, aliEndDate=null, collectionFlag=false, citedCount=null, citedUrl=null, reference=null)