Article(id=1148708269444621203, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1148708265585865399, articleNumber=null, orderNo=null, doi=10.3981/j.issn.2097-0781.2025.01.004, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1736438400000, receivedDateStr=2025-01-10, revisedDate=1739808000000, revisedDateStr=2025-02-18, acceptedDate=null, acceptedDateStr=null, onlineDate=1751802993403, onlineDateStr=2025-07-06, pubDate=1742400000000, pubDateStr=2025-03-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1743004800000, onlineIssueDateStr=2025-03-27, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1751802993403, creator=13701087609, updateTime=1774072694110, updator=sys-migrate, issue=Issue{id=1148708265585865399, tenantId=1146029695717560320, journalId=1146032081894723586, year='2025', volume='4', issue='1', pageStart='100', pageEnd='167', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=1, createTime=1751802992481, creator=13701087609, updateTime=1776075019034, updator=13041195026, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1250512523708023313, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1148708265585865399, language=EN, specialIssueTitle=, coverIllustrator=, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1250512523708023314, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1148708265585865399, language=CN, specialIssueTitle=新材料前沿：技术创新与未来展望专刊, coverIllustrator=, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=36, endPage=48, ext={EN=ArticleExt(id=1149664176777376290, articleId=1148708269444621203, tenantId=1146029695717560320, journalId=1146032081894723586, language=EN, title=Research Progress and Development Recommendations on Quantum Devices Based on Two-Dimensional Atomic Crystal Heterostructures, columnId=1149656489310208610, journalTitle=Science and Technology Foresight, columnName=Review and Commentary, runingTitle=null, highlight=null, articleAbstract=

Focusing on two-dimensional atomic crystal heterostructures and devices, this paper first provids a brief analysis of the emerging applications of nanotechnology and quantum technology of various countries in this field. It then systematically introduces the major experimental results and scientific progress in this field, analyzes the challenges faced by current two-dimensional atomic crystal quantum devices, and offers recommendations for the development of materials and circuits for future quantum computing and quantum precision measurement. Finally, the paper draws conclusions and predicted the future trend of current quantum devices based on two-dimensional atomic crystal heterostructures, providing a reference for subsequent research on quantum devices based on two-dimensional atomic crystal heterostructures.

, correspAuthors=Xiaoxi LI, authorNote=null, correspAuthorsNote=
†
, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, authorCompany=null, fund=null, authors=null, authorsList=Xiaoxi LI, Zheng Vitto HAN), CN=ArticleExt(id=1148708280307868097, articleId=1148708269444621203, tenantId=1146029695717560320, journalId=1146032081894723586, language=CN, title=二维原子晶体异质结量子器件研究进展及发展建议, columnId=1148708266483446458, journalTitle=前瞻科技, columnName=综述与述评, runingTitle=null, highlight=null, articleAbstract=

概述了全球在二维原子晶体异质结材料和器件领域，纳米电子技术和量子技术的应用探索。系统介绍了该领域近期的主要实验成果和科学进展，分析当前二维原子晶体量子器件面临的挑战，对未来的量子计算用材料或电路支撑及量子精密测量的发展提出建议。最后展望了二维原子晶体异质结量子器件的发展趋势，以期为后续研究提供参考。

, correspAuthors=李小茜, authorNote=null, correspAuthorsNote=
†
, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=CfWZmp8sm+GLygfrmTT1Aw==, magXml=eMmhlez7NScrcjvU3c9YkQ==, pdfUrl=null, pdf=RvMMThSvrInYQ+wjPGLKdg==, pdfFileSize=6986289, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=mtHg1+za8gf6z5GCKtyQ/w==, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=ugqpmCFP6g+zddq6lX/+AA==, mapNumber=null, authorCompany=null, fund=null, authors=

李小茜，山西大学光电研究所特聘副教授，辽宁材料实验室兼聘研究员。主要从事新型二维纳米人工复合体系研究。在Science、Nature Communications等期刊发表多篇论文。电子信箱：。

, authorsList=李小茜, 韩拯)}, authors=[Author(id=1242114257513414897, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=xiaoxili1987@sxu.edu.cn, emailSecond=null, emailThird=null, correspondingAuthor=1, authorType=1, ext={EN=AuthorExt(id=1242114257630855413, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, authorId=1242114257513414897, language=EN, stringName=Xiaoxi LI, firstName=Xiaoxi, middleName=null, lastName=LI, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=1, 2, 3, †, address=1. State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China
2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
3. Liaoning Academy of Materials, Shenyang 110167, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1242114257697964278, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, authorId=1242114257513414897, language=CN, stringName=李小茜, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=1, 2, 3, †, address=1.山西大学光电研究所，光量子技术与器件全国重点实验室，太原 030006
2.山西大学极端光学协同创新中心，太原 030006
3.辽宁材料实验室，沈阳 110167, bio={"img":"adqYMfUL6LrOaubAZVF66Q==","content":"

李小茜，山西大学光电研究所特聘副教授，辽宁材料实验室兼聘研究员。主要从事新型二维纳米人工复合体系研究。在Science、Nature Communications等期刊发表多篇论文。电子信箱：。

"}, bioImg=adqYMfUL6LrOaubAZVF66Q==, bioContent=

李小茜，山西大学光电研究所特聘副教授，辽宁材料实验室兼聘研究员。主要从事新型二维纳米人工复合体系研究。在Science、Nature Communications等期刊发表多篇论文。电子信箱：。

, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1242114257278533863, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, xref=null, ext=[AuthorCompanyExt(id=1242114257286922472, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257278533863, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=1. State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China), AuthorCompanyExt(id=1242114257295311081, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257278533863, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=1.山西大学光电研究所，光量子技术与器件全国重点实验室，太原 030006)]), AuthorCompany(id=1242114257366614250, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, xref=null, ext=[AuthorCompanyExt(id=1242114257375002859, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257366614250, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China), AuthorCompanyExt(id=1242114257383391468, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257366614250, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=2.山西大学极端光学协同创新中心，太原 030006)]), AuthorCompany(id=1242114257450500333, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, xref=null, ext=[AuthorCompanyExt(id=1242114257454694638, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257450500333, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=3. Liaoning Academy of Materials, Shenyang 110167, China), AuthorCompanyExt(id=1242114257463083247, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257450500333, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=3.辽宁材料实验室，沈阳 110167)])]), Author(id=1242114257760878840, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, orderNo=1, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=null, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1242114257857347836, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, authorId=1242114257760878840, language=EN, stringName=Zheng Vitto HAN, firstName=Zheng Vitto, middleName=null, lastName=HAN, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=1, 2, 3, address=1. State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China
2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
3. Liaoning Academy of Materials, Shenyang 110167, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1242114257924456701, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, authorId=1242114257760878840, language=CN, stringName=韩拯, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=1, 2, 3, address=1.山西大学光电研究所，光量子技术与器件全国重点实验室，太原 030006
2.山西大学极端光学协同创新中心，太原 030006
3.辽宁材料实验室，沈阳 110167, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null)}, companyList=[AuthorCompany(id=1242114257278533863, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, xref=null, ext=[AuthorCompanyExt(id=1242114257286922472, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257278533863, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=1. State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China), AuthorCompanyExt(id=1242114257295311081, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257278533863, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=1.山西大学光电研究所，光量子技术与器件全国重点实验室，太原 030006)]), AuthorCompany(id=1242114257366614250, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, xref=null, ext=[AuthorCompanyExt(id=1242114257375002859, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257366614250, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China), AuthorCompanyExt(id=1242114257383391468, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257366614250, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=2.山西大学极端光学协同创新中心，太原 030006)]), AuthorCompany(id=1242114257450500333, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, xref=null, ext=[AuthorCompanyExt(id=1242114257454694638, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257450500333, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=3. Liaoning Academy of Materials, Shenyang 110167, China), AuthorCompanyExt(id=1242114257463083247, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257450500333, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=3.辽宁材料实验室，沈阳 110167)])])], keywords=[Keyword(id=1242114258071257342, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, orderNo=1, keyword=two-dimensional atomic crystal), Keyword(id=1242114258138366207, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, orderNo=2, keyword=two-dimensional heterostructure), Keyword(id=1242114258213863680, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, orderNo=3, keyword=micro- and nano-electronics), Keyword(id=1242114258289361153, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, orderNo=4, keyword=quantum device), Keyword(id=1242114258356470018, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, orderNo=1, keyword=二维原子晶体), Keyword(id=1242114258431967491, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, orderNo=2, keyword=二维异质结), Keyword(id=1242114258499076356, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, orderNo=3, keyword=微纳电子学), Keyword(id=1242114258561990917, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, orderNo=4, keyword=量子器件)], refs=[Reference(id=1242114261644804377, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1038/s41565-017-0035-5, pmid=29410499, pmcid=null, year=2018, volume=13, issue=3, pageStart=246, pageEnd=252, url=null, language=null, rfNumber=[1], rfOrder=0, authorNames=Mounet N, Gibertini M, Schwaller P, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Mounet N, Gibertini M, Schwaller P, et al. Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds[J]. Nature Nanotechnology, 2018, 13(3): 246-252., articleTitle=Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds, refAbstract=Two-dimensional (2D) materials have emerged as promising candidates for next-generation electronic and optoelectronic applications. Yet, only a few dozen 2D materials have been successfully synthesized or exfoliated. Here, we search for 2D materials that can be easily exfoliated from their parent compounds. Starting from 108,423 unique, experimentally known 3D compounds, we identify a subset of 5,619 compounds that appear layered according to robust geometric and bonding criteria. High-throughput calculations using van der Waals density functional theory, validated against experimental structural data and calculated random phase approximation binding energies, further allowed the identification of 1,825 compounds that are either easily or potentially exfoliable. In particular, the subset of 1,036 easily exfoliable cases provides novel structural prototypes and simple ternary compounds as well as a large portfolio of materials to search from for optimal properties. For a subset of 258 compounds, we explore vibrational, electronic, magnetic and topological properties, identifying 56 ferromagnetic and antiferromagnetic systems, including half-metals and half-semiconductors.), Reference(id=1242114261711913242, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1126/science.1102896, pmid=15499015, pmcid=null, year=2004, volume=306, issue=5696, pageStart=666, pageEnd=669, url=null, language=null, rfNumber=[2], rfOrder=1, authorNames=Novoselov K S, Geim A K, Morozov S V, journalName=Science, refType=null, unstructuredReference=Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films[J]. 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The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10(13) per square centimeter and with room-temperature mobilities of approximately 10,000 square centimeters per volt-second can be induced by applying gate voltage.), Reference(id=1242114261779022107, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2010, volume=5, issue=10, pageStart=699, pageEnd=700, url=null, language=null, rfNumber=[3], rfOrder=2, authorNames=Weitz R T, Yacoby A, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Weitz R T, Yacoby A. Graphene rests easy[J]. Nature Nanotechnology, 2010, 5(10): 699-700., articleTitle=Graphene rests easy, refAbstract=null), Reference(id=1242114261846130972, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1038/nnano.2010.172, pmid=20729834, pmcid=null, year=2010, volume=5, issue=10, pageStart=722, pageEnd=726, url=null, language=null, rfNumber=[4], rfOrder=3, authorNames=Dean C R, Young A F, Meric I, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Dean C R, Young A F, Meric I, et al. Boron nitride substrates for high-quality graphene electronics[J]. Nature Nanotechnology, 2010, 5(10): 722-726., articleTitle=Boron nitride substrates for high-quality graphene electronics, refAbstract=Graphene devices on standard SiO(2) substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. Although suspending the graphene above the substrate leads to a substantial improvement in device quality, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved with a suspended sample. Hexagonal boron nitride (h-BN) is an appealing substrate, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps. It also has a lattice constant similar to that of graphite, and has large optical phonon modes and a large electrical bandgap. Here we report the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal h-BN substrates, by using a mechanical transfer process. Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2). These devices also show reduced roughness, intrinsic doping and chemical reactivity. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics and allows for the realization of more complex graphene heterostructures.), Reference(id=1242114261909045533, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1038/nnano.2010.279, pmid=21278752, pmcid=null, year=2011, volume=6, issue=3, pageStart=147, pageEnd=150, url=null, language=null, rfNumber=[5], rfOrder=4, authorNames=Radisavljevic B, Radenovic A, Brivio J, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Radisavljevic B, Radenovic A, Brivio J, et al. Single-layer MoS2 transistors[J]. Nature Nanotechnology, 2011, 6(3): 147-150., articleTitle=Single-layer MoS2 transistors, refAbstract=Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.), Reference(id=1242114261992931614, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1038/nnano.2016.42, pmid=27018659, pmcid=null, year=2016, volume=11, issue=7, pageStart=593, pageEnd=597, url=null, language=null, rfNumber=[6], rfOrder=5, authorNames=Li L K, Yang F Y, Ye G J, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Li L K, Yang F Y, Ye G J, et al. Quantum Hall effect in black phosphorus two-dimensional electron system[J]. Nature Nanotechnology, 2016, 11(7): 593-597., articleTitle=Quantum Hall effect in black phosphorus two-dimensional electron system, refAbstract=The development of new, high-quality functional materials has been at the forefront of condensed-matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the materials base of two-dimensional electron systems (2DESs). Here, we report the observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES. The high quality is achieved by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DES and brings the carrier Hall mobility up to 6,000 cm(2) V(-1) s(-1). The exceptional mobility enabled us to observe the quantum Hall effect and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.), Reference(id=1242114262055846175, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2018, volume=30, issue=2, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[7], rfOrder=6, authorNames=Ares P, Palacios J J, Abellán G, journalName=Advanced Materials, refType=null, unstructuredReference=Ares P, Palacios J J, Abellán G, et al. Recent progress on antimonene: A new bidimensional material[J]. Advanced Materials, 2018, 30(2): 1703771, doi: org/10.1002/adma.201703771., articleTitle=Recent progress on antimonene: A new bidimensional material, refAbstract=null), Reference(id=1242114262118760736, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2019, volume=363, issue=6428, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[8], rfOrder=7, authorNames=Gong C, Zhang X, journalName=Science, refType=null, unstructuredReference=Gong C, Zhang X. Two-dimensional magnetic crystals and emergent heterostructure devices[J]. Science, 2019, 363(6428): eaav4450, doi: 10.1126/science.aav4450., articleTitle=Two-dimensional magnetic crystals and emergent heterostructure devices, refAbstract=null), Reference(id=1242114262190063905, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2021, volume=33, issue=13, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[9], rfOrder=8, authorNames=Qi L, Ruan S C, Zeng Y J, journalName=Advanced Materials, refType=null, unstructuredReference=Qi L, Ruan S C, Zeng Y J. Review on recent developments in 2D ferroelectrics: Theories and applications[J]. Advanced Materials, 2021, 33(13): e2005098, doi: 10.1002/adma.202005098., articleTitle=Review on recent developments in 2D ferroelectrics: Theories and applications, refAbstract=null), Reference(id=1242114262248784162, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2020, volume=29, issue=9, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[10], rfOrder=9, authorNames=Dong B J, Yang T, Han Z, journalName=Chinese Physics B, refType=null, unstructuredReference=Dong B J, Yang T, Han Z. Flattening is flattering: The revolutionizing 2D electronic systems[J]. Chinese Physics B, 2020, 29(9): 97307, doi: 10.1088/1674-1056/aba605., articleTitle=Flattening is flattering: The revolutionizing 2D electronic systems, refAbstract=null), Reference(id=1242114262311698723, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2012, volume=8, issue=null, pageStart=382, pageEnd=386, url=null, language=null, rfNumber=[11], rfOrder=10, authorNames=Yankowitz M, Xue J M, Cormode D, journalName=Nature Physics, refType=null, unstructuredReference=Yankowitz M, Xue J M, Cormode D, et al. Emergence of superlattice Dirac points in graphene on hexagonal boron nitride[J]. Nature Physics, 2012, 8: 382-386., articleTitle=Emergence of superlattice Dirac points in graphene on hexagonal boron nitride, refAbstract=null), Reference(id=1242114262374613284, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2013, volume=497, issue=7451, pageStart=594, pageEnd=597, url=null, language=null, rfNumber=[12], rfOrder=11, authorNames=Ponomarenko L A, Gorbachev R V, Yu G L, journalName=Nature, refType=null, unstructuredReference=Ponomarenko L A, Gorbachev R V, Yu G L, et al. Cloning of Dirac fermions in graphene superlattices[J]. Nature, 2013, 497(7451): 594-597., articleTitle=Cloning of Dirac fermions in graphene superlattices, refAbstract=null), Reference(id=1242114262437527845, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1073/pnas.1108174108, pmid=21730173, pmcid=null, year=2011, volume=108, issue=30, pageStart=12233, pageEnd=12237, url=null, language=null, rfNumber=[13], rfOrder=12, authorNames=Bistritzer R, MacDonald A H, journalName=Proceedings of the National Academy of Sciences of the United States of America, refType=null, unstructuredReference=Bistritzer R, MacDonald A H. Moire bands in twisted double-layer graphene[J]. Proceedings of the National Academy of Sciences of the United States of America, 2011, 108(30): 12233-12237., articleTitle=Moire bands in twisted double-layer graphene, refAbstract=A moiré pattern is formed when two copies of a periodic pattern are overlaid with a relative twist. We address the electronic structure of a twisted two-layer graphene system, showing that in its continuum Dirac model the moiré pattern periodicity leads to moiré Bloch bands. The two layers become more strongly coupled and the Dirac velocity crosses zero several times as the twist angle is reduced. For a discrete set of magic angles the velocity vanishes, the lowest moiré band flattens, and the Dirac-point density-of-states and the counterflow conductivity are strongly enhanced.), Reference(id=1242114262496248102, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2016, volume=117, issue=11, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[14], rfOrder=13, authorNames=Cao Y, Luo J Y, Fatemi V, journalName=Physical Review Letters, refType=null, unstructuredReference=Cao Y, Luo J Y, Fatemi V, et al. Superlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene[J]. Physical Review Letters, 2016, 117(11): 116804, doi: 10.1103/PhysRevLett.117.116804., articleTitle=Superlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene, refAbstract=null), Reference(id=1242114262546579751, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2018, volume=556, issue=7699, pageStart=43, pageEnd=50, url=null, language=null, rfNumber=[15], rfOrder=14, authorNames=Cao Y, Fatemi V, Fang S A, journalName=Nature, refType=null, unstructuredReference=Cao Y, Fatemi V, Fang S A, et al. Unconventional superconductivity in magic-angle graphene superlattices[J]. Nature, 2018, 556(7699): 43-50., articleTitle=Unconventional superconductivity in magic-angle graphene superlattices, refAbstract=null), Reference(id=1242114262613688616, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2025, volume=637, issue=8047, pageStart=839, pageEnd=845, url=null, language=null, rfNumber=[16], rfOrder=15, authorNames=Guo Y J, Pack J, Swann J, journalName=Nature, refType=null, unstructuredReference=Guo Y J, Pack J, Swann J, et al. Superconductivity in 5.0° twisted bilayer WSe2[J]. Nature, 2025, 637(8047): 839-845., articleTitle=Superconductivity in 5.0° twisted bilayer WSe2, refAbstract=null), Reference(id=1242114262680797481, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2017, volume=550, issue=7675, pageStart=229, pageEnd=233, url=null, language=null, rfNumber=[17], rfOrder=16, authorNames=Kang K, Lee K H, Han Y M, journalName=Nature, refType=null, unstructuredReference=Kang K, Lee K H, Han Y M, et al. Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures[J]. Nature, 2017, 550(7675): 229-233., articleTitle=Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures, refAbstract=null), Reference(id=1242114262743712042, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2021, volume=591, issue=7850, pageStart=385, pageEnd=390, url=null, language=null, rfNumber=[18], rfOrder=17, authorNames=Zhao B, Wan Z, Liu Y, journalName=Nature, refType=null, unstructuredReference=Zhao B, Wan Z, Liu Y, et al. High-order superlattices by rolling up van der Waals heterostructures[J]. Nature, 2021, 591(7850): 385-390., articleTitle=High-order superlattices by rolling up van der Waals heterostructures, refAbstract=null), Reference(id=1242114262806626603, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2024, volume=632, issue=8026, pageStart=782, pageEnd=787, url=null, language=null, rfNumber=[19], rfOrder=18, authorNames=Liu C, Wang X Z, Shen C, journalName=Nature, refType=null, unstructuredReference=Liu C, Wang X Z, Shen C, et al. A hot-emitter transistor based on stimulated emission of heated carriers[J]. Nature, 2024, 632(8026): 782-787., articleTitle=A hot-emitter transistor based on stimulated emission of heated carriers, refAbstract=null), Reference(id=1242114262877929772, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1038/s41565-021-00963-8, pmid=34475559, pmcid=null, year=2021, volume=16, issue=11, pageStart=1201, pageEnd=1207, url=null, language=null, rfNumber=[20], rfOrder=19, authorNames=Li T T, Guo W, Ma L, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Li T T, Guo W, Ma L, et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire[J]. Nature Nanotechnology, 2021, 16(11): 1201-1207., articleTitle=Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire, refAbstract=Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore's law beyond silicon. However, despite extensive efforts, the growth of wafer-scale TMDC single crystals on scalable and industry-compatible substrates has not been well demonstrated. Here we demonstrate the epitaxial growth of 2 inch (~50 mm) monolayer molybdenum disulfide (MoS) single crystals on a C-plane sapphire. We designed the miscut orientation towards the A axis (C/A) of sapphire, which is perpendicular to the standard substrates. Although the change of miscut orientation does not affect the epitaxial relationship, the resulting step edges break the degeneracy of nucleation energy for the antiparallel MoS domains and lead to more than a 99% unidirectional alignment. A set of microscopies, spectroscopies and electrical measurements consistently showed that the MoS is single crystalline and has an excellent wafer-scale uniformity. We fabricated field-effect transistors and obtained a mobility of 102.6 cm V s and a saturation current of 450 μA μm, which are among the highest for monolayer MoS. A statistical analysis of 160 field-effect transistors over a centimetre scale showed a >94% device yield and a 15% variation in mobility. We further demonstrated the single-crystalline MoSe on C/A sapphire. Our method offers a general and scalable route to produce TMDC single crystals towards future electronics.© 2021. The Author(s), under exclusive licence to Springer Nature Limited.), Reference(id=1242114262940844333, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2023, volume=613, issue=7943, pageStart=274, pageEnd=279, url=null, language=null, rfNumber=[21], rfOrder=20, authorNames=Li W S, Gong X S, Yu Z H, journalName=Nature, refType=null, unstructuredReference=Li W S, Gong X S, Yu Z H, et al. Approaching the quantum limit in two-dimensional semiconductor contacts[J]. Nature, 2023, 613(7943): 274-279., articleTitle=Approaching the quantum limit in two-dimensional semiconductor contacts, refAbstract=null), Reference(id=1242114263012147502, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2018, volume=557, issue=7707, pageStart=696, pageEnd=700, url=null, language=null, rfNumber=[22], rfOrder=21, authorNames=Liu Y, Guo J, Zhu E B, journalName=Nature, refType=null, unstructuredReference=Liu Y, Guo J, Zhu E B, et al. Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions[J]. Nature, 2018, 557(7707): 696-700., articleTitle=Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions, refAbstract=null), Reference(id=1242114263070867759, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1126/science.aaw3780, pmid=31346139, pmcid=null, year=2019, volume=365, issue=6453, pageStart=605, pageEnd=608, url=null, language=null, rfNumber=[23], rfOrder=22, authorNames=Sharpe A L, Fox E J, Barnard A W, journalName=Science, refType=null, unstructuredReference=Sharpe A L, Fox E J, Barnard A W, et al. Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene[J]. Science, 2019, 365(6453): 605-608., articleTitle=Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene, refAbstract=When two sheets of graphene are stacked at a small twist angle, the resulting flat superlattice minibands are expected to strongly enhance electron-electron interactions. Here, we present evidence that near three-quarters ([Formula: see text]) filling of the conduction miniband, these enhanced interactions drive the twisted bilayer graphene into a ferromagnetic state. In a narrow density range around an apparent insulating state at [Formula: see text], we observe emergent ferromagnetic hysteresis, with a giant anomalous Hall (AH) effect as large as 10.4 kilohms and indications of chiral edge states. Notably, the magnetization of the sample can be reversed by applying a small direct current. Although the AH resistance is not quantized, and dissipation is present, our measurements suggest that the system may be an incipient Chern insulator.Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.), Reference(id=1242114264538874160, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1126/science.aay5533, pmid=31857492, pmcid=null, year=2020, volume=367, issue=6480, pageStart=900, pageEnd=903, url=null, language=null, rfNumber=[24], rfOrder=23, authorNames=Serlin M, Tschirhart C L, Polshyn H, journalName=Science, refType=null, unstructuredReference=Serlin M, Tschirhart C L, Polshyn H, et al. Intrinsic quantized anomalous Hall effect in a moiré heterostructure[J]. Science, 2020, 367(6480): 900-903., articleTitle=Intrinsic quantized anomalous Hall effect in a moiré heterostructure, refAbstract=The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.), Reference(id=1242114264610177329, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2022, volume=13, issue=1, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[25], rfOrder=24, authorNames=Niu R R, Li Z X, Han X Y, journalName=Nature Communications, refType=null, unstructuredReference=Niu R R, Li Z X, Han X Y, et al. Giant ferroelectric polarization in a bilayer graphene heterostructure[J]. Nature Communications, 2022, 13(1): 6241, doi: 10.1038/s41467-022-34104-z., articleTitle=Giant ferroelectric polarization in a bilayer graphene heterostructure, refAbstract=null), Reference(id=1242114264668897586, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2021, volume=600, issue=7890, pageStart=641, pageEnd=646, url=null, language=null, rfNumber=[26], rfOrder=25, authorNames=Li T X, Jiang S W, Shen B W, journalName=Nature, refType=null, unstructuredReference=Li T X, Jiang S W, Shen B W, et al. Quantum anomalous Hall effect from intertwined moiré bands[J]. Nature, 2021, 600(7890): 641-646., articleTitle=Quantum anomalous Hall effect from intertwined moiré bands, refAbstract=null), Reference(id=1242114264727617843, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2024, volume=132, issue=3, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[27], rfOrder=26, authorNames=Wang C, Zhang X W, Liu X, journalName=Physical Review Letters, refType=null, unstructuredReference=Wang C, Zhang X W, Liu X, et al. Fractional Chern insulator in twisted bilayer MoTe2[J]. Physical Review Letters, 2024, 132(3): 036501, doi:10.1103/PhysRevLett.132.036501., articleTitle=Fractional Chern insulator in twisted bilayer MoTe2, refAbstract=null), Reference(id=1242114264807309620, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2023, volume=null, issue=null, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[28], rfOrder=27, authorNames=Lu Z G, Han T H, Yao Y X, journalName=arXiv preprint: 2309.17436, refType=null, unstructuredReference=Lu Z G, Han T H, Yao Y X, et al. Fractional quantum anomalous Hall effect in a graphene moire superlattice[DB/OL]. arXiv preprint: 2309.17436, 2023., articleTitle=Fractional quantum anomalous Hall effect in a graphene moire superlattice, refAbstract=null), Reference(id=1242114264874418485, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1038/s41578-019-0136-x, pmid=null, pmcid=null, year=2019, volume=4, issue=null, pageStart=669, pageEnd=684, url=null, language=null, rfNumber=[29], rfOrder=28, authorNames=Liu X L, Hersam M C, journalName=Nature Reviews Materials, refType=null, unstructuredReference=Liu X L, Hersam M C. 2D materials for quantum information science[J]. Nature Reviews Materials, 2019, 4: 669-684., articleTitle=2D materials for quantum information science, refAbstract=The transformation of digital computers from bulky machines to portable systems has been enabled by new materials and advanced processing technologies that allow ultrahigh integration of solid-state electronic switching devices. As this conventional scaling pathway has approached atomic-scale dimensions, the constituent nanomaterials (such as SiO2 gate dielectrics, poly-Si floating gates and Co-Cr-Pt ferromagnetic alloys) increasingly possess properties that are dominated by quantum physics. In parallel, quantum information science has emerged as an alternative to conventional transistor technology, promising new paradigms in computation, communication and sensing. The convergence between quantum materials properties and prototype quantum devices is especially apparent in the field of 2D materials, which offer a broad range of materials properties, high flexibility in fabrication pathways and the ability to form artificial states of quantum matter. In this Review, we discuss the quantum properties and potential of 2D materials as solid-state platforms for quantum-dot qubits, single-photon emitters, superconducting qubits and topological quantum computing elements. By focusing on the interplay between quantum physics and materials science, we identify key opportunities and challenges for the use of 2D materials in the field of quantum information science.), Reference(id=1242114264949915958, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2023, volume=13, issue=null, pageStart=031037, pageEnd=null, url=null, language=null, rfNumber=[30], rfOrder=29, authorNames=Xu F, Sun Z, Jia T T, journalName=Physical Review X, refType=null, unstructuredReference=Xu F, Sun Z, Jia T T, et al. Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2[J]. Physical Review X, 2023, 13: 031037, doi: 10.1103/PhysRevX.13.031037., articleTitle=Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2, refAbstract=null), Reference(id=1242114265008636215, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2024, volume=631, issue=8020, pageStart=300, pageEnd=306, url=null, language=null, rfNumber=[31], rfOrder=30, authorNames=Li C S, Xu F, Li B H, journalName=Nature, refType=null, unstructuredReference=Li C S, Xu F, Li B H, et al. Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene[J]. Nature, 2024, 631(8020): 300-306., articleTitle=Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene, refAbstract=null), Reference(id=1242114265075745080, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1126/science.adj8272, pmid=38662836, pmcid=null, year=2024, volume=384, issue=6694, pageStart=414, pageEnd=419, url=null, language=null, rfNumber=[32], rfOrder=31, authorNames=Sha Y T, Zheng J, Liu K, journalName=Science, refType=null, unstructuredReference=Sha Y T, Zheng J, Liu K, et al. Observation of a Chern insulator in crystalline ABCA-tetralayer graphene with spin-orbit coupling[J]. Science, 2024, 384(6694): 414-419., articleTitle=Observation of a Chern insulator in crystalline ABCA-tetralayer graphene with spin-orbit coupling, refAbstract=Degeneracies in multilayer graphene, including spin, valley, and layer degrees of freedom, can be lifted by Coulomb interactions, resulting in rich broken-symmetry states. Here, we report a ferromagnetic state in charge-neutral ABCA-tetralayer graphene driven by proximity-induced spin-orbit coupling from adjacent tungsten diselenide. The ferromagnetic state is identified as a Chern insulator with a Chern number of 4; its maximum Hall resistance reaches 78% quantization at zero magnetic field and is fully quantized at either 0.4 or -1.5 tesla. Three distinct broken-symmetry insulating states, layer-antiferromagnet, Chern insulator, and layer-polarized insulator, along with their transitions, can be continuously tuned by the vertical displacement field. In this system, the magnetic order of the Chern insulator can be switched by three knobs, including magnetic field, electrical doping, and vertical displacement field.), Reference(id=1242114265138659641, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2024, volume=15, issue=1, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[33], rfOrder=32, authorNames=Zhou W Q, Ding J, Hua J N, journalName=Nature Communications, refType=null, unstructuredReference=Zhou W Q, Ding J, Hua J N, et al. Layer-polarized ferromagnetism in rhombohedral multilayer graphene[J]. Nature Communications, 2024, 15(1): 2597, doi: 10.1038/s41467-024-46913-5., articleTitle=Layer-polarized ferromagnetism in rhombohedral multilayer graphene, refAbstract=null), Reference(id=1242114265205768506, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1126/science.adq2977, pmid=39480948, pmcid=null, year=2024, volume=386, issue=6721, pageStart=526, pageEnd=531, url=null, language=null, rfNumber=[34], rfOrder=33, authorNames=Huang S Y, Yu B Y, Ma Y X, journalName=Science, refType=null, unstructuredReference=Huang S Y, Yu B Y, Ma Y X, et al. Bright dipolar excitons in twisted black phosphorus homostructures[J]. Science, 2024, 386(6721): 526-531., articleTitle=Bright dipolar excitons in twisted black phosphorus homostructures, refAbstract=Bright dipolar excitons, which contain electrical dipoles and have high oscillator strength, are an ideal platform for studying correlated quantum phenomena. They usually rely on carrier tunneling between two quantum wells or two layers to hybridize with nondipolar excitons to gain oscillator strength. In this work, we uncovered a new type of bright infrared dipolar exciton by stacking 90°-twisted black phosphorus (BP) structures. These excitons, inherent to the reconstructed band structure, exhibit high oscillator strength. Most importantly, they inherit the linear polarization from BP, which allows light polarization to be used to select the dipole direction. Moreover, the dipole moment and resonance energy can be widely tuned by the thickness of the BP. Our results demonstrate a useful platform for exploring tunable correlated dipolar excitons.), Reference(id=1242114265281265979, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1038/s41565-024-01698-y, pmid=38965346, pmcid=null, year=2024, volume=19, issue=7, pageStart=962, pageEnd=969, url=null, language=null, rfNumber=[35], rfOrder=34, authorNames=Chen M Y, Xie Y Q, Cheng B, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Chen M Y, Xie Y Q, Cheng B, et al. Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing[J]. Nature Nanotechnology, 2024, 19(7): 962-969., articleTitle=Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing, refAbstract=Quantum materials exhibit dissipationless topological edge state transport with quantized Hall conductance, offering notable potential for fault-tolerant computing technologies. However, the development of topological edge state-based computing devices remains a challenge. Here we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices, showcasing a proof-of-concept demonstration in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly aligned h-BN layers and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. The observed ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By tuning the amplitude of the gate voltage pulses, we achieve ferroelectric switching between any pair of Chern insulating states in the presence of a finite magnetic field, resulting in 1,280 ferroelectric states with distinguishable Hall resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of ferroelectric states. This unique switching capability enables the implementation of a convolutional neural network resistant to external noise, utilizing the quantized Hall conductance levels of the Chern insulator device as weights. Our study provides a promising avenue towards the development of topological quantum neuromorphic computing, where functionality and performance can be drastically enhanced by topological quantum materials.© 2024. The Author(s), under exclusive licence to Springer Nature Limited.), Reference(id=1242114265348374844, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2024, volume=15, issue=1, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[36], rfOrder=35, authorNames=Ding J, Xiang H X, Zhou W Q, journalName=Nature Communications, refType=null, unstructuredReference=Ding J, Xiang H X, Zhou W Q, et al. Engineering band structures of two-dimensional materials with remote moiré ferroelectricity[J]. Nature Communications, 2024, 15(1): 9087, doi: 10.1038/s41467-024-53440-w., articleTitle=Engineering band structures of two-dimensional materials with remote moiré ferroelectricity, refAbstract=null), Reference(id=1242114265411289405, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2023, volume=131, issue=25, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[37], rfOrder=36, authorNames=Wu F F, Xu Q L, Wang Q Q, journalName=Physical Review Letters, refType=null, unstructuredReference=Wu F F, Xu Q L, Wang Q Q, et al. Giant correlated gap and possible room-temperature correlated states in twisted bilayer MoS2[J]. Physical Review Letters, 2023, 131(25): 256201, doi: 10.1103/PhysRevLett.131.256201., articleTitle=Giant correlated gap and possible room-temperature correlated states in twisted bilayer MoS2, refAbstract=null), Reference(id=1242114265470009662, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2018, volume=1, issue=null, pageStart=130, pageEnd=136, url=null, language=null, rfNumber=[38], rfOrder=37, authorNames=Wang M, Cai S H, Pan C, journalName=Nature Electronics, refType=null, unstructuredReference=Wang M, Cai S H, Pan C, et al. Robust memristors based on layered two-dimensional materials[J]. Nature Electronics, 2018, 1: 130-136., articleTitle=Robust memristors based on layered two-dimensional materials, refAbstract=null), Reference(id=1242114265537118527, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2022, volume=6, issue=4, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[39], rfOrder=38, authorNames=Tang W H, Zhang X K, Yu H H, journalName=Small Methods, refType=null, unstructuredReference=Tang W H, Zhang X K, Yu H H, et al. A van der waals ferroelectric tunnel junction for ultrahigh-temperature operation memory[J]. Small Methods, 2022, 6(4): e2101583, doi: 10.1002/smtd.202101583., articleTitle=A van der waals ferroelectric tunnel junction for ultrahigh-temperature operation memory, refAbstract=null), Reference(id=1242114265612616000, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2023, volume=19, issue=null, pageStart=372, pageEnd=378, url=null, language=null, rfNumber=[40], rfOrder=39, authorNames=Tao R, Li L, Xie H Y, journalName=Nature Physics, refType=null, unstructuredReference=Tao R, Li L, Xie H Y, et al. Josephson-Coulomb drag effect between graphene and a LaAlO3/SrTiO3 superconductor[J]. Nature Physics, 2023, 19: 372-378., articleTitle=Josephson-Coulomb drag effect between graphene and a LaAlO3/SrTiO3 superconductor, refAbstract=null), Reference(id=1242114265683919169, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2024, volume=19, issue=10, pageStart=1452, pageEnd=1459, url=null, language=null, rfNumber=[41], rfOrder=40, authorNames=Wang J Y, Huang J W, Kaplan D, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Wang J Y, Huang J W, Kaplan D, et al. Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect[J]. Nature Nanotechnology, 2024, 19(10): 1452-1459., articleTitle=Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect, refAbstract=null), Reference(id=1242114265742639426, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2024, volume=7, issue=null, pageStart=1117, pageEnd=1125, url=null, language=null, rfNumber=[42], rfOrder=41, authorNames=Zhao S W, Huang J Q, Crépel V, journalName=Nature Electronics, refType=null, unstructuredReference=Zhao S W, Huang J Q, Crépel V, et al. Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors[J]. Nature Electronics, 2024, 7: 1117-1125., articleTitle=Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors, refAbstract=null), Reference(id=1242114265813942595, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1126/science.adh1506, pmid=37384701, pmcid=null, year=2023, volume=380, issue=6652, pageStart=1367, pageEnd=1372, url=null, language=null, rfNumber=[43], rfOrder=42, authorNames=Hu Q Y, Zhan Z, Cui H Y, journalName=Science, refType=null, unstructuredReference=Hu Q Y, Zhan Z, Cui H Y, et al. Observation of rydberg moiré excitons[J]. Science, 2023, 380(6652): 1367-1372., articleTitle=Observation of rydberg moiré excitons, refAbstract=Rydberg excitons, the solid-state counterparts of Rydberg atoms, have sparked considerable interest with regard to the harnessing of their quantum application potentials, but realizing their spatial confinement and manipulation poses a major challenge. Lately, the rise of two-dimensional moiré superlattices with highly tunable periodic potentials provides a possible pathway. Here, we experimentally demonstrate this capability through the spectroscopic evidence of Rydberg moiré excitons (X), which are moiré-trapped Rydberg excitons in monolayer semiconductor tungsten diselenide adjacent to twisted bilayer graphene. In the strong coupling regime, the X manifest as multiple energy splittings, pronounced red shift, and narrowed linewidth in the reflectance spectra, highlighting their charge-transfer character wherein electron-hole separation is enforced by strongly asymmetric interlayer Coulomb interactions. Our findings establish the excitonic Rydberg states as candidates for exploitation in quantum technologies.), Reference(id=1242114265893634372, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2022, volume=609, issue=7927, pageStart=479, pageEnd=484, url=null, language=null, rfNumber=[44], rfOrder=43, authorNames=Li Q, Cheng B, Chen M Y, journalName=Nature, refType=null, unstructuredReference=Li Q, Cheng B, Chen M Y, et al. Tunable quantum criticalities in an isospin extended Hubbard model simulator[J]. Nature, 2022, 609(7927): 479-484., articleTitle=Tunable quantum criticalities in an isospin extended Hubbard model simulator, refAbstract=null), Reference(id=1242114265952354629, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2023, volume=19, issue=null, pageStart=87, pageEnd=91, url=null, language=null, rfNumber=[45], rfOrder=44, authorNames=Healey A J, Scholten S C, Yang T, journalName=Nature Physics, refType=null, unstructuredReference=Healey A J, Scholten S C, Yang T, et al. Quantum microscopy with van der Waals heterostructures[J]. Nature Physics, 2023, 19: 87-91., articleTitle=Quantum microscopy with van der Waals heterostructures, refAbstract=null), Reference(id=1242114266032046406, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2024, volume=632, issue=8027, pageStart=1038, pageEnd=1044, url=null, language=null, rfNumber=[46], rfOrder=45, authorNames=Tang H N, Wang Y T, Ni X Q, journalName=Nature, refType=null, unstructuredReference=Tang H N, Wang Y T, Ni X Q, et al. On-chip multi-degree-of-freedom control of two-dimensional materials[J]. Nature, 2024, 632(8027): 1038-1044., articleTitle=On-chip multi-degree-of-freedom control of two-dimensional materials, refAbstract=null), Reference(id=1242114266082378055, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2022, volume=11, issue=1, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[47], rfOrder=46, authorNames=Zhang T Y, Wang H W, Xia X X, journalName=Light, Science & Applications, refType=null, unstructuredReference=Zhang T Y, Wang H W, Xia X X, et al. A monolithically sculpted van der Waals nano-opto-electro-mechanical coupler[J]. Light, Science & Applications, 2022, 11(1): 48, doi: 10.1038/s41377-022-00734-7., articleTitle=A monolithically sculpted van der Waals nano-opto-electro-mechanical coupler, refAbstract=null), Reference(id=1242114266162069832, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2017, volume=3, issue=10, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[48], rfOrder=47, authorNames=Zhang Z Z, Song X X, Luo G, journalName=Science Advances, refType=null, unstructuredReference=Zhang Z Z, Song X X, Luo G, et al. Electrotunable artificial molecules based on van der Waals heterostructures[J]. Science Advances, 2017, 3(10): e1701699, doi: 10.1126/sciadv.1701699., articleTitle=Electrotunable artificial molecules based on van der Waals heterostructures, refAbstract=null), Reference(id=1242114266216595785, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2022, volume=17, issue=11, pageStart=1153, pageEnd=1158, url=null, language=null, rfNumber=[49], rfOrder=48, authorNames=Butseraen G, Ranadive A, Aparicio N, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Butseraen G, Ranadive A, Aparicio N, et al. A gate-tunable graphene Josephson parametric amplifier[J]. Nature Nanotechnology, 2022, 17(11): 1153-1158., articleTitle=A gate-tunable graphene Josephson parametric amplifier, refAbstract=null), Reference(id=1242114266287898954, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2022, volume=17, issue=11, pageStart=1147, pageEnd=1152, url=null, language=null, rfNumber=[50], rfOrder=49, authorNames=Sarkar J, Salunkhe K V, Mandal S, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Sarkar J, Salunkhe K V, Mandal S, et al. Quantum-noise-limited microwave amplification using a graphene Josephson junction[J]. Nature Nanotechnology, 2022, 17(11): 1147-1152., articleTitle=Quantum-noise-limited microwave amplification using a graphene Josephson junction, refAbstract=null), Reference(id=1242114266346619211, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=10.1038/s41565-018-0329-2, pmid=30598526, pmcid=null, year=2019, volume=14, issue=2, pageStart=120, pageEnd=125, url=null, language=null, rfNumber=[51], rfOrder=50, authorNames=Wang J I, Rodan-Legrain D, Bretheau L, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Wang J I, Rodan-Legrain D, Bretheau L, et al. Coherent control of a hybrid superconducting circuit made with graphene-based van der Waals heterostructures[J]. Nature Nanotechnology, 2019, 14(2): 120-125., articleTitle=Coherent control of a hybrid superconducting circuit made with graphene-based van der Waals heterostructures, refAbstract=Quantum coherence and control is foundational to the science and engineering of quantum systems. In van der Waals materials, the collective coherent behaviour of carriers has been probed successfully by transport measurements. However, temporal coherence and control, as exemplified by manipulating a single quantum degree of freedom, remains to be verified. Here we demonstrate such coherence and control of a superconducting circuit incorporating graphene-based Josephson junctions. Furthermore, we show that this device can be operated as a voltage-tunable transmon qubit, whose spectrum reflects the electronic properties of massless Dirac fermions travelling ballistically. In addition to the potential for advancing extensible quantum computing technology, our results represent a new approach to studying van der Waals materials using microwave photons in coherent quantum circuits.), Reference(id=1242114266405339468, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=null, pmcid=null, year=2022, volume=17, issue=12, pageStart=1272, pageEnd=1279, url=null, language=null, rfNumber=[52], rfOrder=51, authorNames=Wang Y N, Gao X, Yang K N, journalName=Nature Nanotechnology, refType=null, unstructuredReference=Wang Y N, Gao X, Yang K N, et al. Quantum Hall phase in graphene engineered by interfacial charge coupling[J]. Nature Nanotechnology, 2022, 17(12): 1272-1279., articleTitle=Quantum Hall phase in graphene engineered by interfacial charge coupling, refAbstract=null), Reference(id=1242114266476642637, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, doi=null, pmid=37689704, pmcid=null, year=2023, volume=14, issue=null, pageStart=5550, pageEnd=null, url=null, language=null, rfNumber=[53], rfOrder=52, authorNames=Lu X, Zhang S H, Wang Y N, journalName=Nature Communications, refType=null, unstructuredReference=Lu X, Zhang S H, Wang Y N, et al. Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures[J]. Nature Communications, 2023, 14: 5550, doi: 10.1038/s41467-023-41293-8., articleTitle=Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures, refAbstract=Graphene has aroused great attention due to the intriguing properties associated with its low-energy Dirac Hamiltonian. When graphene is coupled with a correlated insulating substrate, electronic states that cannot be revealed in either individual layer may emerge in a synergistic manner. Here, we theoretically study the correlated and topological states in Coulomb-coupled and gate-tunable graphene-insulator heterostructures. By electrostatically aligning the electronic bands, charge carriers transferred between graphene and the insulator can yield a long-wavelength electronic crystal at the interface, exerting a superlattice Coulomb potential on graphene and generating topologically nontrivial subbands. This coupling can further boost electron-electron interaction effects in graphene, leading to a spontaneous bandgap formation at the Dirac point and interaction-enhanced Fermi velocity. Reciprocally, the electronic crystal at the interface is substantially stabilized with the help of cooperative interlayer Coulomb coupling. We propose a number of substrate candidates for graphene to experimentally demonstrate these effects.© 2023. Springer Nature Limited.)], funds=[Fund(id=1242114261376368918, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, awardId=12450003, language=CN, fundingSource=国家自然科学基金(12450003), fundOrder=null, country=null), Fund(id=1242114261439283479, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, awardId=62375160, language=CN, fundingSource=国家自然科学基金(62375160), fundOrder=null, country=null), Fund(id=1242114261502198040, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, awardId=92265203, language=CN, fundingSource=国家自然科学基金(92265203), fundOrder=null, country=null)], companyList=[AuthorCompany(id=1242114257278533863, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, xref=null, ext=[AuthorCompanyExt(id=1242114257286922472, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257278533863, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=1. State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China), AuthorCompanyExt(id=1242114257295311081, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257278533863, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=1.山西大学光电研究所，光量子技术与器件全国重点实验室，太原 030006)]), AuthorCompany(id=1242114257366614250, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, xref=null, ext=[AuthorCompanyExt(id=1242114257375002859, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257366614250, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China), AuthorCompanyExt(id=1242114257383391468, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257366614250, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=2.山西大学极端光学协同创新中心，太原 030006)]), AuthorCompany(id=1242114257450500333, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, xref=null, ext=[AuthorCompanyExt(id=1242114257454694638, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257450500333, language=EN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=3. Liaoning Academy of Materials, Shenyang 110167, China), AuthorCompanyExt(id=1242114257463083247, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, companyId=1242114257450500333, language=CN, country=null, province=null, city=null, postcode=null, companyName=null, departmentName=null, remark=3.辽宁材料实验室，沈阳 110167)])], figs=[ArticleFig(id=1242114260130660614, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, label=Fig. 1, caption=Method for direct transfer of metal electrodes onto two-dimensional electronic devices, figureFileSmall=fjJzVQwg+8KdV1M+N8hiOw==, figureFileBig=mtHg1+za8gf6z5GCKtyQ/w==, tableContent=null), ArticleFig(id=1242114260201963783, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, label=图1, caption=直接转移金属电极接触二维电子器件的方法, figureFileSmall=fjJzVQwg+8KdV1M+N8hiOw==, figureFileBig=mtHg1+za8gf6z5GCKtyQ/w==, tableContent=null), ArticleFig(id=1242114260382318856, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, label=Fig. 2, caption=Concept of applying quantized conducting edge states in quantum information processing, figureFileSmall=I5nwSlWXQdIG5Zj9neOfow==, figureFileBig=GUAnfGnE6kKRZd9mrKgAsw==, tableContent=null), ArticleFig(id=1242114260436844809, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, label=图2, caption=量子化导电边界态在量子信息处理应用设想

SC：Superconductivity，超导；TSC：Topological Superconductivity，拓扑超导；σ为编织算子；B为磁场。

, figureFileSmall=I5nwSlWXQdIG5Zj9neOfow==, figureFileBig=GUAnfGnE6kKRZd9mrKgAsw==, tableContent=null), ArticleFig(id=1242114260495565066, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, label=Fig. 3, caption=Fractional quantization of quantum anomalous Hall effect in twisted molybdenum ditelluride systems, figureFileSmall=X4B8zArh/cq5dG/V4DsZ2Q==, figureFileBig=AsrC9OaKcFwwolsv+2wz9w==, tableContent=null), ArticleFig(id=1242114260554285323, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, label=图3, caption=转角碲化钼体系中的分数量子化的量子反常霍尔效应

T为温度；D为垂直电位移场；v为摩尔填充因子；ρxx为霍尔电阻。

, figureFileSmall=X4B8zArh/cq5dG/V4DsZ2Q==, figureFileBig=AsrC9OaKcFwwolsv+2wz9w==, tableContent=null), ArticleFig(id=1242114260621394188, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, label=Fig. 4, caption=Integer quantum Hall effect in few-layer black phosphorus/boron nitride heterostructure devices, figureFileSmall=zUruCVCx0+TJjAUmmE4qQg==, figureFileBig=2k0jV+CNpmd/Lh27uYmxYg==, tableContent=null), ArticleFig(id=1242114260688503053, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, label=图4, caption=少层黑磷/氮化硼异质结器件中的整数量子霍尔效应

Rxx、Rxy分别为横向电阻和霍尔电阻；nH为面载流子浓度。

, figureFileSmall=zUruCVCx0+TJjAUmmE4qQg==, figureFileBig=2k0jV+CNpmd/Lh27uYmxYg==, tableContent=null), ArticleFig(id=1242114260751417614, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, label=Fig. 5, caption=Rydberg moiré excitons in monolayer tungsten selenide, figureFileSmall=hE6m2U8dpaDdNCn8boATJw==, figureFileBig=OcaOBISPEfXQ0fCSfL31wQ==, tableContent=null), ArticleFig(id=1242114260822720783, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, label=图5, caption=单层硒化钨中的里德堡莫尔激子

n为载流子浓度；ns，为满填充载流子浓度；|Eshift|为能量位移幅度；nAA、nAB/BA分别为AA （AB/BA）位置的载流子浓度。

, figureFileSmall=hE6m2U8dpaDdNCn8boATJw==, figureFileBig=OcaOBISPEfXQ0fCSfL31wQ==, tableContent=null), ArticleFig(id=1242114260889829648, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, label=Fig. 6, caption=Application of two-dimensional atomic crystal heterostructures as quantum sensor, figureFileSmall=cK07ARuzlEzBymA4svgqCA==, figureFileBig=W5lHmbNfmxW6GhSa2BANAA==, tableContent=null), ArticleFig(id=1242114260961132817, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, label=图6, caption=二维原子晶体异质结作为量子传感器应用示例

PL：Photoluminescence，光致发光；MW：Microwave，微波；MEMS：微机电系统Microelectromechanical System；SU-8：Styrene-based Ultraviolet Curable Epox，一种光刻胶。

, figureFileSmall=cK07ARuzlEzBymA4svgqCA==, figureFileBig=W5lHmbNfmxW6GhSa2BANAA==, tableContent=null), ArticleFig(id=1242114261040824594, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, label=Fig. 7, caption=Semiconductor quantum dots of two-dimensional atomic crystal of molybdenum disulfide, figureFileSmall=xTboFxgh8VkPCqkhaAYRow==, figureFileBig=W2Exk8h3BOUC+M8C54sUXg==, tableContent=null), ArticleFig(id=1242114261107933459, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, label=图7, caption=硫化钼二维原子晶体半导体量子点

VLB、VRB、VDM分别为不同区域位置的底栅电压；VSD、ISD分别为源漏电压和源漏电流；f为分数峰劈裂，f=2δS/δP；δS为测量得到的顶点间的对焦劈裂；δP为顶点对之间的距离；D、S分别为源极和漏极。

, figureFileSmall=xTboFxgh8VkPCqkhaAYRow==, figureFileBig=W2Exk8h3BOUC+M8C54sUXg==, tableContent=null), ArticleFig(id=1242114261170848020, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=EN, label=Fig. 8, caption=Graphene band reconstruction induced by interface charge order, figureFileSmall=lwpmTHm4qIo21gNPpyE9gA==, figureFileBig=wqYSyqWR1BU3VAilmZ9KSw==, tableContent=null), ArticleFig(id=1242114261237956885, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708269444621203, language=CN, label=图8, caption=界面电荷序导致的石墨烯能带重构, figureFileSmall=lwpmTHm4qIo21gNPpyE9gA==, figureFileBig=wqYSyqWR1BU3VAilmZ9KSw==, tableContent=null)], attaches=null, journal=Journal(id=1129340393107079197, delFlag=0, nameCn=前瞻科技, nameEn=Science and Technology Foresight, nameHistory1=null, nameHistory2=null, issn=2097-0781, eissn=, cn=10-1786/N, coden=null, periodic=2, language=CN, oaType=null, ccby=null, superviseOffice=null, ownerOffice=null, pubOffice=null, editorOffice=null, officeType=null, aims=null, clcCode=null, officeProv=null, officeCity=null, officeAddr=null, officeZip=null, officeEmail=null, officePhone=null, editDirector=null, officeDirector=null, officeDirectorPhone=null, officeStaffNum=null, officeEmpNum=null, coverPicUrl=ti95jJIJzXaf02YNe1UF2A==, journalPrice=null, startedYear=null, abbrevIsoEn=Sci Technol Fore, journalRemark=null, publicationField=null, createdTime=null, updatedTime=1757931223825, createdBy=null, updatedBy=15831073675, firstLetterCn=S, firstLetterEn=S, subjectCode=Natural Sciences, subjectName=自然科学, subjectCodeEn=Natural Sciences, subjectNameEn=null, picCn=ti95jJIJzXaf02YNe1UF2A==, picEn=cuGsq8KPhoqtfsQROuZvoQ==, jcr=null, cjcr=null, exts=[JournalExt(id=1174411930946125939, language=CN, name=前瞻科技, nameHistory1=null, nameHistory2=null, managedBy=, sponsoredBy=, publishedBy=, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=null, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.qianzhankeji.cn/CN/2097-0781/home.shtml, createdTime=1757931223856, updatedTime=1757931223856, createdBy=15831073675, updatedBy=15831073675, submissionGuidelinesUrl=http://www.qianzhankeji.cn/CN/column/column7.shtml, submissionAuthorUrl=https://qzkjauthor.cast.org.cn/webm/, submissionEditorUrl=https://qzkjeditor.cast.org.cn/webm/, submissionReviewUrl=https://qzkjauthor.cast.org.cn/webm/, submissionCeEditorUrl=https://qzkjeditor.cast.org.cn/webm/, submissionAeEditorUrl=https://qzkjeditor.cast.org.cn/webm/, option={"copyright":""}), JournalExt(id=1174411931076149364, language=EN, name=Science and Technology Foresight, nameHistory1=null, nameHistory2=null, managedBy=, sponsoredBy=, publishedBy=, editorOffice=, officeProv=null, officeCity=null, officeAddr=, officeZip=, editDirector=null, officeDirector=null, officePhone=null, coverPicUrl=null, journalRemark=, submitArticleUrl=null, websiteUrl=http://www.qianzhankeji.cn/EN/2097-0781/home.shtml, createdTime=1757931223887, updatedTime=1757931223887, createdBy=15831073675, updatedBy=15831073675, submissionGuidelinesUrl=http://www.qianzhankeji.cn/EN/column/column7.shtml, submissionAuthorUrl=https://qzkjauthor.manuscriptcloud.com/login, submissionEditorUrl=https://qzkjeditor.manuscriptcloud.com/login, submissionReviewUrl=https://qzkjauthor.manuscriptcloud.com/login, submissionCeEditorUrl=https://qzkjeditor.manuscriptcloud.com/login, submissionAeEditorUrl=https://qzkjeditor.manuscriptcloud.com/login, option={"copyright":""})], databaseList=null, tenantJournalId=1146032081894723586, websiteList=[Website(id=1148243202353652128, webName=null, webTitle=null, webDomain=null, webCopyrigh=null, webIpcNo=null, seoTitle=null, seoKeywords=null, seoDescription=null, tenantJournalId=null, journalId=1146032081894723586, journalNameCn=null, journalNameEn=null, grayFlag=null, tenantId=1146029695717560320, platformId=null, journalGroupId=null, journalGroupNameCn=null, journalGroupNameEn=null, type=1, domain=https://castjournals.cast.org.cn/joweb/qzkj/CN, language=CN, createTime=1751692112768, createBy=18614031015, updateTime=1753516254852, updateBy=18614031015, name=《前瞻科技》中文站点, tplId=1146099689490845704, title=前瞻科技, delFlag=0, indexPage=/home, props=[WebsiteProps(id=1148618977242275853, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=articleTextType, value=kx, createTime=1751781704483, updateTime=1751781704483, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618977217110026, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=banner, value=null, createTime=1751781704477, updateTime=1751781704477, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618977204527113, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=logo, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic?fileId=skpCN5mVIzgEJbdUXu8/8A==, createTime=1751781704474, updateTime=1751781704474, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618977233887244, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=picServerUrl, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic, createTime=1751781704481, updateTime=1751781704481, creator=18614031015, updator=18614031015), WebsiteProps(id=1148618977225498635, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1148243202353652128, code=staticResourcePath, value=https://castjournals.cast.org.cn/joweb/cast_kjdb_cn_619/, createTime=1751781704479, updateTime=1751781704479, creator=18614031015, updator=18614031015)]), Website(id=1155894377965830154, webName=null, webTitle=null, webDomain=null, webCopyrigh=null, webIpcNo=null, seoTitle=null, seoKeywords=null, seoDescription=null, tenantJournalId=null, journalId=1146032081894723586, journalNameCn=null, journalNameEn=null, grayFlag=null, tenantId=1146029695717560320, platformId=null, journalGroupId=null, journalGroupNameCn=null, journalGroupNameEn=null, type=1, domain=https://castjournals.cast.org.cn/joweb/qzkj/EN, language=EN, createTime=1753516295187, createBy=18614031015, updateTime=1753516295187, updateBy=18614031015, name=《前瞻科技》英文站点, tplId=1146101810881728533, title=Science and Technology Foresight, delFlag=0, indexPage=/home, props=[WebsiteProps(id=1155894740970233959, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=articleTextType, value=kx, createTime=1753516381733, updateTime=1753516381733, creator=18614031015, updator=18614031015), WebsiteProps(id=1155894740953456740, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=banner, value=null, createTime=1753516381729, updateTime=1753516381729, creator=18614031015, updator=18614031015), WebsiteProps(id=1155894740945068131, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=logo, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic?fileId=skpCN5mVIzgEJbdUXu8/8A==, createTime=1753516381727, updateTime=1753516381727, creator=18614031015, updator=18614031015), WebsiteProps(id=1155894740966039654, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=picServerUrl, value=https://castjournals.cast.org.cn/joweb/kjdb/CN/file/pic, createTime=1753516381732, updateTime=1753516381732, creator=18614031015, updator=18614031015), WebsiteProps(id=1155894740961845349, tenantId=1146029695717560320, journalId=null, journalGroupId=null, siteId=1155894377965830154, code=staticResourcePath, value=https://castjournals.cast.org.cn/joweb/cast_kjdb_cn_619/, createTime=1753516381731, updateTime=1753516381731, creator=18614031015, updator=18614031015)])], journalTitle=前瞻科技, weixinUrl=null, journalUrl=null, iacademicId=null, status=0, seqNo=null, journalTitleEn=Science and Technology Foresight, journalPhotoCn=ti95jJIJzXaf02YNe1UF2A==, journalPhotoEn=cuGsq8KPhoqtfsQROuZvoQ==, journalFirstLetter=S, journalRecommend=null, journalNew=null, journalCollection=null, jcrJf=null, cjcrJf=null, jcrJfStr=null, cjcrJfStr=null, submissionFirstDecision=null, sciSubjectClassification=null, casSubjectClassification=null, citeScore=null, totalCitationFrequency=null, icpCode=null, psCode=null, advertisingLicenseCode=null, copyrightInformation=null, country=null, option=, provinceCode=null, provinceName=null, collectFlag=false), detailUrlCn=https://castjournals.cast.org.cn/joweb/qzkj/CN/10.3981/j.issn.2097-0781.2025.01.004, detailUrlEn=https://castjournals.cast.org.cn/joweb/qzkj/EN/10.3981/j.issn.2097-0781.2025.01.004, pdfUrlCn=https://castjournals.cast.org.cn/joweb/qzkj/CN/PDF/10.3981/j.issn.2097-0781.2025.01.004, pdfUrlEn=https://castjournals.cast.org.cn/joweb/qzkj/EN/PDF/10.3981/j.issn.2097-0781.2025.01.004, aliStartDate=null, aliEndDate=null, collectionFlag=false, citedCount=null, citedUrl=null, reference=null)
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Research Progress and Development Recommendations on Quantum Devices Based on Two-Dimensional Atomic Crystal Heterostructures
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Xiaoxi LI 1, 2, 3, † , Zheng Vitto HAN 1, 2, 3
Science and Technology Foresight | Review and Commentary 2025,4(1): 36-48
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Science and Technology Foresight | Review and Commentary 2025, 4(1): 36-48
Research Progress and Development Recommendations on Quantum Devices Based on Two-Dimensional Atomic Crystal Heterostructures
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Xiaoxi LI1, 2, 3, † , Zheng Vitto HAN1, 2, 3
Authors
  • 1. State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China
  • 2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
  • 3. Liaoning Academy of Materials, Shenyang 110167, China

Corresponding author:

†
Research Progress and Development Recommendations on Quantum Devices Based on Two-Dimensional Atomic Crystal Heterostructures
Xiaoxi LI1, 2, 3, † , Zheng Vitto HAN1, 2, 3
Affiliations
  • 1. State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China
  • 2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
  • 3. Liaoning Academy of Materials, Shenyang 110167, China
Published: 2025-03-20 doi: 10.3981/j.issn.2097-0781.2025.01.004
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Focusing on two-dimensional atomic crystal heterostructures and devices, this paper first provids a brief analysis of the emerging applications of nanotechnology and quantum technology of various countries in this field. It then systematically introduces the major experimental results and scientific progress in this field, analyzes the challenges faced by current two-dimensional atomic crystal quantum devices, and offers recommendations for the development of materials and circuits for future quantum computing and quantum precision measurement. Finally, the paper draws conclusions and predicted the future trend of current quantum devices based on two-dimensional atomic crystal heterostructures, providing a reference for subsequent research on quantum devices based on two-dimensional atomic crystal heterostructures.

two-dimensional atomic crystal  /  two-dimensional heterostructure  /  micro- and nano-electronics  /  quantum device

Focusing on two-dimensional atomic crystal heterostructures and devices, this paper first provids a brief analysis of the emerging applications of nanotechnology and quantum technology of various countries in this field. It then systematically introduces the major experimental results and scientific progress in this field, analyzes the challenges faced by current two-dimensional atomic crystal quantum devices, and offers recommendations for the development of materials and circuits for future quantum computing and quantum precision measurement. Finally, the paper draws conclusions and predicted the future trend of current quantum devices based on two-dimensional atomic crystal heterostructures, providing a reference for subsequent research on quantum devices based on two-dimensional atomic crystal heterostructures.

two-dimensional atomic crystal  /  two-dimensional heterostructure  /  micro- and nano-electronics  /  quantum device
李小茜, 韩拯. 二维原子晶体异质结量子器件研究进展及发展建议[J]. 前瞻科技, 2025 , 4 (1) : 100 -167 . DOI: 10.3981/j.issn.2097-0781.2025.01.004
Xiaoxi LI, Zheng Vitto HAN. Research Progress and Development Recommendations on Quantum Devices Based on Two-Dimensional Atomic Crystal Heterostructures[J]. Science and Technology Foresight, 2025 , 4 (1) : 100 -167 . DOI: 10.3981/j.issn.2097-0781.2025.01.004
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doi: 10.3981/j.issn.2097-0781.2025.01.004
  • Received：2025-01-10
  • Published：2025-03-20
  • Release：2025-03-27
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  • 收稿日期：2025-01-10
  • 修回日期：2025-02-18
基金
国家自然科学基金(12450003)
国家自然科学基金(62375160)
国家自然科学基金(92265203)
Authors
    1. State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China
    2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
    3. Liaoning Academy of Materials, Shenyang 110167, China

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李小茜, 韩拯. 二维原子晶体异质结量子器件研究进展及发展建议[J]. 前瞻科技, 2025 , 4 (1) : 100 -167 . DOI: 10.3981/j.issn.2097-0781.2025.01.004
Xiaoxi LI, Zheng Vitto HAN. Research Progress and Development Recommendations on Quantum Devices Based on Two-Dimensional Atomic Crystal Heterostructures[J]. Science and Technology Foresight, 2025 , 4 (1) : 100 -167 . DOI: 10.3981/j.issn.2097-0781.2025.01.004
表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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