Article(id=1148708266378588857, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1148708265585865399, articleNumber=null, orderNo=null, doi=10.3981/j.issn.2097-0781.2025.01.003, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=research-article, receivedDate=1734883200000, receivedDateStr=2024-12-23, revisedDate=1739980800000, revisedDateStr=2025-02-20, acceptedDate=null, acceptedDateStr=null, onlineDate=1751802992654, onlineDateStr=2025-07-06, pubDate=1742400000000, pubDateStr=2025-03-20, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1743004800000, onlineIssueDateStr=2025-03-27, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1751802992654, creator=13701087609, updateTime=1774072691023, updator=sys-migrate, issue=Issue{id=1148708265585865399, tenantId=1146029695717560320, journalId=1146032081894723586, year='2025', volume='4', issue='1', pageStart='100', pageEnd='167', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=1, createTime=1751802992481, creator=13701087609, updateTime=1776075019034, updator=13041195026, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1250512523708023313, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1148708265585865399, language=EN, specialIssueTitle=, coverIllustrator=, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1250512523708023314, tenantId=1146029695717560320, journalId=1146032081894723586, issueId=1148708265585865399, language=CN, specialIssueTitle=新材料前沿：技术创新与未来展望专刊, coverIllustrator=, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=28, endPage=35, ext={EN=ArticleExt(id=1149664177104535725, articleId=1148708266378588857, tenantId=1146029695717560320, journalId=1146032081894723586, language=EN, title=Development Status and Prospects of Ultra-wide Bandgap Semiconductor Materials, columnId=1149656489310208610, journalTitle=Science and Technology Foresight, columnName=Review and Commentary, runingTitle=null, highlight=null, articleAbstract=

This paper analyzed the main characteristics and strategic requirements of ultra-wide bandgap semiconductor materials represented by diamond, gallium oxide, aluminum nitride, etc. and systematically reviewed the main technologies and industrial developments of ultra-wide bandgap semiconductor materials in China and abroad. It proposed key technical issues that need to be overcome and development suggestions and provided references for the future development of ultra-wide bandgap semiconductor materials in China.

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文章分析了以金刚石、氧化镓、氮化铝等为代表的超宽禁带半导体材料的主要特点及战略需求，系统梳理了国内外超宽禁带半导体材料的主要技术和产业进展，提出了当前待突破的关键技术问题和发展建议，以期为后续中国超宽禁带半导体材料的发展提供参考。

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赵璐冰，副研究员。第三代半导体产业技术创新战略联盟副秘书长。主要从事第三代半导体产业技术、国家科技规划编制、新型研发机构组建、产学研协同创新、科技成果孵化转化等。电子信箱：zhaolb@china-led.net。

"}, bioImg=lp9bwu5Hy0ZORekuFEmWiQ==, bioContent=

赵璐冰，副研究员。第三代半导体产业技术创新战略联盟副秘书长。主要从事第三代半导体产业技术、国家科技规划编制、新型研发机构组建、产学研协同创新、科技成果孵化转化等。电子信箱：zhaolb@china-led.net。

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A 2-in. mosaic wafer made of a single-crystal diamond[J]. Applied Physics Letters, 2014, 104(10): 102110, doi:10.1063/1.4868720., articleTitle=A 2-in. mosaic wafer made of a single-crystal diamond, refAbstract=null), Reference(id=1242114162294329827, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708266378588857, doi=null, pmid=28294167, pmcid=null, year=2017, volume=7, issue=null, pageStart=44462, pageEnd=null, url=null, language=null, rfNumber=[2], rfOrder=1, authorNames=Schreck M, Gsell S, Brescia R, journalName=Scientific Reports, refType=null, unstructuredReference=Schreck M, Gsell S, Brescia R, et al. Ion bombardment induced buried lateral growth: The key mechanism for the synthesis of single crystal diamond wafers[J]. 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It is shown that a diamond single crystal with a diameter of -90 mm and a weight of 155 carat can be grown from such a carbon film which initially consisted of 2. 10(13) individual grains.), Reference(id=1242114162390798820, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708266378588857, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://news.xjtu.edu.cn/info/1004/216193.htm, language=null, rfNumber=[3], rfOrder=2, authorNames=null, journalName=null, refType=null, unstructuredReference=西安交通大学科研团队成功实现(111)面异质外延单晶金刚石衬底的制备[EB/OL]. (2024-11-20). https://news.xjtu.edu.cn/info/1004/216193.htm., articleTitle=西安交通大学科研团队成功实现(111)面异质外延单晶金刚石衬底的制备, refAbstract=null), Reference(id=1242114162466296293, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708266378588857, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://news.xjtu.edu.cn/info/1004/216193.htm, language=null, rfNumber=[3], rfOrder=3, authorNames=null, journalName=null, refType=null, unstructuredReference=A research team from Xi’an Jiaotong University has successfully prepared a (111) surface heteroepitaxial single crystal diamond substrate[EB/OL]. (2024-11-20). https://news.xjtu.edu.cn/info/1004/216193.htm. (in Chinese), articleTitle=A research team from Xi’an Jiaotong University has successfully prepared a (111) surface heteroepitaxial single crystal diamond substrate, refAbstract=null), Reference(id=1242114162566959590, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708266378588857, doi=null, pmid=null, pmcid=null, year=2024, volume=45, issue=9, pageStart=null, pageEnd=null, url=null, language=null, rfNumber=[4], rfOrder=4, authorNames=Qu P F, Jin P, Zhou G D, journalName=Journal of Semiconductors, refType=null, unstructuredReference=Qu P F, Jin P, Zhou G D, et al. Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si (001) substrates via laser-patterned templates[J]. Journal of Semiconductors, 2024, 45(9): 090501, doi: 10.1088/1674-4926/24060003., articleTitle=Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si (001) substrates via laser-patterned templates, refAbstract=null), Reference(id=1242114162629874151, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708266378588857, doi=null, pmid=null, pmcid=null, year=2024, volume=636, issue=8043, pageStart=627, pageEnd=634, url=null, language=null, rfNumber=[5], rfOrder=5, authorNames=Jing J X, Sun F Q, Wang Z Q, journalName=Nature, refType=null, unstructuredReference=Jing J X, Sun F Q, Wang Z Q, et al. Scalable production of ultraflat and ultraflexible diamond membrane[J]. Nature, 2024, 636(8043): 627-634., articleTitle=Scalable production of ultraflat and ultraflexible diamond membrane, refAbstract=null), Reference(id=1242114162696983016, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708266378588857, doi=null, pmid=null, pmcid=null, year=2021, volume=1, issue=6, pageStart=697, pageEnd=716, url=null, language=null, rfNumber=[6], rfOrder=6, authorNames=Yuan Y, Hao W B, Mu W X, journalName=Fundamental Research, refType=null, unstructuredReference=Yuan Y, Hao W B, Mu W X, et al. Toward emerging gallium oxide semiconductors: A roadmap[J]. 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Nano Letters, 2025, 25(1): 537-544., articleTitle=Ultrawide bandgap diamond/ε-Ga₂O₃ heterojunction pn diodes with breakdown voltages over 3 kV, refAbstract=null), Reference(id=1242114163141579246, tenantId=1146029695717560320, journalId=1146032081894723586, articleId=1148708266378588857, doi=null, pmid=null, pmcid=null, year=null, volume=null, issue=null, pageStart=null, pageEnd=null, url=https://www.cisuvc.com/crystal-is-improves-100mm-substrate/, language=null, rfNumber=[10], rfOrder=12, authorNames=null, journalName=null, refType=null, unstructuredReference=Crystal IS and Asahi Kasei have achieved 99% usable area on 100 mm bulk aluminum nitride substrate[EB/OL]. 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