Article(id=1309639705138913705, tenantId=1146029695717560320, journalId=1189621681917173762, issueId=1309639699476606989, articleNumber=null, orderNo=null, doi=10.19620/j.cnki.1000-3703.20250310, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=null, receivedDateStr=null, revisedDate=1749484800000, revisedDateStr=2025-06-10, acceptedDate=null, acceptedDateStr=null, onlineDate=1790172037634, onlineDateStr=2026-09-23, pubDate=1771862400000, pubDateStr=2026-02-24, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1790172037634, onlineIssueDateStr=2026-09-23, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1790172037634, creator=13701087609, updateTime=1790172037634, updator=13701087609, issue=Issue{id=1309639699476606989, tenantId=1146029695717560320, journalId=1189621681917173762, year='2026', volume='', issue='2', pageStart='1', pageEnd='62', issueExtLink='null', onlineDate='null', pubDate='1771862400000', pubDateStr='2026-02-24', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1790172036284, creator='13701087609', updateTime=1790232907749, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1309895012968661940, tenantId=1146029695717560320, journalId=1189621681917173762, issueId=1309639699476606989, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1309895012968661941, tenantId=1146029695717560320, journalId=1189621681917173762, issueId=1309639699476606989, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=7, endPage=12, ext={EN=ArticleExt(id=1309639705445097899, articleId=1309639705138913705, tenantId=1146029695717560320, journalId=1189621681917173762, language=EN, title=The Reliability Optimization Design of Vehicle Chip Based on Advanced Techonology, columnId=1309639705340240298, journalTitle=Automobile Technology, columnName=Special Topic on Academic Papers at the 28th CAST Annual Meeting: Key Technologies for Automotive-Grade Chip Architecture Improvement and Reliability Optimization, runingTitle=null, highlight=null, articleAbstract=

Based on the SMIC 12 nm Fin Field-Effect Transistor (FinFET) process, this paper analyzes the harmonic distortion and bandwidth performance indicators of the track/hold circuit at the front end of the Analog-to-Digital (A/D) converter. By reasonably selecting the type and size of the track/hold switch, the harmonic distortion caused by the temperature variation of the track/hold switch is reduced, and a new type of switch output buffer is proposed to improve the linearity of the track/hold circuit and the driving capability of the A/D converter. Test results show that: using the gate and parasitic capacitances of N-type Metal-Oxide-Semiconductor (NMOS) and P-type Metal-Oxide-Semiconductor (PMOS) transistors as sampling capacitances, the overall front-end circuit bandwidth is increased to 34 GHz through simulation verification with Cadence Virtuoso; when the sampling frequency fs=10 GHz and the input signal fin=9.8 GHz, the Spurious-Free Dynamic Range (SFDR) and Total Harmonic Distortion (THD) reach 67 dB and -59.5 dB, respectively. The proposed design scheme can be applied to the built-in self-test and self-check safety system of autonomous driving, reducing the failure rate of the autonomous driving system and improving the reliability of the embedded vehicle chip safety mechanism.

, authors=Hongyu Liang1, Xiaoyu Yang1, 2, Zhihua Feng1, Yan Wang1, 3, authorsList=Hongyu Liang, Xiaoyu Yang, Zhihua Feng, Yan Wang, authorCompany=null, correspAuthors=Zhihua Feng, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1309639705705144749, articleId=1309639705138913705, tenantId=1146029695717560320, journalId=1189621681917173762, language=CN, title=基于先进工艺的车载芯片可靠性优化设计, columnId=1309639705524789676, journalTitle=汽车技术, columnName=第二十八届中国科协年会学术论文专题——车规芯片架构改进与可靠性优化关键技术, runingTitle=null, highlight=null, articleAbstract=

基于SMIC 12 nm鳍式场效应晶体管(FinFet)工艺,对模拟/数字(A/D)转换器前端跟踪/保持电路的谐波失真、带宽等性能指标进行了分析。通过合理选取采样开关的类型、尺寸,降低跟踪/保持开关随温度变化引入的谐波失真,提出一种新型的开关输出缓冲器,提升跟踪/保持电路的线性度和A/D转换器的驱动力。试验结果表明,将N型金属氧化物半导体(NMOS)、P型金属氧化物半导体(PMOS)场效晶体管的电容和寄生电容作为采样电容,整体前端电路带宽提升至34 GHz;通过Cadence Virtuoso的仿真验证,当采样频率fs=10 GHz、输入信号频率fin=9.8 GHz时,无杂散动态范围(SFDR)和总谐波失真(THD)分别达到67 dB、-59.5 dB。所提出的设计方案可用于自动驾驶的内置自检安全系统,降低自动驾驶系统故障率,提升嵌入式车载芯片安全机制的可靠性。

, authors=梁宏玉1, 杨潇雨1, 2, 冯治华1, 王妍1, 3, authorsList=梁宏玉, 杨潇雨, 冯治华, 王妍, authorCompany=null, correspAuthors=冯治华, authorNote=null, correspAuthorsNote=
冯治华(1982—),工程师,主要研究方向为集成电路管理,。
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基于先进工艺的车载芯片可靠性优化设计
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梁宏玉 1 , 杨潇雨 1, 2 , 冯治华 1 , 王妍 1, 3
汽车技术 | 第二十八届中国科协年会学术论文专题——车规芯片架构改进与可靠性优化关键技术 2026,(2): 7-12
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汽车技术 |第二十八届中国科协年会学术论文专题——车规芯片架构改进与可靠性优化关键技术 2026 , (2) : 7 -12
基于先进工艺的车载芯片可靠性优化设计
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梁宏玉1, 杨潇雨1, 2, 冯治华1 , 王妍1, 3
作者信息
  • 1.集成电路与微系统全国重点实验室,重庆 400060
  • 2.重庆大学,重庆 400060
  • 3.电子科技大学,成都 611700
通讯作者:
冯治华(1982—),工程师,主要研究方向为集成电路管理,。
The Reliability Optimization Design of Vehicle Chip Based on Advanced Techonology
Hongyu Liang1, Xiaoyu Yang1, 2, Zhihua Feng1 , Yan Wang1, 3
Affiliations
  • 1.National key Laboratory of Integrated Circuit and Microsystems, Chongqing 400060
  • 2.Chongqing University, Chongqing 400060
  • 3.University of Electronic Science and Technology of China, Chengdu 611700
出版时间: 2026-02-24 doi: 10.19620/j.cnki.1000-3703.20250310
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基于SMIC 12 nm鳍式场效应晶体管(FinFet)工艺,对模拟/数字(A/D)转换器前端跟踪/保持电路的谐波失真、带宽等性能指标进行了分析。通过合理选取采样开关的类型、尺寸,降低跟踪/保持开关随温度变化引入的谐波失真,提出一种新型的开关输出缓冲器,提升跟踪/保持电路的线性度和A/D转换器的驱动力。试验结果表明,将N型金属氧化物半导体(NMOS)、P型金属氧化物半导体(PMOS)场效晶体管的电容和寄生电容作为采样电容,整体前端电路带宽提升至34 GHz;通过Cadence Virtuoso的仿真验证,当采样频率fs=10 GHz、输入信号频率fin=9.8 GHz时,无杂散动态范围(SFDR)和总谐波失真(THD)分别达到67 dB、-59.5 dB。所提出的设计方案可用于自动驾驶的内置自检安全系统,降低自动驾驶系统故障率,提升嵌入式车载芯片安全机制的可靠性。

跟踪/保持电路  /  开关输出缓冲器  /  嵌入式车载芯片  /  可靠性

Based on the SMIC 12 nm Fin Field-Effect Transistor (FinFET) process, this paper analyzes the harmonic distortion and bandwidth performance indicators of the track/hold circuit at the front end of the Analog-to-Digital (A/D) converter. By reasonably selecting the type and size of the track/hold switch, the harmonic distortion caused by the temperature variation of the track/hold switch is reduced, and a new type of switch output buffer is proposed to improve the linearity of the track/hold circuit and the driving capability of the A/D converter. Test results show that: using the gate and parasitic capacitances of N-type Metal-Oxide-Semiconductor (NMOS) and P-type Metal-Oxide-Semiconductor (PMOS) transistors as sampling capacitances, the overall front-end circuit bandwidth is increased to 34 GHz through simulation verification with Cadence Virtuoso; when the sampling frequency fs=10 GHz and the input signal fin=9.8 GHz, the Spurious-Free Dynamic Range (SFDR) and Total Harmonic Distortion (THD) reach 67 dB and -59.5 dB, respectively. The proposed design scheme can be applied to the built-in self-test and self-check safety system of autonomous driving, reducing the failure rate of the autonomous driving system and improving the reliability of the embedded vehicle chip safety mechanism.

Tracking/holding circuit  /  Switching output buffer  /  Vehicle chip of the embedded system  /  Reliability
梁宏玉, 杨潇雨, 冯治华, 王妍. 基于先进工艺的车载芯片可靠性优化设计. 汽车技术, 2026 , (2) : 7 -12 . DOI: 10.19620/j.cnki.1000-3703.20250310
Hongyu Liang, Xiaoyu Yang, Zhihua Feng, Yan Wang. The Reliability Optimization Design of Vehicle Chip Based on Advanced Techonology[J]. Automobile Technology, 2026 , (2) : 7 -12 . DOI: 10.19620/j.cnki.1000-3703.20250310

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doi: 10.19620/j.cnki.1000-3703.20250310
  • 首发时间:2026-09-23
  • 出版时间:2026-02-24
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  • 修回日期:2025-06-10
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    1.集成电路与微系统全国重点实验室,重庆 400060
    2.重庆大学,重庆 400060
    3.电子科技大学,成都 611700

通讯作者:

冯治华(1982—),工程师,主要研究方向为集成电路管理,。
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2种不同金属材料的力学参数
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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