Article(id=1242141033329406268, tenantId=1146029695717560320, journalId=1146031591421210625, issueId=1242141030267564334, articleNumber=null, orderNo=null, doi=10.3981/j.issn.1000-7857.2023.11.01709, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1699891200000, receivedDateStr=2023-11-14, revisedDate=1701964800000, revisedDateStr=2023-12-08, acceptedDate=null, acceptedDateStr=null, onlineDate=1716307200000, onlineDateStr=2024-05-22, pubDate=1714233600000, pubDateStr=2024-04-28, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1716307200000, onlineIssueDateStr=2024-05-22, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1774079100207, creator=sys-migrate, updateTime=1774079100207, updator=sys-migrate, issue=Issue{id=1242141030267564334, tenantId=1146029695717560320, journalId=1146031591421210625, year='2024', volume='42', issue='8', pageStart='1', pageEnd='128', issueExtLink='null', onlineDate='null', pubDate='1714233600000', pubDateStr='2024-04-28', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=null, issueType=-1, specialIssue=null, createTime=1774079099476, creator='sys-migrate', updateTime=1774079099476, updator='sys-migrate', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=29, endPage=38, ext={EN=ArticleExt(id=1242141036483522901, articleId=1242141033329406268, tenantId=1146029695717560320, journalId=1146031591421210625, language=EN, title=Development status and future prospect of the wide band-gap semiconductors, columnId=1242141036353499476, journalTitle=Science & Technology Review, columnName=Exclusive：Key Technologies and Innovation Drive, runingTitle=null, highlight=null, articleAbstract=In recent years, the wide band-gap semiconductors endowed with superior performance, particularly the SiC and GaN, have developed rapidly. As the research focuses in the fields of 5G communications, new energy vehicles, rail transit, military equipment, etc, these semiconductors have supported the development of a trillion-level market, and the new application scenarios are constantly emerging to stimulate new development potential. China has established a relatively complete industrial chain, i. e., from the substrate, epitaxy, design, manufacturing, module, testing to the final application. At the same time, the technology and industrialization ability as well as the independent controllable ability continues to be enhanced. Some of the achievements have been applied, and now the "large size and cost reduction" turns to be the main direction of future development. At present, China as the largest application market has launched the strong driving force of application traction for technology innovation. However, the wide band-gap semiconductor industry also faces many challenges, e. g., the industrial ecological development issues. It is an urgent need to take fully advantages of the“two-wheel drive”of application and research and development to realize the rapid transformation of scientific and technological achievements. It is suggested that the continuous support should be enhanced, under the guidance of policies and the traction of new application scenarios, to systematically enrich the product form and to promote the high-quality development of the whole industrial chain for seizing new opportunities of future applications., authors=GAO Shuang, ZHENG Yuting, ZHANG Zhiguo, authorsList=GAO Shuang, ZHENG Yuting, ZHANG Zhiguo, authorCompany=China Electronics Technology Wide BandGap Semiconductors Co., Ltd., Beijing 100041, China, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1242141035795657033, articleId=1242141033329406268, tenantId=1146029695717560320, journalId=1146031591421210625, language=CN, title=第三代半导体发展现状及未来展望, columnId=1242141035682410824, journalTitle=科技导报, columnName=专题：关键技术与创新驱动, runingTitle=null, highlight=null, articleAbstract=在分析第三代半导体重要战略意义的基础上，讨论了中国在相关领域技术和产业化能力的发展状况，阐述了“大尺寸、降成本”是当前碳化硅及氮化镓技术的发展重心，并探讨了第三代半导体行业企业发展模式以及可能存在的问题及风险。尽管中国已具备良好基础，但仍存在不足，建议在国家政策的指导下，以应用牵引实现发展，加大产线的持续支持力度，系统地丰富产品形态，促进第三代半导体产业高质量发展，把握未来应用新机遇。, authors=高爽, 郑宇亭, 张志国, authorsList=高爽, 郑宇亭, 张志国, authorCompany=中电科第三代半导体科技有限公司, 北京 100041, correspAuthors=null, authorNote=高爽,工程师,研究方向为宽禁带半导体产业经济学,电子信箱:wbgs_gaoshuang@126.com, correspAuthorsNote=郑宇亭(通信作者),工程师,研究方向为宽禁带半导体基础,电子信箱:wbgs_zhengyuting@126.com, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=cFcFEPE6dptuI497VhxXCA==, pdfFileSize=732641, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, 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