Article(id=1242140925095392094, tenantId=1146029695717560320, journalId=1146031591421210625, issueId=1242140911858163906, articleNumber=null, orderNo=null, doi=10.3981/j.issn.1000-7857.2024.02.005, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1695312000000, receivedDateStr=2023-09-22, revisedDate=1700064000000, revisedDateStr=2023-11-16, acceptedDate=null, acceptedDateStr=null, onlineDate=1713110400000, onlineDateStr=2024-04-15, pubDate=1706371200000, pubDateStr=2024-01-28, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1713110400000, onlineIssueDateStr=2024-04-15, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1774079074402, creator=sys-migrate, updateTime=1774079074402, updator=sys-migrate, issue=Issue{id=1242140911858163906, tenantId=1146029695717560320, journalId=1146031591421210625, year='2024', volume='42', issue='2', pageStart='1', pageEnd='128', issueExtLink='null', onlineDate='null', pubDate='1706371200000', pubDateStr='2024-01-28', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=null, issueType=-1, specialIssue=null, createTime=1774079071246, creator='sys-migrate', updateTime=1774079071246, updator='sys-migrate', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=50, endPage=57, ext={EN=ArticleExt(id=1242140928891232528, articleId=1242140925095392094, tenantId=1146029695717560320, journalId=1146031591421210625, language=EN, title=Through silicon via filling technologies in superconducting quantum, columnId=1242140920762671341, journalTitle=Science & Technology Review, columnName=Exclusive:Frontier of Chip Technology, runingTitle=null, highlight=null, articleAbstract=Superconducting quantum is one of the leading candidates in the race to build a quantum computer and multi-layer stacking may be the best solution for the superconducting qubits extending. This paper briefly introduces the characteristics of through silicon via (TSV) filling technology in superconducting quantum chips, and expounds and analyzes various filling technology schemes. The full-filling technologies, represented by electroplating and metal melt filling, have the advantages of high reliability and low overall process complexity but poor compatibility with semiconductor technology. The partial-filling technologies, represented by physical vapor deposition, chemical vapor deposition, atomic layer deposition and fast atomic sequential technique, have the advantages of good compatibility with semiconductor technology, but low reliability and high process complexity. And the new materials electroplating processes may be one promising solution in the future., authors=ZHENG Weiwen¹, LUAN Tian^1,2, ZHANG Xiang¹, authorsList=ZHENG Weiwen, LUAN Tian, ZHANG Xiang, authorCompany=1. Yangtze River Delta Industrial Innovation Center for Quantum Technology, Suzhou 215123, China;
2. China Academic of Electronics and Information Technology, Beijing 100041, China, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1242140928358555908, articleId=1242140925095392094, tenantId=1146029695717560320, journalId=1146031591421210625, language=CN, title=超导量子芯片硅穿孔填充技术, columnId=1242140920053833955, journalTitle=科技导报, columnName=专题：芯片前沿技术, runingTitle=null, highlight=null, articleAbstract=超导量子计算是目前最有可能实现实际应用的量子计算方案之一，多层堆叠是实现超导量子比特大规模扩展的最佳方案。介绍了超导量子芯片中硅穿孔（TSV）填充工艺的特点并汇总概括了当前超导TSV填充技术。以电镀和金属熔融填充为代表的完全填充工艺具有器件可靠性高、工艺复杂度低等优点，但与半导体技术兼容性较差；以物理气相沉积、化学气相沉积、原子层沉积和快速原子连续沉积技术为代表的部分填充工艺，具有与半导体技术兼容性好的优点，但器件可靠性低、工艺复杂度高。开发新材料的电镀工艺或许是未来较为可靠的方案。, authors=郑伟文¹, 栾添^1,2, 张祥¹, authorsList=郑伟文, 栾添, 张祥, authorCompany=1. 量子科技长三角产业创新中心, 苏州 215123;
2. 中国电子科学研究院, 北京 100041, correspAuthors=null, authorNote=郑伟文，工程师，研究方向为超导量子芯片工艺，电子信箱：zhengweiwen45@126.com, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=2Fvq1Yo17q8QiOeoDMTEMg==, pdfFileSize=2617527, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=苏州市科技计划项目（ZXL2022424）)}, authors=null, keywords=[Keyword(id=1242140927985262844, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140925095392094, language=CN, orderNo=1, keyword=超导量子), Keyword(id=1242140928064954622, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242140925095392094, language=CN, orderNo=1, keyword=多层堆叠), Keyword(id=1242140928140452095, tenantId=1146029695717560320, journalId=1146031591421210625, 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