Article(id=1242139322061762734, tenantId=1146029695717560320, journalId=1146031591421210625, issueId=1242139306463142588, articleNumber=null, orderNo=14, doi=10.3981/j.issn.1000-7857.2021.14.008, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1596988800000, receivedDateStr=2020-08-10, revisedDate=1612368000000, revisedDateStr=2021-02-04, acceptedDate=null, acceptedDateStr=null, onlineDate=1630991387837, onlineDateStr=2021-09-07, pubDate=1627401600000, pubDateStr=2021-07-28, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1630991387837, onlineIssueDateStr=2021-09-07, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1774078692207, creator=sys-migrate, updateTime=1774078692207, updator=sys-migrate, issue=Issue{id=1242139306463142588, tenantId=1146029695717560320, journalId=1146031591421210625, year='2021', volume='39', issue='14', pageStart='0', pageEnd='172', issueExtLink='null', onlineDate='null', pubDate='1627401600000', pubDateStr='2021-07-28', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=3, issueType=-1, specialIssue=null, createTime=1774078688489, creator='sys-migrate', updateTime=1774078688489, updator='sys-migrate', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=83, endPage=91, ext={EN=ArticleExt(id=1242139324880335054, articleId=1242139322061762734, tenantId=1146029695717560320, journalId=1146031591421210625, language=EN, title=Promote the domestication of the third-generation semiconductor equipment to embrace the dawn of semiconductors and consolidate the new infrastructure, columnId=1242139317506748563, journalTitle=Science & Technology Review, columnName=Exclusive: Innovation and development of the third generation semiconductor, runingTitle=null, highlight=null, articleAbstract=The third-generation semiconductors, with the SiC and the GaN as the representatives, are widely used in the new infrastructure like the 5G base station and the EV charging point. The manufacturing process of the third-generation semiconductor requires high temperature, high energy and low damage, and the related equipment thus has to be modified. The requirements of the process and the related equipment for the third-generation semiconductor are presented. This paper also reviews the domestication of the third-generation semiconductor equipment and offer suggestions for the future, such as we should take the enterprise as the main body and make the collaborative innovation in production, teaching, research and application; focus on equipping the technology in common uses and cultivating the independent part supporting system; strengthen the cultivation of the innovative talents and enhance the potential of the industrial development., authors=WANG Zhiyue¹, GONG Xiaoliang^1,2, FU Binglei³, authorsList=WANG Zhiyue, GONG Xiaoliang, FU Binglei, authorCompany=1. The CETC Electronic Equipment Group Co., Ltd., Beijing 100070, China;
2. The 48 th Institute of CETC, Changsha 410111, China;
3. Huajin Holding Group Co., Ltd., Beijing 100000, China, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=6Ju56Z1ch7dl1DYHqixOmw==, pdfFileSize=2882935, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1242139323823370431, articleId=1242139322061762734, tenantId=1146029695717560320, journalId=1146031591421210625, language=CN, title=扬帆芯未来，助力新基建，大力推进第三代半导体制造装备国产化, columnId=1242139316504306398, journalTitle=科技导报, columnName=专题：第三代半导体的创新发展, runingTitle=null, highlight=null, articleAbstract=第三代半导体以碳化硅、氮化镓等材料为代表，已经在5G基站、新能源汽车充电桩等新基建领域崭露头角。第三代半导体加工工艺具有高温、高能量、低损伤等特点和要求，决定了其制造装备相对通用半导体制造装备具有独特性。综述了第三代半导体制造装备需求及其国产化现状，提出了相关产业发展建议：以企业为主体，产学研用协同创新；着力装备共性技术，培育自主零部件配套体系；加强创新人才培养，增强产业发展后劲。, authors=王志越¹, 巩小亮^1,2, 付丙磊³, authorsList=王志越, 巩小亮, 付丙磊, authorCompany=1. 中电科电子装备集团有限公司, 北京 100070;
2. 中国电子科技集团公司第四十八研究所, 长沙 410111;
3. 华锦控股集团有限公司, 北京 100000, correspAuthors=null, authorNote=王志越,研究员,研究方向为电子专用设备及配套工艺,电子信箱:wangzhy@45inst.com, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=3hqq2tmC+LWmm+IAw9JXaA==, pdfFileSize=2882935, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null)}, authors=null, keywords=[Keyword(id=1242139323521380539, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242139322061762734, language=CN, orderNo=1, keyword=第三代半导体), Keyword(id=1242139323596878012, tenantId=1146029695717560320, journalId=1146031591421210625, articleId=1242139322061762734, language=CN, orderNo=1, keyword=制造装备), Keyword(id=1242139323672375485, tenantId=1146029695717560320, journalId=1146031591421210625, 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