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The properties of several third-generation semiconductors, the main preparation methods of the radiation detectors and the testing progress for different radiations are addressed emphatically, and the development trend of third-generation semiconductors in the radiation detection is also prospected. It is proposed that the emergence of the third generation semiconductor radiation detectors will promote the research of nuclear science, space exploration, particle and high energy physics, and play an important role in promoting the national core competitiveness., authors=LIANG Hongwei, LIAO Chuanwu, XIA Xiaochuan, LONG Ze, GENG Xinlei, NIU Mengchen, HAN Zhongyuan, authorsList=LIANG Hongwei, LIAO Chuanwu, XIA Xiaochuan, LONG Ze, GENG Xinlei, NIU Mengchen, HAN Zhongyuan, authorCompany=School of Microelectronics, Dalian University of Technology, Dalian 116024, China, correspAuthors=null, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=UMhQxjZSVyy6Pa5t6FmALg==, pdfFileSize=1848420, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, 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