科技导报

第三代宽禁带功率半导体及应用发展现状

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科技导报 | 专题：第三代半导体的创新发展 2021,39(14): 42-55

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科技导报 | 专题：第三代半导体的创新发展 2021, 39(14): 42-55

第三代宽禁带功率半导体及应用发展现状

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蔡蔚, 孙东阳, 周铭浩, 郭庆波, 高晗璎

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Third generation wide bandgap power semiconductors and their applications

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出版时间: 2021-07-28 doi: 10.3981/j.issn.1000-7857.2021.14.004

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近年来，以碳化硅和氮化镓为代表的第三代宽禁带功率半导体迅猛发展，已成为中国功率电子行业的研发和产业化应用的重点。抓住第三代宽禁带功率半导体的战略机遇期，实现半导体材料、器件、封装模块和系统开发的自主可控，对保障工业创新体系的可持续发展至关重要。在分析第三代宽禁带功率半导体重要战略意义的基础上，综述了其材料、器件研发和产业的发展现状，阐述了碳化硅及氮化镓器件在当前环境下的应用成果，剖析了第三代半导体行业存在的关键问题。建议在国家政策的进一步领导之下，发挥行业协会和产业联盟的桥梁和纽带作用，对衬底材料、外延材料、芯片与器件设计和制造工艺等产业链各环节进行整体支撑，引导各环节间实现资源共享、强强联合，上下游互相拉动和促进，形成一个布局合理、结构完整的产业链。

关键词

第三代宽禁带功率半导体 / 碳化硅 / 氮化镓 / 芯片与封装技术 / 半导体应用与市场 / 碳化硅控制器和逆变器

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In recent years, the third generation wide bandgap(WBG) power semiconductors, represented by the silicon carbide and the gallium nitride, have developed rapidly, and have become the focus of the R & D and the industrial applications in the power electronics industry. It is very important for the sustainable development of the industrial innovation system to seize the strategic opportunity period of the third generation WBG power semiconductor, and to realize the independent and controllable development of the semiconductor materials, devices, packaging modules and systems. Based on the analysis of the important strategic significance of the third generation WBG power semiconductor, this paper reviews the development of its materials, device R & D and industry, as well as the application achievements of the silicon carbide (SiC) and gallium nitride (GaN) devices, and the key issues in the third generation WBG semiconductor industry. Based on the analysis of the current situation and the forward-looking prediction, the future development trend and the technology route of the third generation WBG semiconductor in China are analyzed. It is suggested that under the national policy, the industry association and the industry alliance should play roles as a bridge and a link to support all links of the industry chain, such as the substrate materials, the epitaxial materials, the device design and the manufacturing technology, so as to guide all links to realize the resource sharing, the strong alliance, and the mutual pull and promotion between the upstream and the downstream, so as to form an industry chain with a reasonable layout and a complete structure.

Key words

3rd generation wide bandgap power semiconductors / silicon carbide / gallium nitride / chips and package technology / power semiconductor application and market / SiC converter and inverter

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蔡蔚, 孙东阳, 周铭浩, 郭庆波, 高晗璎. 第三代宽禁带功率半导体及应用发展现状. 科技导报, 2021 , 39 (14) : 42 -55 . DOI: 10.3981/j.issn.1000-7857.2021.14.004

CAI Wei, SUN Dongyang, ZHOU Minghao, GUO Qingbo, GAO Hanying. Third generation wide bandgap power semiconductors and their applications[J]. Science & Technology Review, 2021 , 39 (14) : 42 -55 . DOI: 10.3981/j.issn.1000-7857.2021.14.004

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2021年第39卷第14期

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doi: 10.3981/j.issn.1000-7857.2021.14.004

接收时间：2020-10-31
首发时间：2021-09-07
出版时间：2021-07-28

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收稿日期：2020-10-31
修回日期：2020-12-28

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https://castjournals.cast.org.cn/joweb/kjdb/CN/10.3981/j.issn.1000-7857.2021.14.004

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2种不同金属材料的力学参数

科 Family	属数 Number of genus	种数 Number of species	占总种数比例 Percentage of total species (%)	属 Genus	种数 Number of species	占总种数比例 Percentage of total species (%)
鹅膏菌科Amanitaceae	2	11	5.26	鹅膏菌属 Amanita	10	4.78
小菇科 Mycenaceae	2	12	5.74	丝盖伞属 Inocybe	5	2.39
多孔菌科 Polyporaceae	8	14	6.70	蜡蘑属 Laccaria	5	2.39
红菇科 Russulaceae	3	23	11.00	小皮伞属 Marasmius	6	2.87
				小菇属 Mycena	11	5.26
				光柄菇属 Pluteus	5	2.39
				红菇属 Russula	17	8.13
				栓菌属 Trametes	5	2.39

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