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科技导报
| 综述文章 2011, 29(11-09): 76-79
不同掺杂元素对GaN基材料发光性能影响研究进展
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赵君芙，邵桂雪，李天保，梁 建，许并社
作者信息
太原理工大学材料科学与工程学院；新材料界面科学与工程教育部重点实验室，太原 030024
Effects of Various Dopant on Photoluminescence of GaN Based Materials
Affiliations
出版时间: 2011-03-28
doi: 10.3981/j.issn.1000-7857.2011.09.013
文章导航
由于GaN材料本身具有的极大优越性，如大禁带宽度、高临界场强、高热导率、高载流子饱和速率、高异质结界面二维电子气浓度等，决定了GaN基材料及其器件在发光半导体材料领域中的重要地位，而高质量GaN的掺杂制备一直是研究者关注的热点。本文根据近几年国内外对掺杂GaN基材料的研究成果，总结概括了IIA族、过渡族以及稀土族元素对GaN的掺杂，分析讨论了不同掺杂元素对GaN基材料发光性能的影响，并以Mg掺杂GaN为例，对比了各种掺杂技术的优缺点
GaN
/
IIA族金属掺杂
/
过渡族掺杂
/
稀土掺杂
/
光致发光
Gallium Nitride (GaN)-based materials have great advantages, such as direct and large band-gap, high critical field strength and thermal conductivity, high carrier saturation velocity, and high mobility and concentration of two-dimensional electron gas at hetero-junction interface, the advantages determine that the GaN-based materials and devices play an important role in the area of light-emitting semiconductor materials. Thus, the preparation of high quality GaN-based materials doped with various elements has become one of interesting research topics. The recent advanced researches and developments are reviewed and it mainly focuses on doped GaN-based materials, including GaN doped with group IIA elements, the transition elements, and the rare-earth elements; and also the effects of different dopant on the growth and optical properties of GaN-based materials are analyzed. Moreover, the advantages and disadvantages of various doping technologies have been further compared by taking Mg-doped GaN as a typical example
GaN
/
IIA-doped
/
transition-doped
/
rare-earth-doped
/
photoluminescence
赵君芙;邵桂雪;李天保;梁 建;许并社.
不同掺杂元素对GaN基材料发光性能影响研究进展.
科技导报,
2011
, 29
(11-09)
: 76
-79
.
DOI: 10.3981/j.issn.1000-7857.2011.09.013
.
Effects of Various Dopant on Photoluminescence of GaN Based Materials[J].
Science & Technology Review ,
2011
, 29
(11-09)
: 76
-79
.
DOI: 10.3981/j.issn.1000-7857.2011.09.013
2011年第29卷第11-09期
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doi: 10.3981/j.issn.1000-7857.2011.09.013
接收时间：1900-01-01
首发时间：2011-03-28
出版时间：2011-03-28
收稿日期：1900-01-01
修回日期：1900-01-01
https://castjournals.cast.org.cn/joweb/kjdb/CN/10.3981/j.issn.1000-7857.2011.09.013
引用本文
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2种不同金属材料的力学参数
科 属数 种数 占总种数比例 属 种数 占总种数比例 鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78 小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39 多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39 红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87 小菇属 Mycena 11 5.26 光柄菇属 Pluteus 5 2.39 红菇属 Russula 17 8.13 栓菌属 Trametes 5 2.39
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