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科技导报
|研究论文
2006
, 24
(0602) :
12
-18
SiOx(X≤2)基电致发光体系研究进展
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张文彬1 ,张开坚1,2 ,李新军3 ,何明兴1
作者信息
1. 攀枝花钢铁研究院 四川攀枝花
2重庆大学经济与工商管理学院 重庆3. 中国科学院广州能源研究所 广州
通讯作者:
张文彬
Development on SiOx(X≤2)-Based Electroluminescence System
Affiliations
出版时间: 2006-02-10
文章导航
近年来,SiOx(X≤2)基电致发光材料发展迅速。着重讨论了5种具有实用潜力Si基LED包括离子掺杂、Si-nc嵌SiO2、多孔硅、a-Si(C):H以及MOS结构,并对其电致发光机理以及存在的问题如量子效率低、稳定性差进行了分析,认为电致发光原子SiOx(X≤2)中发光中心和界面缺陷处载流子的辐射复合。在激子碰撞和电子空穴复合发光体系中,提高载流子的平衡注入能够显著提高量子效率。在对比SiOx(X≤2)基LED研究的基础上,对下一步发展提出了建议。
氧化硅
/
电致发光
/
掺杂
/
量子效率
/
载流子
SiOx(X≤2)-based electroluminescence material has rapidly developed recently, thus it is necessary to review practical Si-based light emitting devices consisting of ion-doped SiOx, Si-nanocrystal implanted SiO2, porous silicon, hydrogen amorphous Si(C) and MOS structures in this paper. On the basis of these, electroluminescent mechanism has been discussed and at the same time some problems such as low quantum efficiency and poor stability have been clarified that carrier balance injection is must, in the electroluminescent system with impaction of excitons and recombination of carrier, to improve quantum efficiency. Finally development on SiOx(X≤2)-based LED are suggested.
张文彬;张开坚;李新军;何明兴.
SiOx(X≤2)基电致发光体系研究进展.
科技导报,
2006
, 24
(0602)
: 12
-18
.
.
Development on SiOx(X≤2)-Based Electroluminescence System[J].
Science & Technology Review ,
2006
, 24
(0602)
: 12
-18
.
2006年第24卷第0602期
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接收时间:2009-03-20
首发时间:2006-02-10
出版时间:2006-02-10
收稿日期:2009-03-20
修回日期:1900-01-01
https://castjournals.cast.org.cn/joweb/kjdb/CN/1242118128591766395
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2种不同金属材料的力学参数
科 Family 属数 Number of genus 种数 Number of species 占总种数比例 Percentage of total species (%) 属 Genus 种数 Number of species 占总种数比例 Percentage of total species (%) 鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78 小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39 多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39 红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87 小菇属 Mycena 11 5.26 光柄菇属 Pluteus 5 2.39 红菇属 Russula 17 8.13 栓菌属 Trametes 5 2.39
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