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当下,信息的存储速度极限,成为集成电路领域最为关键的基础科学问题之一。目前速度最快的存储器均为易失性存储器,速度为1~30 ns,但断电后数据会丢失。传统闪存不会轻易丢失数据,但存储速度比芯片工作速度落后10万倍以上。

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(图片来源:《Nature》)

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    当下,信息的存储速度极限,成为集成电路领域最为关键的基础科学问题之一。目前速度最快的存储器均为易失性存储器,速度为1~30 ns,但断电后数据会丢失。传统闪存不会轻易丢失数据,但存储速度比芯片工作速度落后10万倍以上。

    . 二维-硅基混合架构闪存芯片刷新存储速率. 科技导报, 2025 , 43 (20) : 11 -11 .
    . Science & Technology Review, 2025 , 43 (20) : 11 -11 .
    当下,信息的存储速度极限,成为集成电路领域最为关键的基础科学问题之一。目前速度最快的存储器均为易失性存储器,速度为1~30 ns,但断电后数据会丢失。传统闪存不会轻易丢失数据,但存储速度比芯片工作速度落后10万倍以上。
    复旦大学周鹏、刘春森团队研发出全球首颗二维—硅基混合架构闪存芯片,解决了存储速率的技术难题。2025年10月8日,相关研究成果发表于《Nature》。
    2025年4月,研究团队曾在《Nature》发表论文称,他们构建了一个全新理论框架,研制出迄今最快的二维闪存器件“破晓”——速度达到400 ps,比传统闪存快100万倍。但要加快新技术孵化,就要将二维超快闪存器件充分融入互补金属氧化物半导体(CMOS)传统半导体生产线。
    二维半导体厚度仅为1~3个原子,如同“薄翼”般脆弱,与百微米级别的硅材料并不兼容。为此,研究团队从本身就具有一定柔性的二维材料入手,通过模块化的集成方案,将二维存储电路与硅基电路分离制造,再通过微米尺度的高密度单片互连技术实现完整集成。
    正是这项核心工艺的创新,实现了在原子尺度上让二维材料和CMOS衬底的紧密贴合,最终实现超过94%的芯片良率。研究团队进一步提出了跨平台系统设计方法论,包含二维-CMOS电路协同设计、二维-CMOS跨平台接口设计等,并将这一系统集成框架命名为“长缨(CY-01)架构”。这一成果将二维超快闪存与成熟CMOS工艺深度融合,攻克了二维信息器件工程化的关键难题。
    研究团队表示,未来将进一步与企业合作,预计在3~5年内将芯片容量从Kb扩展到Mb级别。届时,分级存储架构将被改变,一块存储芯片即可同时实现高读写速率、大容量及数据长期保存,有望将AI服务器部署在个人电脑甚至手机上,进一步推动AI应用和发展。
    (综合《Nature》、复旦大学官网、上观新闻、《解放日报》)

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    2种不同金属材料的力学参数

    Family
    属数
    Number of
    genus
    种数
    Number of
    species
    占总种数比例
    Percentage of
    total species (%)

    Genus
    种数
    Number of
    species
    占总种数比例
    Percentage of total
    species (%)
    鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
    小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
    多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
    红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
    小菇属 Mycena 11 5.26
    光柄菇属 Pluteus 5 2.39
    红菇属 Russula 17 8.13
    栓菌属 Trametes 5 2.39
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